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Thin film transistor having transparent conductive film

  • US 5,808,315 A
  • Filed: 12/19/1996
  • Issued: 09/15/1998
  • Est. Priority Date: 07/21/1992
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a transistor comprising a pair of impurity regions and a crystalline channel semiconductor region therebetween over an insulating substrate and a gate electrode adjacent to said channel semiconductor region;

    an interlayer insulator provided over said transistor;

    a transparent conductive oxide film provided on said interlayer insulator; and

    a first conductive layer connecting one of said impurity regions of said transistor with said transparent conductive oxide film, said first conductive layer comprising aluminum,wherein a second conductive layer comprising a different material from said first conductive layer is interposed between said first conductive layer and said transparent conductive oxide film in order to prevent a direct contact therebetween.

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