Semiconductor module for a power conversion device

• US 5,801,936 A
• Filed: 06/07/1995
• Issued: 09/01/1998
• Est. Priority Date: 12/20/1990
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Saito, Ryuichi, Mori, Mutsuhiro, Kimura, Shin, Horie, Akira, Nakata, Kiyoshi, Koike, Yoshihiko, Sekine, Shigeki, Saitoo, Syuuji
• Primary Examiner(s): Sterrett, Jeffrey L.
• Application Number:
  US08/480,399
• Time in Patent Office: 1,182 Days
• Field of Search: 363/43, 363/98, 363/132
• US Class Current: 363/132
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/18 Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01055 : Cesium [Cs]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/487 : Neutral point clamped inverters
• CPC Class Codes: H03K 17/08148 : in composite switches

Abstract

An inverter device includes plural modules, each module being formed by a series circuit having a parallel circuit of a first switching device and a first diode, and a parallel circuit of a second switching device and a second diode, allowing a reduced size, high reliability, high frequency switching and low noise.

Claims

1. A power conversion device having a predetermined number of phases comprising:

an intermediate node at a potential intermediate between potentials of a pair of d.c. terminals;

a.c. terminals equal in number to the number of phases of the power conversion device;

a plurality of arms each connected between one of said d.c. terminals and one of said a.c. terminals, each of said arms comprising two parallel circuits connected in series, each parallel circuit including a switching device and a diode opposite in conductive direction to said switching device; and

a plurality of diodes each connected between said intermediate node and a node between said two parallel circuits,

wherein different lifetimes are set for said switching device and said diode of each of said parallel circuits to decrease power loss in the power conversion device,

wherein lifetimes of said diodes and said switching devices are set to equalize recovery losses and forward voltage losses for said diodes, or switching losses and on-state voltage losses for said switching devices in the power conversion device.

2. A power conversion device according to claim 1, wherein a lifetime control is applied to said switching devices of said parallel circuits coupled to said d.c. terminals so that a lifetime of said switching devices of said parallel circuits coupled to d.c. terminals is shorter than a lifetime of said diodes connected between said intermediate node and a node between said two parallel circuits.

3. A power conversion device according to claim 2, wherein said lifetime control comprises irradiating said switching devices of said parallel circuit coupled to said d.c. terminals with an electron beam.

4. A power conversion device according to claim 3, wherein said switching devices are insulated gate bipolar transistors.

5. A power conversion device according to claim 4, wherein said insulated gate bipolar transistors are used for a vehicle driven by at least 1500 volts of line voltage.

6. A power conversion device according to claim 4, wherein said insulated gate bipolar transistors have a blocking voltage of at least 2000 volts.

7. A power conversion device according to claim 1, wherein a lifetime control is applied to said diodes connected between said intermediate node and a node between said two parallel circuits terminal so that lifetimes of said diodes connected between said intermediate node and a node between said two parallel circuits are shorter than lifetimes of said switching devices of said parallel circuits coupled to said a.c. terminals.

8. A power conversion device according to claim 2, wherein said lifetime control comprises irradiating said diodes connected between said intermediate node and a node between said two parallel circuits.

9. A power conversion device according to claim 8, wherein said switching devices are insulated gate bipolar transistors.

10. A power conversion device according to claim 9, wherein said insulated gate bipolar transistors are used for a vehicle driven by at least 1500 volts of line voltage.

11. A power conversion device according to claim 9, wherein said insulated gate bipolar transistors have a blocking voltage of at least 2000 volts.

14. A power conversion device according to claim 10, wherein said switching device is an isulated gate bipolar transistor.

12. A power conversion device having a predetermined number of phases comprising:

a pair of d.c. terminals;

an intermediate node at a potential intermediate between potentials of said pair of d.c. terminals;

a.c. terminals equal in number to the number of phases of the power conversion device;

a plurality of arms each connected between one of said d.c. terminals and one of said a.c. terminals, each of said arms comprising two parallel circuits connected in series, each parallel circuit including a switching device and a diode opposite in conductive direction to said switching device; and

a plurality of diodes each connected between said intermediate node and a node between said two parallel circuits,

wherein a lifetime control is applied to at least one of said diodes connected between said intermediate node and a node between said two parallel circuits so that a lifetime of said at least one diode connected between said intermediate node and a node between said two parallel circuits is shorter than a lifetime of at least one of said diodes of said parallel circuits coupled to one of said a.c. terminals to decrease switching loss and switching time,

wherein lifetimes of said diodes and said switching devices are set to equalize recovery losses and forward voltage losses for said diodes, or switching losses and on-state voltage losses for said switching devices in the power conversion device.

13. A power conversion device according to claim 12, wherein said lifetime control comprises irradiating said diode connected between said intermediate node and a node between said two parallel circuits with an electron beam.

15. A power conversion device having a predetermined number of phases comprising:

an intermediate node at a potential intermediate between potentials of a pair of d.c. terminals;

a.c. terminals equal in number to the number of phases of the power conversion device;

a plurality of arms each connected between one of said d.c. terminals and one of said a.c. terminals, each of said arms comprising two parallel circuits connected in series, each parallel circuit including a switching device and a diode opposite in conductive direction to said switching device; and

a plurality of diodes each connected between said intermediate node and a node between said two parallel circuits,

wherein a lifetime control is applied to at least one of said diodes of one of said parallel circuits coupled to one of said d.c. terminals so that a lifetime of said at least one diode of said parallel circuit coupled to the d.c. terminal is shorter than a lifetime of said diode connected between said intermediate node and a node between said two parallel circuits to decrease switching loss and switching time,

wherein lifetimes of said diodes and said switching devices are set to equalize recovery losses and forward voltage losses for said diodes, or switching losses and on-state voltage losses for said switching devices in the power conversion device.

16. A power conversion device according to claim 15, wherein said switching device is an insulated gate bipolar transistor.

17. A power conversion device according to claim 15, wherein said lifetime control comprises irradiating said diode connected between said intermediate node and a node between said two parallel circuits with an electron beam.

18. A power conversion device having a predetermined number of phases comprising:

a pair of d.c. terminals;

an intermediate node at a potential intermediate between potentials of said pair of d.c. terminals;

a.c. terminals equal in number to the number of phases of the power conversion device;

a plurality of arms each connected between one of said d.c. terminals and one of said a.c. terminals, each of said arms comprising two parallel circuits connected in series, each parallel circuit including a switching device and a diode opposite in conductive direction to said switching device; and

a plurality of diodes each connected between said intermediate node and a node between said two parallel circuits,

wherein lifetimes of the diodes and switching devices are set to equalize losses in the power conversion device.

19. A power conversion device according to claim 18, wherein one or more of said lifetimes of said diodes and said switching devices are set by irradiating said diodes and said switching devices with an electron beam.