Electronic system using multi-layer tab tape semiconductor device having distinct signal, power and ground planes

• US 5,801,432 A
• Filed: 04/16/1996
• Issued: 09/01/1998
• Est. Priority Date: 06/04/1992
• Status: Expired due to Term

• Current Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Raab, Kurt Raymond, McCormick, John, Rostoker, Michael D.
• Primary Examiner(s): WHITEHEAD JR, CARL W
• Application Number:
  US08/632,962
• Time in Patent Office: 868 Days
• Field of Search: 257/666, 257/668, 257/670, 257/676, 257/734, 257/735, 257/736, 257/737, 257/738, 257/774
• US Class Current: 257/666
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/4899 Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/3011 : Impedance

Abstract

Electronic systems using separate and distinct conductive layers for power and ground are insulated from one another and a patterned signal conductive layer to form a flexible substrate for mounting a semiconductor die in a semiconductor device assembly of the system. TAB technology is utilized to produce an assembly that has superior electrical characteristics because power and ground is conducted on separate low impedance conductive layers. The power and ground leads connecting the semiconductor die and external circuits are selected from the signal trace layer, cut bent downward and attached by bonding to the respective power or ground layer. A tool is disclosed for cutting the selected leads. The present invention further provides a system utilizing a wafer probe card which includes a multi-layer, relatively flexible tape-like substrate having a first conductive layer patterned to have a number of probe leads thereon. The first conductive layer of probe leads are formed on an insulating layer having an inner peripheral edge defining a central opening in which an IC die is placed for testing. The insulating layer further includes inner and outer peripheral openings therethrough and a second conductive layer is provided on a side of the insulating layer opposite the probe leads. Inner and outer edge portions of the second conductive layer are exposed through the inner and outer peripheral openings, respectively. Selected probe leads are cut at an edge of the inner and outer peripheral openings in the insulating layer, bent past the insulating layer and bonded to the exposed inner and outer edge portions of the second conductive layer.

Claims

1. An electronic system, comprising:

at least one semiconductor device assembly comprising;

a first insulating layer having first and second substantially parallel surfaces, a first central opening adapted to receive a semiconductor die, a first outside perimeter, and at least one first intermediate opening between the first central opening and the first outside perimeter;

a first conductive layer having a plurality of conductive traces disposed on the first surface of said first insulating layer, across the at least one first intermediate opening, extending within the first central opening and extending from the first outside perimeter of said first insulating layer,

wherein each of the plurality of conductive traces of said first conductive layer has a proximate end in the first central opening and a distal end extending from the first outside perimeter of said first insulating layer;

a second conductive layer disposed on the second surface of said first insulating layer and extending within the first central opening of said first insulating layer, said second conductive layer having portions covering the at least one first intermediate opening of said first insulating layer and having a plurality of second intermediate openings between the portions and substantially aligned with the at least one first intermediate opening;

a second insulating layer having third and fourth substantially parallel surfaces, a second central opening adapted to receive the semiconductor die and smaller than the first central opening of said first insulating layer, a plurality of third intermediate openings substantially aligned with the plurality of second intermediate openings of said second conductive layer, and a second outside perimeter, said second insulating layer disposed on an opposite side of said second conductive layer from the first insulating layer;

a third conductive layer disposed on a side of said second insulating layer opposite the second conductive layer, across the plurality of third intermediate openings and extending within the second central opening of said second insulating layer;

a semiconductor die having a plurality of contact pads connected to electronic circuits within said die, the proximate ends of the plurality of conductive traces are connected to the contact pads of the semiconductor die within the first central opening of said first insulating layer;

selected ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the first central opening and are connected to said second conductive layer;

said selected ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the at least one first intermediate opening and are connected to said second conductive layer;

selected other ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the second central opening and are connected to said third conductive layer; and

said selected other ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the plurality of third intermediate openings and are connected to said third conductive layer,

wherein said second and third conductive layers connect together all of the proximate and distal ends of said selected ones and said selected other ones, respectively, of the plurality of conductive traces of said first conductive layer.

