Light-emitting semiconductor device and method for manufacturing the same

• US 5,798,536 A
• Filed: 01/17/1997
• Issued: 08/25/1998
• Est. Priority Date: 01/25/1996
• Status: Expired due to Fees

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Tsutsui, Tsuyoshi
• Primary Examiner(s): MEIER, STEPHEN D
• Application Number:
  US08/785,037
• Time in Patent Office: 585 Days
• Field of Search: 257/99, 257/98
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01056 Barium [Ba]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/40 : Materials therefor
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Desclosed is a light-emitting semiconductor device has a light-emitting chip. The light-emitting chip has an insulator substrate and a semiconductor layer formed overlying the substrate. First and second conductivity type regions are formed in the semiconductor layer. The second conductivity type region has an exposed surface formed by removing part of the semiconductor layer. A top electrode is formed on a surface of the first conductivity type region. An end electrode is formed on an exposed surface of the second conductivity type region. A first electrode lead is mounted with the light-emitting chip and has a projecting portion extending along an adjacent surface of the light-emitting chip. A second electrode lead extends parallel to the first electrode lead. A conductor wire is electrically connected between the second electrode lead and the top electrode. The end electrode and the projecting portion are electrically connected through an electrically-conductive resin.

Claims

1. A light-emitting semiconductor device comprising:

a light-emitting chip having an insulator substrate and semiconductor layers made of gallium-nitride base compound semiconductor overlying said substrate, said semiconductor layers having first and second conductivity type layers, and said second conductivity type layer having an exposed surface formed by removing part of said semiconductor layers;

a top electrode formed on a surface of said first conductivity type layer;

an end electrode formed on an exposed surface of said second conductivity type layer at an end portion thereof;

a first electrode lead mounted with said light-emitting chip;

a second electrode lead extending near said first electrode lead;

a conductor wire electrically connected between said second electrode lead and said top electrode; and

wherein said end electrode and said first electrode lead are electrically connected through an electrically-conductive paste material.

2. The light-emitting semiconductor device of claim 1, wherein said first electrode lead having a base portion mounted with said light-emitting chip and having a projecting portion extending from said base portion and extending along an adjacent surface of said light-emitting chip, and said projecting portion being formed such that a top face thereof is substantially in flush with that of said end electrode of said light-emitting chip.

3. The light-emitting semiconductor device of claim 1, wherein said first electrode lead having a base portion mounted with said light-emitting chip and having a projecting portion extending from said base portion and extending along an adjacent surface of said light-emitting chip, and said projecting portion being formed such that a top face thereof is higher than that of said end electrode of said light-emitting chip so that electrical connection is done between said end electrode and a lateral surface of said projecting portion.

4. The light-emitting semiconductor device of claim 1, wherein said substrate of said light-emitting chip is formed of a material for transmission of light emitted from said semiconductor layer and said light-emitting chip has a light-reflecting film formed on a surface being mounted to said first electrode lead.

5. The light-emitting semiconductor device of claim 4, wherein said light-reflecting film is a metal oxide film or a ceramic film formed on a backside of said substrate.

6. The light-emitting semiconductor device of claim 1, wherein said substrate is formed of sapphire.

7. The light-emitting semiconductor device of claim 1, wherein said electrically-conductive paste material is a cured Ag-particle contained paste material.