Microchannel cooling of high power semiconductor devices

• US 5,801,442 A
• Filed: 07/22/1996
• Issued: 09/01/1998
• Est. Priority Date: 07/22/1996
• Status: Expired due to Term

• Current Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Original Assignee: Northrop Grumman Corporation
• Inventors: Fagan, Thomas J Jr., Kennedy, Paul G., Arlow, Gregory A., Baker, Martin L., Hamilton, Robin E., Ostop, John, Golombeck, John C.
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US08/681,207
• Time in Patent Office: 771 Days
• Field of Search: 257/714, 257/715, 257/717, 257/712, 257/705, 257/706
• US Class Current: 257/714
• CPC Class Codes: F28F 2260/02 having microchannels
• CPC Class Codes: F28F 3/12 Elements constructed in the shape of a hollow panel, e.g. with channels F28D1/02, F28D1/03 take precedence
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

Cooling of densely packaged semiconductor devices is achieved by microchannels which extract heat by forced convection and the use of fluid coolant located as close as possible to the heat source. The microchannels maximize heat sink surface area and provides improved heat transfer coefficients, thereby allowing a higher power density of semiconductor devices without increasing junction temperature or decreasing reliability. In its preferred embodiment, a plurality of microchannels are formed directly in the substrate portion of a silicon or silicon carbide chip or die mounted on a ground plane element of a circuit board and where a liquid coolant is fed to and from the microchannels through the ground plane. The microchannels comprise a plurality of closed-ended slots or grooves of generally rectangular cross section. Fabrication methods include deposition and etching, lift-off processing, micromachining and laser cutting techniques.

Claims

1. A microchannel cooled semiconductor structure, comprising:

a die of semiconductor material and wherein said semiconductor material is silicon or silicon carbide;

a plurality of semiconductor devices formed in one region of said die; and

a plurality of close-ended forced convection cooling microchannel slots formed in another region of said; and

wherein said microchannel slots have a width ranging between about 0.001 in. and about 0.004 in., a depth ranging between about 0.004 in. and about 0.01 in., and a spacing therebetween ranging between about 0.001 in. and about 0.005 in.

2. A structure according to claim 1 wherein said plurality of semiconductor devices are formed on an upper region of said die of semiconductor material and said plurality of microchannel slots are formed beneath said semiconductor devices in a lower region of said die of semiconductor material.

3. A structure according to claim 1 wherein said microchannel slots have a channel length ranging between about 0.032 in. and about 0.5 in.

4. A structure according to claim 1 wherein said microchannel slots are arranged in mutual parallel relationship.

5. A structure according to claim 4 wherein said plurality of semiconductor devices are also arranged in mutually parallel relationship.

6. A structure according to claim 1 wherein said microchannel slots are aligned in parallel with said plurality of semiconductor devices.

7. A structure according to claim 1 wherein said die of semiconductor material is located on support means including means for coupling a fluid coolant to and from said microchannel slots.

8. A structure according to claim 7 wherein said fluid coolant comprises a liquid coolant.

9. A structure according to claim 8 wherein said support means includes a generally flat mounting flange including a plurality of coolant manifolds located adjacent and transverse to said microchannel slots for supplying said coolant to and receiving said coolant from said microchannel slots.

10. A structure according to claim 9 wherein said plurality of coolant manifolds comprises a pair of elongated mutually parallel recesses formed in said mounting flange.

11. A structure according to claim 10 and additionally including a substrate member located between said die and said mounting flange.

12. A structure according to claim 11 wherein said substrate member includes a pair of elongated coolant slots located over and in alignment with said pair of coolant manifolds in said mounting flange.

13. A structure according to claim 12 wherein said die, said substrate member and said mounting flange are included in a sealed package.

14. A structure according to claim 8 wherein said support means includes a frame member located on a ground plane including a plurality of coolants ducts formed therein, said frame member including a plurality of coolant manifolds coupling said coolant ducts to said microchannel slots.

15. A structure according to claim 14 wherein said plurality of coolant manifolds comprise three coolant manifolds oriented transverse to said microchannel slots for supplying said coolant to and receiving said coolant from said microchannel slots.

16. A structure according to claim 8 wherein said support means includes a substrate member having a U-shaped coolant manifold and an elongated straight coolant manifold located within said U-shaped coolant manifold for supplying coolant to and receiving coolant from said microchannel slots.

17. A structure according to claim 8 wherein said semiconductor devices are comprised of a plurality of transistors.

18. A structure according to claim 17 wherein said plurality of transistors comprise a plurality of RF transistors.

19. A structure according to claim 18 wherein said RF transistors comprise bipolar transistors.

20. A structure according to claim 17 wherein said plurality of transistors comprise a plurality of power switching transistors.

21. A structure according to claim 20 wherein said power switching transistors comprise insulated gate bipolar transistors.

22. A multichannel cooled semiconductor, comprising:

a die of silicon or silicon carbide;

a plurality of heat generating semiconductor devices formed in said die; and

a plurality of close-ended cooling microchannel slots formed directly in said die in relatively close proximity to said plurality of semiconductor devices to provide convection cooling of said semiconductor devices, and

wherein said microchannel slots have a width ranging between about 0.001 in. and about 0.004 in., a depth ranging between about 0.004 in. and about 0.01 in., a spacing therebetween ranging between about 0.001 in. and about 0.005 in., and a channel length ranging between about 0.032 in. and about 0.5 in.