Enhancement-depletion logic based on Ge mosfets
First Claim
1. A germanium field effect device, having a source and a drain, comprising:
- a germanium channel layer;
a gate layer, the gate layer being an aluminum oxide layer, formed over the germanium channel layer from a deposited aluminum arsenide layer;
an arsenic controlling layer in contact with the gate layer for controlling excess arsenic atoms in the gate layer; and
electrodes respectively formed over the source, the drain and the gate layer.
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Abstract
The present invention discloses a method of forming an oxide layer on a layer of germanium including the steps of depositing a layer of aluminum arsenide on the layer of germanium, of exposing the layer of aluminum arsenide to an oxidizing gas mixture so that the aluminum arsenide is oxidized to aluminum oxide, and of controlling excess arsenic released in the aluminum oxide by the exposing step, so as to ensure enhanced electrical properties in the aluminum oxide. The method is used to provide an insulating gate layer for a Ge field effect transistor by forming an oxide layer on Ge and controlling excess arsenic so as to maintain high resistivity in the oxide layer and to avoid the formation of interface surface states which degrade transistor performance. The method is also used to provide complementary metal-insulator-semiconductor logic devices based on the germanium field effect transistor.
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Citations
14 Claims
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1. A germanium field effect device, having a source and a drain, comprising:
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a germanium channel layer; a gate layer, the gate layer being an aluminum oxide layer, formed over the germanium channel layer from a deposited aluminum arsenide layer; an arsenic controlling layer in contact with the gate layer for controlling excess arsenic atoms in the gate layer; and electrodes respectively formed over the source, the drain and the gate layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A germanium field effect device having a source and a drain, comprising:
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a germanium layer; a gate layer, the gate layer being formed from hydrogenated aluminum oxide, formed over the germanium layer from a deposited aluminum arsenide layer; and electrodes respectively formed over the source, the drain and the hydrogenated gate aluminum oxide layer.
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9. A germanium complementary metal-insulator-semiconductor device, comprising:
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a substrate; a first transistor on the substrate, the first transistor comprising a first source, a first drain, an n-type germanium channel layer, the n-type germanium channel layer being in an intermediate conducting relationship with the first and second source, a first gate layer, the first gate layer being an aluminum oxide layer, the first gate layer being formed over the n-type germanium channel layer, and a first arsenic controlling layer in contact with the first gate layer for controlling excess arsenic atoms in the first gate layer; and a second transistor on the substrate, the second transistor comprising a second source, a second drain, a p-type germanium channel layer, the p-type germanium channel layer being in an intermediate conducting relationship with the second source and the second gate, a second gate layer, the second gate layer being an aluminum oxide layer, the second gate layer being formed over the p-type germanium channel layer, and a second arsenic controlling layer in contact with the second gate layer for controlling excess arsenic atoms in the second gate layer. - View Dependent Claims (10, 11, 12, 13)
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14. A germanium complementary metal-insulator-semiconductor device, comprising:
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a substrate; a first transistor on the substrate, the first transistor comprising a first source, a first drain, an n-type germanium channel layer, the n-type germanium channel layer being in an intermediate conducting relationship with the first source and the first drain, a first gate layer, the first gate layer being a hydrogenated aluminum oxide layer formed over the n-type germanium channel layer; and a second transistor on the substrate, the second transistor comprising a second source, a second drain a p-type germanium channel layer, the p-type germanium channel layer being in an intermediate conducting relationship with the second source and the second drain, a second gate layer, the second gate layer being a hydrogenated aluminum oxide layer formed over the p-type germanium channel layer.
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Specification