High-frequency integrated circuit device having a multilayer structure
First Claim
1. A high-frequency integrated circuit device having a plurality of circuit components including at least one active component for a high-frequency signal and a plurality of passive components, said high-frequency integrated circuit device comprising:
- a multilayer structure comprising a plurality of substrates composed of a dielectric material, wherein said circuit components are disposed on an upper surface of an uppermost substrate, in at least one middle layer corresponding to a region lying between the substrates, on a lower surface of a lowermost substrate, and on a side layer formed by side surfaces of said respective substrates;
a cavity formed by removing a part of the substrate of said multilayer structure including said uppermost substrate; and
a semiconductor chip mounted on a bottom surface of said cavity, said semiconductor chip comprising said active component,said passive components being distributed in said uppermost substrate and said middle layer of said multilayer structure, whereinsaid semiconductor chip mounted in said cavity is sealed with a resin, and said upper surface of said uppermost substrate and an upper surface of the resin are substantially flush with one another.
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Accused Products
Abstract
A multilayer structure composed of a plurality of substrates stacked in layers is provided with a cavity formed by partially removing some of the substrates. A semiconductor chip internally provided with an active component such as an FET is mounted on the bottom face of the cavity. Passive components including a high-frequency matching circuit and a bias circuit are distributed in the uppermost layer, lowermost layer, and middle layer lying between the substrates of the multilayer structure. For example, a chip component partially composing the high-frequency matching circuit is disposed in the uppermost layer, while the bias circuit is disposed in the middle layer. Since only a reduced number of substrates underlie the semiconductor chip internally provided with the active component primarily serving as a heating element, an excellent heat dissipating ability is retained even when each of the substrates of the multilayer structure is composed of a versatile material such as alumina. By utilizing the characteristic, there can be implemented a high-frequency integrated circuit device exhibiting a high degree of integration and usable in mobile communication such as a portable telephone.
134 Citations
19 Claims
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1. A high-frequency integrated circuit device having a plurality of circuit components including at least one active component for a high-frequency signal and a plurality of passive components, said high-frequency integrated circuit device comprising:
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a multilayer structure comprising a plurality of substrates composed of a dielectric material, wherein said circuit components are disposed on an upper surface of an uppermost substrate, in at least one middle layer corresponding to a region lying between the substrates, on a lower surface of a lowermost substrate, and on a side layer formed by side surfaces of said respective substrates; a cavity formed by removing a part of the substrate of said multilayer structure including said uppermost substrate; and a semiconductor chip mounted on a bottom surface of said cavity, said semiconductor chip comprising said active component, said passive components being distributed in said uppermost substrate and said middle layer of said multilayer structure, wherein said semiconductor chip mounted in said cavity is sealed with a resin, and said upper surface of said uppermost substrate and an upper surface of the resin are substantially flush with one another. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 18, 19)
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17. A high-frequency integrated circuit device having a plurality of circuit components including at least one active component for a high-frequency signal and a plurality of passive components, said high-frequency integrated circuit device comprising:
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a multilayer structure comprising a plurality of substrates composed of a dielectric material, wherein said circuit components are disposed on an upper surface of an uppermost substrate, in at least one middle layer corresponding to a region lying between the substrates, on a lower surface of a lowermost substrate, and on a side layer formed by side surfaces of said respective substrates; a cavity formed by removing a part of the lowermost substrate; and a semiconductor chip having said active components and mounted by flip-chip bonding on a bottom surface of said cavity with a front face of the semiconductor chip facing the bottom surface of said cavity, wherein a back face of said semiconductor chip can be brought into contact with equipment on which the high-frequency integrated circuit device is to be mounted, and said circuit components of said active component is distributed in upper surface of said uppermost substrate and said middle layer of said multilayer structure.
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Specification