Method for real-time in-situ monitoring of a trench formation process

• US 5,807,761 A
• Filed: 07/19/1996
• Issued: 09/15/1998
• Est. Priority Date: 07/24/1995
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Canteloup, Jean, Coronel, Philippe
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): Alejandro, Luz
• Application Number:
  US08/683,934
• Time in Patent Office: 788 Days
• Field of Search: 156/643.1, 156/626.1, 156/644.1, 156/657.1, 216/63, 216/67, 216/59, 216/60, 204/298.32, 204/192.13, 204/192.33, 438/7, 438/8, 438/9, 438/14, 438/101, 438/102, 438/694, 438/695, 438/719, 438/723
• US Class Current: 438/14
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In the manufacturing of 16 Mbit DRAM chips, the deep trench formation process in a silicon wafer by plasma etching is a very critical step when the etching gas includes 0₂. As a result, the monitoring of the trench formation process and thus the etch end point determination is quite difficult. The disclosed monitoring method is based on zero order interferometry. The wafer is placed in a plasma etcher and a plasma is created. A large area of the wafer is illuminated through a view port by a radiation of a specified wavelength at a normal angle of incidence. The reflected light is collected then applied to a spectrometer to generate a primary signal S of the interferometric type. Next, this signal is applied in parallel to two filters. A low-pass filter produces a first secondary signal S1 that contains data related to the deposition rate and the redeposited layer thickness. A band-pass filter produces a second secondary signal S2 that contains data related to the trench etch rate and depth. The band-pass filter is centered around the fundamental frequency of the interferometry phenomenon. These filtered signals are monitored as standard and the trench formation parameters such as the SiO₂ redeposited layer thickness and the trench depth are accurately measured in real time to allow an accurate determination of the etch end point. It is worthwhile to have the optical emission of the plasma viewed by another spectrometer to generate a second primary signal S* that is used to validate the parameter measurements.

Claims

1. A method for real-time and in-situ monitoring of trench depth and silicon dioxide redeposited layer thickness parameters during a trench formation process on a silicon wafer comprising the steps of:

a) placing the wafer in an evacuated reaction chamber of an etching apparatus;

b) using an oxygen-comprising plasma to etch a desired pattern of trenches in at least a portion of said wafer such that a silicon dioxide layer is redeposited during trench formation;

c) illuminating an area of said portion with a light beam including at least one first radiation wavelength to produce a reflected interferometric light beam;

d) applying the reflected light to a spectrometer to generate a primary signal;

e) processing said primary signal to extract a first secondary signal having a low frequency component and a second secondary signal having a higher frequency component, wherein said first secondary signal is representative of a deposition rate of said silicon dioxide layer, and said second secondary signal is representative of an etch rate of said trenches;

f) monitoring said silicon dioxide layer deposition with said first secondary signal and a depth of said trenches with said second secondary signal; and

,

g) in response to said monitoring, stopping the etching when a desired final trench depth has been attained or upon detecting an anomaly in said silicon dioxide layer deposition.

2. The method of claim 1 further comprising the steps of:

i) simultaneously to step (c) observing, at a zero angle of incidence and a second radiation wavelength, species of the plasma in close proximity to the wafer;

j) applying said second radiation wavelength to a spectrometer to generate another primary signal that is illustrative of the optical emission in the plasma;

k) monitoring one of said another primary signal and a derivative of said another primary signal;

l) correlating the monitored signal of step (k) with said secondary signals to detect an anomaly in the plasma.

3. The method of claim 1 wherein step (e) further comprises:

applying said primary signal to two filters in parallel, wherein said two filters include a low-pass filter to extract the low frequency component and a band pass filter centered around the fundamental frequency of the interferometric phenomenon to extract the high frequency component.

4. The method of claim 3 further comprising the steps of:

i) simultaneously to step (c), observing, at a zero angle of incidence and a second radiation wavelength, species of the plasma in close proximity to the wafer;

j) applying said second radiation wavelength to a spectrometer to generate another primary signal that corresponds to an optical emission from the plasma;

k) monitoring one of said another primary signal and a derivative of said another primary signal;

l) correlating the monitored signal of step (k) with said secondary signals to detect an anomaly in the plasma.

5. The method of claim 4 wherein said at least one first radiation wavelength comprises 447 nm radiation.

6. The method of claim 5 wherein said second radiation wavelength is 447 nm.

7. The method of claim 1 wherein the illumination of an area during step (c) further comprises illuminating a large area of the wafer including a large number of trenches.

8. The method of claim 1 wherein the illumination of an area during step (c) further comprises illuminating a small area of the wafer including a small number of trenches.

9. The method of claim 1 wherein said filters are selected from the group consisting of analog filters and numeric filters.

10. The method of claim 9 wherein said numeric filters are Cauer filters.

11. The method of claim 1 wherein said at least one first radiation wavelength comprises 365 nm radiation.

12. The method of claim 11 wherein said at least one first radiation wavelength is 365 nm.