2. An electronic system, comprising:

at least one semiconductor device assembly comprising;

a first insulating layer having first and second substantially parallel surfaces, a first central opening adapted to receive a semiconductor die, a first outside perimeter, at least one first intermediate opening biased toward the first outside perimeter, and at least one second intermediate opening biased toward the first central opening;

a first conductive layer having a plurality of conductive traces disposed on the first surface of said first insulating layer, across the at least one first and second intermediate openings, extending within the first central opening and extending from the first outside perimeter of said first insulating layer,

wherein each of the plurality of conductive traces of said first conductive layer has a proximate end in the first central opening and a distal end extending from the first outside perimeter of said first insulating layer;

a second conductive layer disposed on the second surface of said first insulating layer, said second conductive layer covering the at least one second intermediate opening and having portions covering the at least one first intermediate opening of said first insulating layer, and said second conductive layer having a plurality of third intermediate openings between the portions and substantially aligned with the at least one first intermediate opening;

a second insulating layer having third and fourth substantially parallel surfaces, a second central opening adapted to receive the semiconductor die and substantially aligned with the first central opening of said first insulating layer, a plurality of fourth intermediate openings substantially aligned with the plurality of third intermediate openings of said second conductive layer, and a second outside perimeter substantially aligned with the first outside perimeter, said second insulating layer disposed on an opposite side of said second conductive layer from the first insulating layer;

a third conductive layer disposed on a side of said second insulating layer opposite the second conductive layer, across the plurality of fourth intermediate openings and extending within the second central opening of said second insulating layer;

a semiconductor die having a plurality of contact pads connected to electronic circuits within said die, the proximate ends of the plurality of conductive traces are connected to the contact pads of the semiconductor die within the first central opening of said first insulating layer;

selected ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the at least one second intermediate opening and are connected to said second conductive layer;

said selected ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the at least one first intermediate opening and are connected to said second conductive layer;

selected other ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the second central opening and are connected to said third conductive layer; and

said selected other ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the plurality of fourth intermediate openings and are connected to said third conductive layer,

wherein said second and third conductive layers connect together all of the proximate and distal ends of said selected ones and said selected other ones, respectively, of the plurality of conductive traces of said first conductive layer.

3. The system of claim 2, wherein the selected ones and selected other ones of the plurality of conductive traces are connected to and terminate at unselected traces so that there are no selected ones and selected other ones of the plurality of conductive traces on the first surface of said first insulating layer substantially between the first central opening and the at least one intermediate opening.

4. The system of claim 2, further comprising:

the selected ones and selected other ones of the plurality of conductive traces are cut and both cut ends are urged into the at least one intermediate opening; and

encapsulant is placed into the at least one intermediate opening and substantially covers both cut ends.

5. The system of claim 2, wherein the at least one first intermediate opening is an elongated slot having a length greater than its width.

6. The system of claim 2, wherein the at least one second intermediate opening is an elongated slot having a length greater than its width.

18. The system of claim 2, wherein the electronic system is a single chip module.

19. The system of claim 2, wherein the electronic system is a multi-chip module having at least one semiconductor device.

20. The system of claim 2, wherein the electronic system is a board level product having a plurality of semiconductor devices on at least one printed wiring board.

21. The system of claim 2, wherein the electronic system is a box level system having a plurality of semiconductor devices on at least one printed wiring board mounted into a box with a power source.

22. The system of claim 2, wherein the electronic system is a computer system.

23. The system of claim 2, wherein the electronic system is an information and entertainment transmission system.

24. The system of claim 2, wherein the electronic system is an entertainment system.

25. The system of claim 2, wherein the electronic system is a security and surveillance system.

26. The system of claim 2, wherein the electronic system is an information, data acquisition and control system.

27. The system of claim 2, wherein the electronic system is utilized in a transportation system.

7. An electronic system, comprising:

at least one semiconductor device assembly comprising;

a first insulating layer having first and second substantially parallel surfaces, a first central opening adapted to receive a semiconductor die, a first outside perimeter, at least one first intermediate opening biased toward the first outside perimeter, and at least one second intermediate opening biased toward the first central opening;

a first conductive layer having a plurality of conductive traces disposed on the first surface of said first insulating layer, across the at least one first and second intermediate openings, extending within the first central opening and extending from the first outside perimeter of said first insulating layer,

wherein each of the plurality of conductive traces of said first conductive layer has a proximate end in the first central opening and a distal end extending from the first outside perimeter of said first insulating layer;

a second conductive layer disposed on the second surface of said first insulating layer, said second conductive layer covering the at least one second intermediate opening and having portions covering the at least one first intermediate opening of said first insulating layer, and said second conductive layer having a plurality of third intermediate openings between the portions and substantially aligned with the at least one first intermediate opening;

a third conductive layer substantially aligned with and attached to said second conductive layer by an insulating adhesive disposed therebetween, said third conductive layer covering the plurality of third intermediate openings and extending within the second central opening of said second insulating layer;

a semiconductor die having a plurality of contact pads connected to electronic circuits within said die, the proximate ends of the plurality of conductive traces are connected to the contact pads of the semiconductor die within the first central opening of said first insulating layer;

selected ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the at least one second intermediate opening and are connected to said second conductive layer;

said selected ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the at least one first intermediate opening and are connected to said second conductive layer;

selected other ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the second central opening and are connected to said third conductive layer; and

said selected other ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the plurality of third intermediate openings and are connected to said third conductive layer,

wherein said second and third conductive layers connect together all of the proximate and distal ends of said selected ones and said selected other ones, respectively, of the plurality of conductive traces of said first conductive layer.

8. An electronic system, comprising:

at least one semiconductor device mounted on a multi-layered tape automated bonding assembly, comprising;

a first insulating layer having first and second substantially parallel surfaces, a first central opening adapted to receive a semiconductor die, a first outside perimeter, at least one first intermediate opening biased toward the first outside perimeter, and at least one second intermediate opening biased toward the first central opening;

a first conductive layer having a plurality of conductive traces disposed on the first surface of said first insulating layer, across the at least one first and second intermediate openings, extending within the first central opening and extending from the first outside perimeter of said first insulating layer,

wherein each of the plurality of conductive traces of said first conductive layer has a proximate end adapted for connection to a contact pad of a semiconductor die in the first central opening, and a distal end adapted for connection to external circuits proximate the first outside perimeter of said first insulating layer;

a second conductive layer disposed on the second surface of said first insulating layer, said second conductive layer covering the at least one second intermediate opening and having portions covering the at least one first intermediate opening of said first insulating layer, and said second conductive layer having a plurality of third intermediate openings between the portions and substantially aligned with the at least one first intermediate opening;

a second insulating layer having third and fourth substantially parallel surfaces, a second central opening adapted to receive the semiconductor die and substantially aligned with the first central opening of said first insulating layer, a plurality of fourth intermediate openings substantially aligned with the plurality of third intermediate openings of said second conductive layer, and a second outside perimeter substantially aligned with the first outside perimeter, said second insulating layer disposed on an opposite side of said second conductive layer from the first insulating layer;

a third conductive layer disposed on a side of said second insulating layer opposite the second conductive layer, across the plurality of fourth intermediate openings and extending within the second central opening of said second insulating layer;

selected ones connected to the proximate ends of the plurality of conductive traces of said first conductive layer are adapted to be cut and urged within the at least one second intermediate opening and connected to said second conductive layer;

said selected ones connected to the distal ends of the plurality of conductive traces of said first conductive layer are adapted to be cut and urged into the at least one intermediate opening and connected to said second conductive layer;

selected other ones connected to the proximate ends of the plurality of conductive traces of said first conductive layer are adapted to be cut and urged into the second central opening and connected to said third conductive layer; and

said selected other ones connected to the distal ends of the plurality of conductive traces of said first conductive layer are adapted to be cut and urged into the plurality of fourth intermediate openings for connection to said third conductive layer.

