Nonvolatile memory device
First Claim
1. A nonvolatile memory device comprising:
- a plurality of program/select lines arranged in a row direction spaced apart from each other at first prescribed intervals;
a plurality of bit lines arranged in a column direction spaced apart from each other in second prescribed intervals to form a matrix of a plurality of square areas; and
a plurality of control lines disposed in the column direction and adjacent to the bit lines in a one-to-one correspondence;
a plurality of cells, each disposed in one of the square areas and including a source, a drain, a channel region, a select/program gate for selecting a cell for programming and conducting the programming by means of charge carriers, a floating gate for storing the charge carriers by means of tunneling through the channel region in erasure of a tunneling diode and providing the stored charge carriers to the program/select gate through the tunneling diode in programming, and a control gate for controlling an amount of the charge carriers provided from the floating gate to the program/select gate,wherein the program/select gates in the cells disposed on the same row are connected to one of the program/select lines in common, the control gates in the cells disposed on the same column are connected to one of the control lines in common, and the sources(or drains) in the cells disposed on the same row are connected to one of the bit lines in common, together with one of the drains and sources of the cells disposed on an adjacent row.
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0 Petitions
Accused Products
Abstract
A nonvolatile memory device includes a plurality of program/select lines arranged in a row direction spaced apart from each other in first prescribed intervals, a plurality of bit lines arranged in a column direction spaced apart from each other in second prescribed intervals at a substantially right angle to the plurality of the program/select lines to form a matrix of a plurality of square areas, and a plurality of control lines disposed in the column direction and adjacent to the bit lines in a one-to-one correspondence. Each cell is disposed in one of the square areas, and has a source, a drain, and a channel region. Further, a select/program gate of each cell allows the selection of the cell for programming and conducting the programming by means of charge carriers. A floating gate stores the charge carriers by means of tunneling through the channel region during erasure and provides the stored charge carriers to the program/select gate through the tunneling diode during programming. A control gate controls an amount of the charge carriers provided from the floating gate to the program/select gate. The program/select gates in the cells disposed in the same row are commonly connected to one of the program/select lines, and the control gates in the cells disposed in the same column are commonly connected to one of the control lines. The sources (or drains) in the cells disposed in the same row are commonly connected to one of the bit lines, together with the drains (or sources) of the cells disposed in an adjacent row.
70 Citations
25 Claims
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1. A nonvolatile memory device comprising:
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a plurality of program/select lines arranged in a row direction spaced apart from each other at first prescribed intervals; a plurality of bit lines arranged in a column direction spaced apart from each other in second prescribed intervals to form a matrix of a plurality of square areas; and a plurality of control lines disposed in the column direction and adjacent to the bit lines in a one-to-one correspondence; a plurality of cells, each disposed in one of the square areas and including a source, a drain, a channel region, a select/program gate for selecting a cell for programming and conducting the programming by means of charge carriers, a floating gate for storing the charge carriers by means of tunneling through the channel region in erasure of a tunneling diode and providing the stored charge carriers to the program/select gate through the tunneling diode in programming, and a control gate for controlling an amount of the charge carriers provided from the floating gate to the program/select gate, wherein the program/select gates in the cells disposed on the same row are connected to one of the program/select lines in common, the control gates in the cells disposed on the same column are connected to one of the control lines in common, and the sources(or drains) in the cells disposed on the same row are connected to one of the bit lines in common, together with one of the drains and sources of the cells disposed on an adjacent row. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory device comprising:
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a) a plurality of bit lines arrange in a first direction; b) a plurality of select lines in a second direction to form a matrix of predetermined areas; c) a plurality of control lines in a third direction which is substantially parallel with one of said plurality of bit lines and said plurality of select lines; d) a plurality of memory cells, each memory cell being disposed in each predetermined area defined by corresponding bit line and select line and including; i) first and second electrodes and a channel region therebetween, said first electrode being coupled to a corresponding bit line and said second electrode coupled to one of said plurality of bit lines adjacent to the corresponding bit line; ii) a first gate for storing a prescribed amount of charge carriers; iii) a second gate, coupled to a corresponding select line, for selecting a memory cell for a prescribed operation; and iv) a third gate, coupled to a corresponding control line, for inducing a transfer of charge carrier from said first gate to said second gate during programming operation, wherein a first current path due to the transfer of charge carriers is separate from a second current path due to a current flowing between said first and second electrodes. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification