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Inverted field-effect device with polycrystalline silicon/germanium channel

  • US 5,801,396 A
  • Filed: 06/07/1995
  • Issued: 09/01/1998
  • Est. Priority Date: 01/18/1989
  • Status: Expired due to Term
First Claim
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1. An integrated circuit, comprising:

  • a first field-effect transistor, havingsource and drain diffusions of a first conductivity type located in and defining a channel region therebetween in a monocrystalline semiconductor body, and a gate electrode, formed in a first thin-film layer of polycrystalline semiconducting material, which is capacitively coupled to said channel region through a first gate dielectric layer;

    a second field-effect transistor, having source and drain diffusions of a second conductivity type located in and defining a channel region therebetween in a second thin-film layer of polycrystalline semiconducting material, and a gate electrode, formed in said monocrystalline body, which is capacitively coupled to said channel region through a second gate dielectric layer;

    wherein said first and second gate dielectric layers have different thicknesses at all locations.

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