9. An electronic system, comprising:

at least one semiconductor device assembly, comprising;

a first insulating layer having first and second substantially parallel surfaces, a first central opening adapted to receive a semiconductor die, a first outside perimeter, at least one first intermediate opening biased toward the first outside perimeter, and at least one second intermediate opening biased toward the first central opening, the at least one first intermediate opening having a first side proximate the first outside perimeter and a second side having alternating portions that are first and second distances from the first side, wherein the second distance being greater than the first distance;

a first conductive layer having a plurality of conductive traces disposed on the first surface of said first insulating layer, across the at least one first and second intermediate openings, extending within the first central opening and from the first outside perimeter of said first insulating layer,

wherein each of the plurality of conductive traces of said first conductive layer has a proximate end in the first central opening and a distal end extending from the first outside perimeter of said first insulating layer;

a second conductive layer disposed on the second surface of said first insulating layer, said second conductive layer covering the at least one second intermediate opening, said second conductive layer having at least one third intermediate opening substantially aligned with the first side and the first distance second side of the at least one first intermediate opening, wherein portions of said second conductive layer are exposed in the second distance second side of the at least one first intermediate opening;

a second insulating layer having third and fourth substantially parallel surfaces, a second central opening adapted to receive the semiconductor die and substantially aligned with the first central opening of said first insulating layer, at least one fourth intermediate opening substantially aligned with the at least one third intermediate opening of said second conductive layer, and a second outside perimeter, said second insulating layer disposed on an opposite side of said second conductive layer from the first insulating layer;

a third conductive layer disposed on a side of said second insulating layer opposite the second conductive layer, across the at least one fourth intermediate opening of the second insulating layer and extending within the second central opening of said second insulating layer;

a semiconductor die having a plurality of contact pads connected to electronic circuits within said die, the proximate ends of the plurality of conductive traces are connected to the contact pads of the semiconductor die within the first central opening of said first insulating layer;

selected ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the at least one second intermediate opening and are connected to said second conductive layer;

said selected ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the at least one first intermediate opening and are connected to said second conductive layer;

selected other ones of the plurality of conductive traces connected to the contact pads of the semiconductor die are cut within the second central opening and are connected to said third conductive layer; and

said selected other ones of the plurality of conductive traces connected to the distal ends of the plurality of conductive traces of said first conductive layer are cut within the at least one fourth intermediate opening and are connected to said third conductive layer,

wherein said second and third conductive layers connect together all of the proximate and distal ends of said selected ones and said selected other ones, respectively, of the plurality of conductive traces of said first conductive layer.

10. An electronic system, comprising:

at least one semiconductor device mounted on a multi-layered tape automated bonding assembly, comprising;

a first insulating layer having first and second substantially parallel surfaces, a first central opening adapted to receive a semiconductor die, a first outside perimeter, at least one first intermediate opening biased toward the first outside perimeter, and at least one second intermediate opening biased toward the first central opening, the at least one first intermediate opening having a first side proximate the first outside perimeter and a second side having alternating portions that are first and second distances from the first side, wherein the second distance being greater than the first distance;

a first conductive layer having a plurality of conductive traces disposed on the first surface of said first insulating layer, across the at least one first and second intermediate openings, extending within the first central opening and from the first outside perimeter of said first insulating layer,

wherein each of the plurality of conductive traces of said first conductive layer has a proximate end adapted for connection to a contact pad of a semiconductor die in the first central opening and a distal end adapted for connection to external circuits proximate the first outside perimeter of said first insulating layer;

a second conductive layer disposed on the second surface of said first insulating layer, said second conductive layer covering the at least one second intermediate opening, said second conductive layer having at least one third intermediate opening substantially aligned with the first side and the first distance second side of the at least one first intermediate opening, wherein portions of said second conductive layer are exposed in the second distance second side of the at least one first intermediate opening;

a second insulating layer having third and fourth substantially parallel surfaces, a second central opening adapted to receive the semiconductor die and substantially aligned with the first central opening of said first insulating layer, at least one fourth intermediate opening substantially aligned with the at least one third intermediate opening of said second conductive layer, and a second outside perimeter, said second insulating layer disposed on an opposite side of said second conductive layer from the first insulating layer;

a third conductive layer disposed on a side of said second insulating layer opposite the second conductive layer, across the at least one fourth intermediate opening of the second insulating layer and extending within the second central opening of said second insulating layer;

selected ones connected to the proximate ends of the plurality of conductive traces are adapted to be cut and urged into the at least one second intermediate opening and connected to said second conductive layer;

said selected ones connected to the distal ends of the plurality of conductive traces of said first conductive layer are adapted to be cut and urged into the at least one first intermediate opening and connected to said second conductive layer;

selected other ones connected to the proximate ends of the plurality of conductive traces are adapted to be cut and urged into the second central opening and connected to said third conductive layer; and

said selected other ones connected to the distal ends of the plurality of conductive traces of said first conductive layer are adapted to be cut and urged into the at least one fourth intermediate opening and connected to said third conductive layer.

11. An electronic system, comprising:

at least one tape ball grid array (TBGA) semiconductor device package assembly, comprising;

a multi-layered tape automated bonding (TAB) film having a central opening for a semiconductor device, conductive circuit traces on a first layer of the TAB film, a conductive plane on a second layer of the TAB film, solder ball pads connected to the circuit traces, and at least one elongated opening for downbonding selected conductive circuit traces to the conductive plane;

a semiconductor device in the central opening and connected to the circuit traces; and

solder balls arranged in a grid array on the solder ball pads and adapted for connecting the semiconductor device to external circuits.

12. The system of claim 11, wherein the at least one elongated opening is between the central opening and the solder ball grid array.

13. The system of claim 11, wherein the at least one elongated opening is between rows of the solder ball grid array.

14. The semiconductor device package assembly of claim 11, wherein the at least one elongated opening replaces part of a row of the solder ball grid array.

15. An electronic system, comprising:

at least one tape ball grid array (TBGA) semiconductor device package assembly, comprising;

a tape automated bonding (TAB) film having a central opening for a semiconductor device and an outer perimeter, said TAB film having conductive circuit traces disposed on a first surface of an insulating layer, and solder ball pads disposed on the first surface of the insulating layer and connected to the circuit traces; and

a conductive plane attached to a second surface of the insulating layer opposite the conductive circuit traces, said conductive plane extending past the outer perimeter of said TAB film for downbonding selected circuit traces thereto;

a semiconductor device in the central opening and connected to the circuit traces;

solder balls arranged in a grid array on the solder ball pads and adapted for connecting the semiconductor device to external circuits.

16. The system of claim 15, further comprising a raised rim around said conductive plane wherein a space is formed between the perimeter of said TAB film and the raised rim of said conductive plane so that encapsulant may be contained within the space after the selected circuit traces are downbonded to said conductive plane.

17. An electronic system, comprising:

at least one tape ball grid array (TBGA) semiconductor device assembly, comprising;

a tape automated bonding (TAB) tape having solder ball pads;

a layer of patterned photoimageable solder resist over the solder ball pads, the solder resist having openings over the underlying pad, thereby exposing only a desired surface in the patterned resist openings;

a layer of plating over the exposed surfaces of the solder ball pads; and

solder balls electro-mechanically connected to the plated exposed surfaces of the solder pads.