Method of fabricating thin film piezoelectric device
First Claim
1. A method of fabricating a thin film piezoelectric device comprising:
- preparing a semiconductor substrate having a surface;
forming an etch stopping layer having an etching rate on the surface of the semiconductor substrate;
forming a first semiconductor layer having an etching rate higher than the etching rate of the etch stopping layer on the etch stopping layer;
forming a first electrode on a region of the first semiconductor layer;
forming a piezoelectric film on the first electrode;
forming a second electrode on the piezoelectric film; and
etching a portion of the first semiconductor layer opposite where the first electrode, the piezoelectric film, and the second electrode overlap, from the surface of the first semiconductor layer and selectively with respect to the etch stopping layer, thereby forming a cavity in the first semiconductor layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating a thin film piezoelectric device includes preparing a semiconductor substrate having a surface; forming an etch stopping layer having an etching rate on the surface of the semiconductor substrate; forming a first semiconductor layer having an etching rate higher than the etching rate of the etch stopping layer on the etch stopping layer; forming a first electrode on a region of the first semiconductor layer; forming a piezoelectric film on the first electrode; forming a second electrode on the piezoelectric film; and etching a portion of the first semiconductor layer where the first electrode, the piezoelectric film, and the second electrode overlap, from the surface of the first semiconductor layer, selectively with respect to the etch stopping layer, thereby forming a cavity in the first semiconductor layer. Even when a compound semiconductor is employed as the substrate, the etching forming a cavity is stopped at the etch stopping layer in the direction perpendicular to the surface of the first semiconductor layer so that a cavity having a uniform depth is produced with high controllability.
40 Citations
2 Claims
-
1. A method of fabricating a thin film piezoelectric device comprising:
-
preparing a semiconductor substrate having a surface; forming an etch stopping layer having an etching rate on the surface of the semiconductor substrate; forming a first semiconductor layer having an etching rate higher than the etching rate of the etch stopping layer on the etch stopping layer; forming a first electrode on a region of the first semiconductor layer; forming a piezoelectric film on the first electrode; forming a second electrode on the piezoelectric film; and etching a portion of the first semiconductor layer opposite where the first electrode, the piezoelectric film, and the second electrode overlap, from the surface of the first semiconductor layer and selectively with respect to the etch stopping layer, thereby forming a cavity in the first semiconductor layer. - View Dependent Claims (2)
-
Specification