Method of fabricating metal line structure
First Claim
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1. A method of fabricating a metal line comprising the steps of:
- preparing a semiconductor substrate;
depositing a first metal on the semiconductor substrate;
heat-treating the first metal to form a first metal nitride layer;
depositing a second metal on the first metal nitride layer;
heat treating the second metal;
depositing a third metal on the second metal; and
heat treating both the third metal and the second metal to form a metal insulating layer in which the second and the third metals are mixed.
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Abstract
A method of fabricating a metal line includes the steps of preparing a semiconductor substrate, depositing a first metal on the semiconductor substrate, heat-treating the first metal to form a first metal nitride layer, depositing a second metal on the first metal nitride layer, heat treating the second metal, depositing a third metal on the second metal, and heat treating both the third metal and the second metal to form a metal insulating layer in which the second and the third metals are mixed. The method of fabricating increases the area occupied by the metal line in a contact hole, decreases contact resistance, and increases the speed of the device.
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Citations
18 Claims
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1. A method of fabricating a metal line comprising the steps of:
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preparing a semiconductor substrate; depositing a first metal on the semiconductor substrate; heat-treating the first metal to form a first metal nitride layer; depositing a second metal on the first metal nitride layer; heat treating the second metal; depositing a third metal on the second metal; and heat treating both the third metal and the second metal to form a metal insulating layer in which the second and the third metals are mixed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification