Thin film transistor having transparent conductive film
First Claim
Patent Images
1. A semiconductor device comprising:
- a transistor comprising a pair of impurity regions and a crystalline channel semiconductor region therebetween over an insulating substrate and a gate electrode adjacent to said channel semiconductor region;
an interlayer insulator provided over said transistor;
a transparent conductive oxide film provided on said interlayer insulator; and
a first conductive layer connecting one of said impurity regions of said transistor with said transparent conductive oxide film, said first conductive layer comprising aluminum,wherein a second conductive layer comprising a different material from said first conductive layer is interposed between said first conductive layer and said transparent conductive oxide film in order to prevent a direct contact therebetween.
0 Assignments
0 Petitions
Accused Products
Abstract
According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200° C.
118 Citations
13 Claims
-
1. A semiconductor device comprising:
-
a transistor comprising a pair of impurity regions and a crystalline channel semiconductor region therebetween over an insulating substrate and a gate electrode adjacent to said channel semiconductor region; an interlayer insulator provided over said transistor; a transparent conductive oxide film provided on said interlayer insulator; and a first conductive layer connecting one of said impurity regions of said transistor with said transparent conductive oxide film, said first conductive layer comprising aluminum, wherein a second conductive layer comprising a different material from said first conductive layer is interposed between said first conductive layer and said transparent conductive oxide film in order to prevent a direct contact therebetween. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device comprising:
-
a thin film transistor formed over a substrate, said transistor having source, drain and channel regions; an interlayer insulator formed over said thin film transistor; a pixel electrode formed on said interlayer insulator, said pixel electrode electrically connected to one of said source and drain regions through a contact hole in said interlayer insulator; a lead electrically connecting said one of the source and drain regions and said pixel electrode, said lead comprising aluminum; and a conductive layer interposed between said lead and said one of the source region and the drain region in order to prevent a direct contact therebetween, wherein said conductive layer comprises a different material from said lead. - View Dependent Claims (7, 8, 9)
-
-
10. A semiconductor device comprising:
-
a thin film transistor having a crystalline semiconductor layer including channel, source and drain regions therein, formed over a substrate; an interlayer insulator formed over said thin film transistor; a pixel electrode comprising a transparent conductive oxide formed on said interlayer insulator; a lead formed on said interlayer insulator for electrically connecting one of said source and drain regions and said pixel electrode, said lead comprising aluminum; a conductive layer interposed between said lead and said pixel electrode and between said lead and said one of source and drain regions in order to prevent a direct contact therebetween, wherein said conductive layer comprises a different material from said lead. - View Dependent Claims (11, 12, 13)
-
Specification