Uniform distribution of reactants in a device layer

• US 5,807,792 A
• Filed: 12/18/1996
• Issued: 09/15/1998
• Est. Priority Date: 12/18/1996
• Status: Expired due to Term

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Siemens AG
• Inventors: Werner, Christoph, Kirchhoff, Markus, Ilg, Matthias
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Whipple, Matthew
• Application Number:
  US08/768,826
• Time in Patent Office: 636 Days
• Field of Search: 438/782, 438/784, 438/783, 438/760, 438/758, 438/778, 427/255.3, 427/255.5, 148/DIG. 133
• US Class Current: 438/758
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/31625 Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG

Abstract

A method and apparatus for forming a multi-constituent device layer on a wafer surface are disclosed. The multi-constituent device layer is formed by flowing a first chemistry comprising a first constituent and a second chemistry comprising a second constituent via a segmented delivery system into a reaction chamber. The reaction chamber comprises a susceptor for supporting and rotating the wafers. The segmented delivery system comprises alternating first and second segments into which the first and second chemistries, respectively, are flowed. The first segments comprise an area that is greater than an area of the second segments by an amount sufficient to effectively reduce the diffusion path of the first constituent. Reducing the diffusion path of the first constituent results in a more uniform distribution of the first constituent within the device layer.

Claims

1. In device fabrication, a method for forming a multi-constituent device layer on a wafer surface, the device layer comprising first and second constituents is being formed in a reaction chamber comprising a susceptor capable of supporting at least one wafer and alternating first and second segments, the method comprising:

providing at least one wafer on the susceptor;

rotating the susceptor;

flowing a first chemistry comprising the first constituent into the first segments of the reaction chamber;

flowing a second chemistry comprising the second constituent into the second segments of the reaction chamber; and

wherein the first segments comprise an area that is greater than an area of the second segments by an amount sufficient to effectively reduce a diffusion path of the first constituent to result in a more uniform distribution of the first constituent within the layer.

2. The method as recited in claim 1 wherein the amount by which the area of the first segments is greater than the area of the second segments is at least about 20%.

3. The method as recited in claim 1 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 20-400%.

4. The method as recited in claim 1 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 40-350%.

5. The method as recited in claim 1 wherein the amount by which the area of the first segments is greater than the area of the second segments by ranges between about 60-300%.

6. The method as recited in claim 1 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 100-200%.

7. The method as recited in claim 1 wherein a variance of the first constituent within the layer is ≦

about 0.75 wt %.

8. The method as recited in claim 1 wherein a variance of the first constituent within the layer is ≦

about 0.6 wt %.

9. The method as recited in claim 1 wherein a variance of the first constituent within the layer is ≦

about 0.5 wt %.

10. The method as recited in claim 1 wherein the reaction chamber comprises at least 2 first segments and at least 2 second segments.

11. The method as recited in claim 1 wherein the reaction chamber comprises at least 3 first segments and at least 3 second segments.

12. The method as recited in claim 1 wherein the reaction chamber comprises 6 first segments and 6 second segments.

13. The method as recited in claim 12 wherein the area of the first segments ranges between about 35°

-55°

.

14. The method as recited in claim 12 wherein the area of the second segments ranges between about 15°

-25°

.

15. The method as recited in claim 12 wherein the area of the first segments ranges between about 40°

-50°

.

16. The method as recited in claim 12 wherein the area of the second segments ranges between about 10°

-20°

.

17. The method as recited in claim 12 wherein the area of the first segments is about 45°

.

18. The method as recited in claim 12 wherein the area of the second segments is about 15°

.

19. The method as recited in claim 1 wherein the layer comprises BPSG.

20. The method as recited in claim 19 wherein the first chemistry comprises TEB and the second chemistry comprises PH₃.

21. The method as recited in claim 20 wherein the first chemistry further comprises TEOS.

22. The method as recited in claim 21 wherein the first chemistry further comprises oxygen and nitrogen.

23. The method as recited in claim 20 wherein the second chemistry further comprises oxygen and nitrogen.

24. The method as recited in claim 21 wherein the amount by which the area of the first segments is greater than the area of the second segments is at least about 20%.

25. The method as recited in claim 21 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 20-400%.

26. The method as recited in claim 21 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 40-350%.

27. The method as recited in claim 21 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 60-300%.

28. The method as recited in claim 21 wherein the amount by which the area of the first segments is greater than the area of the second segments ranges between about 100-200%.