Method of manufacturing planar optical waveguides

• US 5,800,860 A
• Filed: 06/28/1995
• Issued: 09/01/1998
• Est. Priority Date: 06/28/1995
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Kilian, Arnd Hermann, Lee, Hyung Jong, MacChesney, John Burnette
• Primary Examiner(s): BELL, JANYCE A
• Application Number:
  US08/496,268
• Time in Patent Office: 1,161 Days
• Field of Search: 427/165, 427/419.7, 427/163.2, 427/379, 427/377, 427/269, 427/255, 427/261, 427/223
• US Class Current: 427/163.2
• CPC Class Codes: C03B 19/1453 Thermal after-treatment of the shaped article, e.g. dehydrating, consolidating, sintering
• CPC Class Codes: C03B 2201/10 doped with boron C03B2201/14 takes precedence
• CPC Class Codes: C03C 17/02 with glass C03C17/34, C03C17/44 take precedence
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 2006/12064 Zinc sulfide (ZnS)
• CPC Class Codes: G02B 2006/12116 Polariser; Birefringent
• CPC Class Codes: G02B 6/132 by deposition of thin films

Abstract

A novel planar waveguide structure has been constructed by sintering substantially pure SiO₂ layers in a He₂ /BCl₃ atmosphere. This results in the generation of a liquid phase of substantially lower viscosity than that of the deposited silica by itself. Since viscous sintering is enhanced by the presence of this liquid, consolidation occurs at lower temperature, e.g. 1000°-1100° C., than those used in the prior art, e.g. 1350°-1500° C. Much of the B₂ O₃ remains unreacted with the silica particles it helps to sinter, acting like a flux to bring about consolidation. This remaining B₂ O₃ is removed at the conclusion of the consolidation procedure by steam treatment at temperatures of 900°-1100° C. Some boron is incorporated into the silica layer, changing its CTE without substantially increasing its index. Thus, this method improves both structure and processing of planar waveguides by reducing the processing temperature and producing a glass which does not bow the substrate and essentially eliminates birefringence resulting in polarization dependent losses. This greatly benefits sophisticated circuits such as those intended for wavelength diversion multiplexing and allows narrow and precisely positional pass bands.

Claims

1. The method of manufacturing planar optical waveguides, which comprises

forming upon a substrate selected from a group consisting of silicon and silica a lower cladding layer comprising silica having a first index of refraction,

forming upon the lower cladding layer at least one waveguiding ridge comprising silica having a second index of refraction which is higher than said first index of refraction,

forming on said at least one waveguide ridge and on exposed regions of the lower cladding layer an upper cladding layer comprising particles of silica having an index of refraction which is lower than said second index of refraction, said upper cladding layer is formed by depositing a layer of soot particles comprising silica and sintering the soot particles in a helium-containing atmosphere into a glassy layer,

wherein, said sintering is conducted by heating the soot layer in a helium atmosphere containing a gaseous additive selected from the group consisting of BCl₃ and BF₃ at temperatures of from 800°

to 900°

C., sintering the heated soot layer at a temperature ranging from 1000°

to 1100°

C. in absence of said gaseous additive, annealing the sintered structure in a steam-and-oxygen atmosphere at a temperature of from 1000°

to 1150°

C., and allowing the annealed layer to cool to room temperature.

2. The method of claim 1, in which

said sintering is conducted in a furnace which is purged at a low temperature with a stream of helium,

said gaseous additive is added into the helium stream toward the end of the helium purge and the furnace temperature is raised over a period of from 1.5 to 2.5 hours to the heating temperature of from 800°

to 900°

C.,

15-20 minutes after reaching said heating temperature, addition of the gaseous additive is discontinued and the furnace temperature is raised over a period of from 1.5 to 2.5 hours to a sintering temperature of from 1000°

to 1100°

C., and maintained at said sintering temperature for a period of about one hour,

the sintered structure is then annealed in a steam-and-oxygen atmosphere at a temperature of from 1000°

to 1150°

C. for a period of from 5 to 7 hours, and the sintered structure is allowed to cool to the room temperature.

3. The method of claim 1, in which said heating temperature is 800°

C.

4. The method of claim 1, in which said heating temperature is raised over a period of 2 hours.

5. The method of claim 1 in which said flow of helium through the furnace is maintained at 300 cc/min.

6. The method of claim 1 in which the flow of BCl₃ is maintained at from 3.5 to 5 cc/min.

7. The method of claim 1 in which the furnace temperature is raised to the sintering temperature over a period of 2 hours.

8. The method of claim 1 in which the flow of BF₃ is maintained at 15 cc/min.

9. The method of claim 8, in which the heating temperature is 900°

C.

10. The method of producing a silica cladding layer on a structure comprising a substrate selected from the group consisting of silicon and silica, which comprises

forming on said substrate a silica soot layer by flame hydrolysis deposition,

placing the structure into a furnace,

purging the furnace with helium at a low temperature,

adding an additive selected from the group consisting of BCl₃ and BF₃ into the helium stream,

raising the temperature over a period of 1.5 to 2.5 hours to a heating temperature of 900°

C. or less,

sintering the heated soot layer in absence of said gaseous additive by raising the temperature to from 1000°

to 1100°

C. over a period of from 1.5 to 2.5 hours and maintaining the sintering temperature over a period of about one hour,

annealing the sintered structure in a steam-and-oxygen atmosphere at a temperature ranging from 1000°

to 1150°

C. for a period of from 5 to 7 hours, and

allowing the annealed structure to cool to the room temperature.

11. The method of producing a silica cladding layer of claim 10, in which

said sintering is conducted in a furnace which is purged at a low temperature with a stream of helium,

said gaseous additive is added into the helium stream toward the end of the helium purge and the furnace temperature is raised over a period of from 1.5 to 2.5 hours to said temperature of from 800°

to 900°

C.,

15-20 minutes after reaching said heating temperature, addition of the gaseous additive is discontinued and the furnace temperature is raised over a period of from 1.5 to 2.5 hours to a sintering temperature of from 1000°

to 1100°

C., and maintained at said sintering temperature for a period of about one hour,

the sintered structure is then annealed in a stream-and-oxygen atmosphere at a temperature of from 1000°

to 1150°

C. for a period of from 5 to 7 hours, and

the sintered structure is allowed to cool to the room temperature.

12. The method of producing a silica cladding layer of claim 10, in which said heating temperature is 800°

C.

13. The method of producing a silica cladding layer of claim 10, in which said heating temperature is raised over a period of 2 hours.

14. The method of producing a silica cladding layer of claim 10, in which said flow of helium through the furnace is maintained at 300 cc/min.

15. The method of producing a silica cladding layer of claim 10, in which the flow of BCl₃ is maintained at from 3.5 to 5 cc/min.

16. The method of producing a silica cladding layer of claim 10, in which the furnace temperature is raised to the sintering temperature over a period of 2 hours.

17. The method of producing a silica cladding layer of claim 10, in which the flow of BF₃ is maintained at 15 cc/min.

18. The method of producing a silica cladding layer of claim 17, in which the heating temperature is 900°

C.