Semiconductor device having contact resistance reducing layer

• US 5,804,834 A
• Filed: 07/07/1997
• Issued: 09/08/1998
• Est. Priority Date: 10/28/1994
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.)
• Inventors: Shimoyama, Kenji, Gotoh, Hideki
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/888,641
• Time in Patent Office: 428 Days
• Field of Search: 257/22, 257/17, 257/103, 257/94, 257/95, 257/96, 257/97, 257/98, 257/99, 372/45, 372/46, 372/49, 372/99
• US Class Current: 257/22
• CPC Class Codes: H01L 29/201 including two or more compounds , e.g. alloys H01L29/2006 takes precedence
• CPC Class Codes: H01L 29/452 on AIII-BV compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

In a wide band cap semiconductor, a GaP_x N_1-x (0.1≦x≦0.9) layer is inserted between a layer comprising AlGaInN and an electrode, The potential barrier between the electrode and the surface layer can be reduced. Contact resistance can be decreased, and ohmic contact can be easily taken up.

Claims

1. A semiconductor device, comprising a thin film GaP_x N_1-x (0.1≦

x≦

0.9) layer between a layer of AlGaInN and an electrode.

2. A semiconductor device according to claim 1, wherein said layer of AlGaInN is of p-type.

3. A semiconductor device according to claim 1 or 2, wherein said GaP_x N_1-x (0.1≦

x≦

0.9) layer is formed by alternately laminating a GaP_y N_1-y (y≧

0.9) layer and a GaP_z N_1-z (z≦

0.1) layer.

4. A semiconductor device according to claim 3, wherein said GaP_y N_1-y (y≧

0.9) layer and said GaP_z N_1-z (Z≦

0.1) layer are not thicker than 10 molecular layers.

5. A semiconductor device, comprising a distributed Bragg reflector comprising an Al_x Ga_1-x P (0 ≦

x<

1) layer and an Al_y Ga_1-y P (0<

y≦

1, x<

y) layer alternately grown and an AlGaInN light emitting layer, said distributed Bragg reflector being provided at least one of (1) above said light emitting layer and (2) under said light emitting layer.

6. A semiconductor device according to claim 5, further comprising a substrate having a band gap not greater than a band gap of the light emitting layer.

7. A semiconductor device according to claim 6, wherein said distributed Bragg reflector is provided between the substrate and the light emitting layer.

8. A semiconductor device according to claim 6, which has a GaP substrate.

9. A semiconductor device according to claim 8, wherein a surface of the GaP substrate is a {111} B face.

10. A semiconductor device according to claim 5, wherein said distributed Bragg reflector is provided between the light emitting layer and an electrode.

11. A semiconductor device according to claim 5, wherein said distributed Bragg reflector is provided as one of either (1) above said light emitting layer or (2) under said light emitting layer.

12. A semiconductor device according to claim 11, wherein said semiconductor device is a light emitting diode.