Advanced semiconductor emitter technology photocathodes
First Claim
1. A photon detector comprisinga photocathode device for absorbing a photon of light and emitting an electron,amplification means to multiply the number of electrons, andreadout means to convert the electrons into an electrical signal,said photocathode device comprisingdetector structure means for absorbing the photons and creating an electron-hole pair,voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission,electrical contacts and shields to create and shape the electric fields from the voltage means,emitter structure means comprisingcone-shaped emitters to transfer the electron from the inside of the device to the outside of the photocathode device.
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Accused Products
Abstract
A detector to be used for detecting photons from the visible to far infrared spectrum is described. The detector uses unique photocathodes called Advanced Semiconductor Emitter Technology (ASET) as its critical element for converting the detected photons to electrons which are emitted into a vacuum. The electron is multiplied by accelerations and collisions creating a signal larger than the sensor noise and thus allowing the photon to be detected. ASET is/composed of distinct detector and emitter technologies.
33 Citations
33 Claims
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1. A photon detector comprising
a photocathode device for absorbing a photon of light and emitting an electron, amplification means to multiply the number of electrons, and readout means to convert the electrons into an electrical signal, said photocathode device comprising detector structure means for absorbing the photons and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means comprising cone-shaped emitters to transfer the electron from the inside of the device to the outside of the photocathode device.
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8. A photocathode device for absorbing a photon of light and emitting an electron, comprising
detector structure means for absorbing the light and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means comprising cone-shaped emitters to transfer the electron from the inside of the device to the outside of the device.
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19. A photocathode device for absorbing a photon of light and emitting an electron, comprising
detector structure means for absorbing the light and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means to transfer the electron from the inside of the device to the outside of the device, wherein the detector structure means is separated from the emitter structure means by an ion-implanted grid electrode.
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20. A photocathode device for absorbing a photon of light and emitting an electron, comprising
detector structure means for absorbing the light and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means to transfer the electron from the inside of the device to the outside of the device, wherein the detector structure means is separated from the emitter structure means by an epitaxially-grown grid electrode.
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23. A photocathode device for absorbing a photon of light and emitting an electron, comprising
detector structure means for absorbing the light and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means to transfer the electron from the inside of the device to the outside of the device, wherein the emitter structure comprises cone-shaped emitters etched into the detector substrate.
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25. A photocathode device for absorbing a photon of light and emitting an electron, comprising
detector structure means for absorbing the light and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means to transfer the electron from the inside of the device to the outside of the device, wherein the emitter structure means comprises cone-shaped emitters which are greater than 3 μ - m and less than 20 μ
m tall.
- m and less than 20 μ
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26. A photocathode device for absorbing a photon of light and emitting an electron, comprising
detector structure means for absorbing the light and creating an electron-hole pair, voltage means for creating electric fields within and outside the device to separate the electron from the hole and aid in electron emission, electrical contacts and shields to create and shape the electric fields from the voltage means, emitter structure means to transfer the electron from the inside of the device to the outside of the device, wherein the emitter structure means comprises cone-like emitters which are greater than 3 μ - m and less than 20 μ
m in diameter.
- m and less than 20 μ
Specification