Gated filament structures for a field emission display

• US 5,801,477 A
• Filed: 01/31/1995
• Issued: 09/01/1998
• Est. Priority Date: 09/08/1993
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.), Silicon Video Corporation
• Original Assignee: Candescent Technologies Corporation (Canon Inc.)
• Inventors: Macaulay, John M.
• Primary Examiner(s): O'Shea, Sandra L.
• Assistant Examiner(s): Patel, Vip
• Application Number:
  US08/383,410
• Time in Patent Office: 1,309 Days
• Field of Search: 313/309, 313/336, 313/351, 313/445
• US Class Current: 313/309
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 2201/30403 characterised by the emitter shape
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 3/022 with microengineered cathode, e.g. Spindt-type
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where,

L≦(s+r)/2.

Claims

1. A gated filament structure for a field emission display including a plurality of filaments, comprising:

a substrate;

an insulating layer positioned adjacent to the substrate;

a metal gate layer, with a plurality of gates, the metalgate layer being positioned adjacent to the insulating layer and having an average thickness "s" and a top metal gate layer planar surface substantially parallel to a bottom metal gate layer planar surface, the metal gate layer including a plurality of apertures extending through the metal gate layer, each aperture having an average width "r" along a bottom planar surface of the aperture, each aperture defining a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface; and

a plurality of filaments each with a filament tip terminating at a point "A" and a filament axis extending along a length of the filament through filament tip, each filament positioned in an aperture, an intersection of the filament axis and the midpoint plane defining a point "O" with a majority of all filament tips of the display having a length "L" between each filament tip at point A and point O along the filament axis where,

space="preserve" listing-type="equation">L≦

(s+r)/2.

2.

2. The gated filament structure of claim 1, wherein at least 75% of all filament tips of the display have a length L between each filament tip at point A and point O along the filament axis where,

3. The gated filament structure of claim 1, wherein at least 90% of all filament tips of the display have a length L between each filament tip at point A and point O along the filament axis where,

4. The gated filament structure for a field emission display of claims 1, 2 or 3, wherein the field emission display has a six inch diagonal dimension.

5. The gated filament structure for a field emission display of claims 1, 2 or 3, wherein the field emission display has an eight inch diagonal dimension.

6. The gated filament structure for a field emission display of claims 1, 2 or 3, wherein the field emission display has a ten inch diagonal dimension.

7. The gated filament structure for a field emission display of claims 1, 2 or 3, wherein the plurality of gated filaments are electroplated.

8. The gated filament structure for a field emission display of claim 1, wherein point A is positioned above the top metal gate layer planar surface.

9. The gated filament structure for a field emission display of claim 1, wherein point A is positioned bellow the bottom metal gate layer planar surface.

10. The gated filament structure of claim 1, wherein the thickness of the insulating layer varies in the display.

11. The gated filament structure of claims 1, 2 or 3, wherein each filament is vertically self aligned in its associated aperture.

12. The gated filament structure of claim 1, further comprising:

a metal row electrode positioned on a top surface of the substrate.

13. The gated filament structure of claim 12, wherein the field emission display has a ten inch diagonal and the filaments are electroplated.

14. The gated filament structure of claim 12, further comprising:

a resistive layer at least partially positioned on a top surface of the metal row electrode.

15. The gated filament structure of claim 1 wherein the aperture has a size of about 0.1 microns or greater.