Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability

• US 5,798,016 A
• Filed: 03/08/1994
• Issued: 08/25/1998
• Est. Priority Date: 03/08/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Zhang, Ying, Haverlag, Marco, Oehrlein, Gottlieb Stefan, Vender, David
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US08/208,158
• Time in Patent Office: 1,631 Days
• Field of Search: 156/646.1, 156/643.1, 156/345, 216/67, 134/1.1
• US Class Current: 156/345.37
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction

Abstract

The present invention relates to a method and apparatus for etching semiconductor devices where the undesirable deposition of films on the internal surfaces of the apparatus are prevented during the etching process. The system for etching devices provides an etching chamber having a deposition resistant surface, a holder for holding the device to be etched, and a heater for heating the deposition resistant surface to a temperature between 100° C. to 600° C. to impede the formation of films on the walls of the chamber. The etching system may further include the deposition resistant surface surrounding the holder while not interfering with the plasma used to etch the substrate.

Claims

1. An apparatus for etching a device having a flow of a plasma and preventing the undesirable deposition of a film comprising:

a source of fluorocarbon gas;

an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber;

means for heating said surface to and maintaining said surface at a temperature between 290°

C. to 310°

C. to impede the formation of a deposition film on said surface; and

means for generating a plasma from the source fluorocarbon gas.

2. The apparatus of claim 1, wherein said surface does not interfere with the flow of the plasma.

3. The apparatus of claim 1, wherein said surface is heated to a temperature of 300°

C.

4. The apparatus of claim 1, wherein said surface comprises the walls of the etching chamber.

5. The apparatus of claim 1, wherein said surface comprises a liner disposed within the etching chamber.

6. The apparatus of claim 1, wherein said surface is disposed on the walls of the etching chamber.

7. The apparatus of claim 1, wherein said surface is coated with a material to reduce erosion of said surface in the flow of the plasma.

8. The apparatus of claim 7, wherein said surface is coated with a material selected from the group consisting of Al₂ O₃, Y₂ O₃ and SC₂ O₃.

9. The apparatus of claim 1, wherein said surface comprises a material selected from the group consisting of metals and dielectrics.

10. The apparatus of claim 9, wherein said surface comprises a material selected from the group consisting of stainless steel, ceramic, quartz and aluminum.

11. The apparatus of claim 1, wherein the etching chamber is one of a dry etching chamber, which uses a fluorocarbon gas mixture, and a reactive ion etching chamber.

14. The apparatus of claim 1 wherein an oxide is formed on the substrate and the system further comprises means for etching the oxide using the plasma generated from the fluorocarbon gas.

15. The apparatus of claim 1 further comprising means for generating the plasma using a gas selected from the group consisting of CHF₃ (100%), CHF₃ /H₂ (30%) and CHF₃ /H₂ (50%).

17. The apparatus of claim 4, wherein said surface is coated with Sc₂ O₃.

18. The apparatus of claim 4, wherein said surface is coated with Al₂ O₃.

19. The apparatus of claim 5, wherein said liner is coated with a material to reduce erosion of said liner in said plasma.

21. In a apparatus of claim 19, wherein said liner is coated with Sc₂ O₃.

22. The apparatus of claim 19, wherein said liner is coated with Al₂ O₃.

24. The apparatus of claim 8, wherein said surface is coated with Sc₂ O₃.

25. The apparatus of claim 8, wherein said surface is coated with Al₂ O₃.

12. In a system for etching a device having a flow of a plasma, an apparatus for preventing the undesirable deposition of a film comprising:

an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber;

means for heating said surface to a temperature between 200°

C. to 325°

C. to impede the formation of a deposition film on said surface; and

a plasma source having a resonance frequency biasing.

13. The apparatus of claim 12, wherein the plasma source is one of an electron resonance plasma source and a resonance frequency biasing plasma source.

16. In a system having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising:

an etching chamber having a wall defining the etching chamber, said wall having a surface coated with Y₂ O₃ ; and

means for heating said surface to a temperature between 200°

C. to 325°

C. to impede the formation of a deposition film on said surface.

20. In a system having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising:

an etching chamber having one of a liner disposed in said etching chamber, said liner having a surface coated with Y₂ O₃ to reduce erosion of said liner in said plasma; and

means for heating said surface to a temperature between 200°

C. to 325°

C. to impede the formation of a deposition film on said surface.

23. In a system for having a flow of a plasma for etching a device, an apparatus for preventing the undesirable deposition of a film comprising:

an etching chamber having one of a surface defining the etching chamber and a surface disposed in said etching chamber, where said surface is coated with Y₂ O₃ to reduce erosion of said surface in the flow of the plasma; and

means for heating said surface to a temperature between 200°

C. to 325°

C. to impede the formation of a deposition film on said surface.