Photoelectric conversion element having an infrared transmissive indium film

• US 5,805,333 A
• Filed: 07/29/1996
• Issued: 09/08/1998
• Est. Priority Date: 06/24/1993
• Status: Expired due to Fees

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Inventors: Torikoshi, Kaoru, Tanaka, Hiroyuki
• Primary Examiner(s): Dzierzynski, Paul M.
• Assistant Examiner(s): Juba, Jr., John
• Application Number:
  US08/688,196
• Time in Patent Office: 771 Days
• Field of Search: 359/269, 359/270, 359/273, 359/275, 359/359, 359/360, 359/350
• US Class Current: 359/350
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

An infrared ray transmissive conductive substrate contains (1) a solid surface showing a transparency to at least the near infrared region and (2) an indium-tin-oxide containing transparent electrode having a sufficient light transmission property to at least the near infrared region formed on the solid surface. The indium-tin-oxide containing transparent electrode is formed on the solid surface by coating the solid surface with a solution containing an organic indium compound and an organic tin compound and thermally decomposing the organic indium compound and organic tin compound-containing solution.

Claims

1. An infrared ray transmissive conductive substrate comprising a solid substrate at least partially transparent to at least a near infrared region and a transparent electrode that comprises indium-tin-oxide,

wherein said transparent electrode is located on said solid substrate and is sufficiently transparent at least to transmit at least 90% of light for all wavelengths in at least a range from 500 nm to 2000 nm;

and

said indium-tin-oxide comprises 0 to 40 wt. % tin based on a mass of indium and tin in said indium-tin-oxide.

2. The infrared ray transmissive conductive substrate according to claim 1, wherein said indium-tin-oxide containing transparent electrode is formed on said solid substrate by (1) coating said solid substrate with a solution containing an organic indium compound and an organic tin compound dissolved in an aliphatic organic solvent and (2) thermally decomposing said organic indium compound and organic tin compound-containing solution;

and

said organic tin compound is chosen from (R₂ COO)₂ Sn, wherein R₂ is selected from the group consisting of an alkyl group having 4-16 carbon atoms and (CH₃ COCHCOCH₃)₂ Sn.

3. An infrared ray transmissive conductive substrate comprising a crystalline substrate at least partially transparent to at least a near infrared region and a transparent electrode that comprises indium-tin-oxide,

wherein said transparent electrode is located on said crystalline substrate and is sufficiently transparent at least to transmit at least 90% of light for all wavelengths in at least a range from 500 nm to 2000 nm.

4. The infrared ray transmissive conductive substrate according to claim 3, wherein said crystalline substrate is one of the group consisting of quartz and silicon.

5. The infrared ray transmissive conductive substrate according to claim 3;

wherein said crystalline substrate is polycrystalline.

6. The infrared ray transmissive conductive substrate according to claim 3, wherein said indium-tin-oxide comprises 0 to 40 wt. % tin based on a mass of indium and tin in said indium-tin-oxide.