Use of chemical mechanical polishing in micromachining

• US 5,804,084 A
• Filed: 10/11/1996
• Issued: 09/08/1998
• Est. Priority Date: 10/11/1996
• Status: Expired due to Term

• Current Assignee: Sandia Corporation (Martin Marietta Corporation)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Apblett, Christopher A., Sniegowski, Jeffry J., McWhorter, Paul J., Hetherington, Dale L., Nasby, Robert D.
• Primary Examiner(s): Gupta, Yogendra N.
• Application Number:
  US08/729,122
• Time in Patent Office: 697 Days
• Field of Search: 438/50, 438/52, 438/53, 438/692, 438/633, 216/2, 216/11, 216/88, 216/89
• US Class Current: 216/2
• CPC Class Codes: B81C 1/00611 Processes for the planarisation of structures planarising depositions C23C, H01L
• CPC Class Codes: B81C 2201/0125 Blanket removal, e.g. polishing

Abstract

A process for removing topography effects during fabrication of micromachines. A sacrificial oxide layer is deposited over a level containing functional elements with etched valleys between the elements such that the sacrificial layer has sufficient thickness to fill the valleys and extend in thickness upwards to the extent that the lowest point on the upper surface of the oxide layer is at least as high as the top surface of the functional elements in the covered level. The sacrificial oxide layer is then polished down and planarized by chemical-mechanical polishing. Another layer of functional elements is then formed upon this new planarized surface.

Claims

1. A method of micromachining a multilayer micromachine comprising:

forming a level of mechanical structures (hereinafter the first level) above which at least one more level of mechanical structures is to be formed;

depositing at least one layer of sacrificial material onto the first level of mechanical structures to fill at least a portion of the voids between the underlying mechanical structures in at least one portion of the first level;

removing at least some of the sacrificial material above the mechanical structures in at least a portion of the first level by chemical mechanical polishing to form a first planar surface; and

forming a second level of mechanical structures on the first planar surface to engage with mechanical structures below the second level.

2. The method of claim 1 further comprising:

depositing at least one layer of sacrificial material onto the second level of mechanical structures to fill at least some of the voids between the underlying mechanical structures in at least one portion of the second level;

removing at least some of the sacrificial material above the mechanical structures in at least a portion of the second level by chemical mechanical polishing to form a second planar surface; and

forming a third level of structures above the second planar surface.

3. The method claim 1 further comprising etching away at least a portion of the sacrificial material in at least one selected area from at least a portion of the first planar surface prior to forming the second level of mechanical structures.

4. The method of claim 3 wherein the etching extends down to underlying mechanical structures or to a substrate upon which a bottom layer of mechanical structures are formed.

5. The method of claim 1 further comprising depositing a secondary sacrificial layer of less than about 1 μ

m in thickness upon the first planar surface, then etching through the secondary sacrificial layer in selected portions thereof to underlying mechanical structures prior to forming the second level of mechanical structures.

6. The method of claim 5 wherein the secondary sacrificial layer is less than about 1000 Å

in thickness.

7. The method of claim 1 wherein the mechanical structures are formed from polysilicon.

8. The method of claim 1 wherein the sacrificial material is silicon dioxide.

9. The method of claim 1 wherein the mechanical structures are selected from the group consisting of gears, hubs, linkage arms, pump containment housings and combinations thereof.

10. A method of micromachining a multilayer micromachine comprising:

forming a level of mechanical structures (hereinafter the first level) above which at least one more level of mechanical structures is to be formed;

depositing at least one layer of sacrificial material onto the first level of mechanical structures to fill the voids between the underlying mechanical structures to a point above the top of the mechanical structures in at least one portion of the first level;

removing at least a portion of the sacrificial material above the mechanical structures in at least a portion of the first level by chemical mechanical polishing to form a first planar surface; and

forming a second level of mechanical structures on the first planar surface to engage with mechanical structures below the second level.

11. The method of claim 10 further comprising:

depositing at least one layer of sacrificial material onto the second level of mechanical structures to fill the voids between the underlying mechanical structures to a point above the top of the mechanical structures in at least one portion of the second level;

removing at least a portion of the sacrificial material above the mechanical structures in at least a portion of the second level by chemical mechanical polishing to form a second planar surface; and

forming a third level of structures above the second planar surface.

12. The method claim 10 further comprising etching away at least a portion of the sacrificial material in at least one selected area from at least a portion of the first planar surface prior to forming the second level of mechanical structures.

13. The method of claim 12 wherein the etching extends down to underlying mechanical structures or to a substrate upon which a bottom layer of mechanical structures are formed.

14. The method of claim 10 further comprising depositing a secondary sacrificial layer of less than about 1 μ

m in thickness upon the first planar surface, then etching through the secondary sacrificial layer in selected portions thereof to underlying mechanical structures prior to forming the second level of mechanical structures.

15. The method of claim 14 wherein the secondary sacrificial layer is less than about 1000 Å

in thickness.