Plasma source for HDP-CVD chamber
First Claim
1. A chamber for processing a substrate, comprising:
- a) a chamber body comprising a top and sidewalls defining a plasma cavity and a gas inlet centrally located in the top of the chamber; and
b) a top antenna mounted in the top of the chamber body, the top antenna comprising a central coil turn defining a central passage in the top antenna, an outer coil turn concentrically aligned with the central coil turn, and a plurality of inductors extending between the central coil turn and the outer coil turn.
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Accused Products
Abstract
A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.
50 Citations
9 Claims
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1. A chamber for processing a substrate, comprising:
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a) a chamber body comprising a top and sidewalls defining a plasma cavity and a gas inlet centrally located in the top of the chamber; and b) a top antenna mounted in the top of the chamber body, the top antenna comprising a central coil turn defining a central passage in the top antenna, an outer coil turn concentrically aligned with the central coil turn, and a plurality of inductors extending between the central coil turn and the outer coil turn. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A chamber for processing a substrate, comprising:
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a) a chamber body comprising a top and sidewalls defining a plasma cavity and, a gas inlet centrally located in the top of the chamber; b) a top antenna mounted in the top of the chamber body, the top antenna comprising a central coil turn defining a central passage in the top antenna, an outer coil turn concentrically aligned with the central coil turn, and a plurality of inductors extending between the central coil turn and the outer coil turn; c) a side antenna configured and positioned relative to the plasma cavity to produce a hollow-center plasma density profile above a substrate during operation; d) an RF power generator; and e) an RF power splitter connecting the RF generator to the top and the side antennas. - View Dependent Claims (8, 9)
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Specification