High Q compact inductors for monolithic integrated circuit applications
First Claim
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1. A monolithic inductor device which including a substrate having a dielectric constant of 12.9, wherein the improvement therewith comprising:
- a layer of dielectric material comprising a cured, dehydrated polyamide film having a dielectric constant of 3.0 and a thickness of 10 um disposed over said substrate;
a first inductor pattern disposed directly onto said substrate, wherein said first inductor pattern is disposed between said substrate and said dielectric material;
a second inductor pattern disposed on said dielectric layer,means for coupling said first inductor pattern with said second inductor pattern so as to form a single inductive element extending through said dielectric material having said dielectric constant less than the dielectric constant of said substrate to reduce dissipation losses and improve the frequency response of the device.
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Abstract
A monolithic inductor device is disclosed which typically includes a substrate. The improvement includes a layer of dielectric material disposed over the substrate. A first inductor pattern disposed on the substrate and a second inductor pattern disposed on the dielectric layer. The inductor patterns are coupled together to form a single inductive element, which has reduced dissipation losses and an improved frequency response due to the dielectric material.
36 Citations
16 Claims
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1. A monolithic inductor device which including a substrate having a dielectric constant of 12.9, wherein the improvement therewith comprising:
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a layer of dielectric material comprising a cured, dehydrated polyamide film having a dielectric constant of 3.0 and a thickness of 10 um disposed over said substrate; a first inductor pattern disposed directly onto said substrate, wherein said first inductor pattern is disposed between said substrate and said dielectric material; a second inductor pattern disposed on said dielectric layer, means for coupling said first inductor pattern with said second inductor pattern so as to form a single inductive element extending through said dielectric material having said dielectric constant less than the dielectric constant of said substrate to reduce dissipation losses and improve the frequency response of the device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A monolithic inductor device, comprising:
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a substrate having a dielectric constant of 12.9, a layer of dielectric material comprising a cured, dehydrated polyamide film having a dielectric constant of 3.0 disposed over said substrate; a first inductor pattern disposed directly onto said substrate wherein said first inductor pattern is disposed between said substrate and said dielectric material; a second inductor pattern disposed on said dielectric layer, means for coupling said first inductor pattern with said second inductor pattern so as to form a single inductive element extending through said dielectric material having said dielectric constant less than the dielectric constant of said substrate to reduce dissipation losses and improve the frequency response of the device. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification