Electroless copper plating method for forming integrated circuit structures

• US 5,801,100 A
• Filed: 03/07/1997
• Issued: 09/01/1998
• Est. Priority Date: 03/07/1997
• Status: Expired due to Term

• Current Assignee: Transpacific IP Group Limited
• Original Assignee: Industrial Technology Research Institute
• Inventors: Lee, Chwan-Ying, Huang, Tzuen-Hsi
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US08/813,719
• Time in Patent Office: 543 Days
• Field of Search: 438/678, 438/687, 427/98, 427/445.1, 427/305
• US Class Current: 438/678
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76852 the layer also covering the sidewalls of the conductive structure
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H05K 1/165 incorporating printed inductors
• CPC Class Codes: H05K 3/244 Finish plating of conductors, especially of copper conductors, e.g. for pads or lands selective plating methods H05K3/243; finish plating of conductors made by printing techniques H05K3/246; solder as finish H05K3/3457, e.g. by plating H05K3/3473
• CPC Class Codes: H05K 3/4644 by building the multilayer layer by layer, i.e. build-up multilayer circuits making via holes in the insulating layers H05K3/0011; special circuit boards as base or core whereon the multilayer is built H05K3/4602
• CPC Class Codes: Y10S 257/904 with passive components,, e.g. polysilicon resistors

Abstract

A method for fabricating a copper containing integrated circuit structure within an integrated circuit, and the copper containing integrated circuit structure formed through the method. There is first provided a substrate layer. There is then formed through a first electroless plating method a nickel containing conductor layer over the substrate layer. There is then activated the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer. Finally, there is then formed through a second electroless plating method a copper containing conductor layer upon the nickel containing conductor layer. Optionally, there may be formed a polysilicon layer over the substrate prior to forming the nickel containing conductor layer over the substrate, where the nickel containing conductor layer is formed upon the polysilicon layer. Optionally, there may also be formed a second nickel containing conductor layer upon the copper containing conductor layer. The method is useful in forming copper containing integrated circuit inductor structures within integrated circuits.

Claims

1. A method for fabricating a copper containing integrated structure within an integrated circuit comprising:

providing a substrate layer;

forming a nickel containing conductor layer over the substrate layer; and

forming upon the nickel containing conductor layer a copper containing conductor layer, where the copper containing conductor layer is employed within a copper containing integrated circuit inductor structure within the integrated circuit.

2. The method of claim 1 wherein the substrate layer is chosen from the group of substrate layers consisting of conductor substrate layers, semiconductor substrate layers and insulator substrate layers.

3. The method of claim 1 wherein the nickel containing conductor layer has a thickness of from about 1000 to about 2000 angstroms.

4. The method of claim 1 wherein the nickel containing conductor layer has a phosphorus content of from about 3.2 to about 4.8 weight percent.

5. The method of claim 1 wherein the nickel containing conductor layer serves as a barrier layer to interdiffusion of the copper containing conductor layer with the substrate layer.

18. The method of claim 1 wherein:

the nickel containing conductor layer is formed over the substrate through a first electroless plating method;

the nickel containing conductor layer is activated to form an activated nickel surface of the nickel containing conductor layer prior to forming the copper containing conductor layer upon the nickel containing conductor layer; and

the copper containing conductor layer is formed upon the nickel containing conductor layer through a second electroless plating method.

6. A method for fabricating a copper containing integrated circuit structure within an integrated circuit comprising:

providing a substrate layer;

forming over the substrate layer a polysilicon layer;

forming through a first electroless plating method a nickel containing conductor layer upon the polysilicon layer;

activating the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer; and

forming through a second electroless plating method a copper containing conductor layer upon the nickel conductor layer.

7. The method of claim 6 wherein the copper containing integrated circuit structure is a copper containing integrated circuit inductor structure.

8. The method of claim 7 wherein the substrate layer is chosen from the group of substrate layers consisting of silicon substrate layers and silicon oxide substrate layers.

9. The method of claim 6 wherein:

the nickel containing conductor layer is from about 1000 to about 2000 angstroms thick; and

the nickel containing conductor layer has a phosphorus content of from about 3.2 to about 4.8 weight percent.

10. The method of claim 9 wherein the first electroless plating method employs an electroless nickel plating solution comprising:

about 25 to about 35 grams per liter nickel sulfate;

about 5 to about 10 grams per liter sodium hypophosphite;

about 64 to about 80 grams per liter sodium citrate; and

about 40 to about 50 grams per liter ammonium chloride.

11. The method of claim 6 wherein the nickel containing conductor layer is activated through contact with an aqueous activator solution comprising:

about 0.1 to about 0.2 grams per liter palladium salt;

about 450 to about 550 milliliters per liter glacial acetic acid; and

about 200 to about 300 milliliters per liter 49 percent hydrofluoric acid.

12. The method of claim 6 wherein the second electroless plating method employs a nickel mediator ion.

13. The method of claim 12 wherein:

the copper containing conductor layer has a thickness of from about 8000 to about 12000 angstroms;

the copper containing conductor layer has a phosphorus content of from about 2 to about 3 weight percent; and

the copper containing conductor layer has a nickel content of from about 2 to about 3 weight percent.

14. The method of claim 13 wherein the second electroless plating method employs an aqueous plating solution comprising:

about 7 to about 10 grams per liter copper sulfate;

about 15 to about 20 grams per liter sodium citrate;

about 7.5 to about 11.5 grams per liter sodium hypophosphite;

about 7.5 to about 12.5 grams per liter boric acid; and

about 0.35 to about 0.75 grams per liter nickel sulfate.

15. The method of claim 6 wherein the polysilicon layer has a thickness of from about 1000 to about 3000 angstroms.

16. The method of claim 15 wherein:

the polysilicon layer functions as an adhesion promoter layer; and

the nickel containing conductor layer functions as a barrier layer.

17. The method of claim 6 further comprising forming upon the copper containing conductor layer a second nickel containing conductor layer.