Integrated IR, visible and NIR sensor and methods of fabricating same

• US 5,808,350 A
• Filed: 01/03/1997
• Issued: 09/15/1998
• Est. Priority Date: 01/03/1997
• Status: Expired due to Fees

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Jack, Michael D., Ray, Michael, Wyles, Richard H.
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US08/778,934
• Time in Patent Office: 620 Days
• Field of Search: 257/183.1, 257/184, 257/186, 257/188, 257/228, 257/432, 257/438, 257/440, 257/442, 257/447
• US Class Current: 257/440
• CPC Class Codes: G01J 5/10 using electric radiation detectors
• CPC Class Codes: G01J 5/34 using capacitors, e.g. pyroelectric capacitors
• CPC Class Codes: H01L 27/14652 Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
• CPC Class Codes: H10N 15/10 Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point

Abstract

An imaging device (10) has a plurality of unit cells that contribute to forming an image of a scene. The imaging device includes a layer of semiconductor material (16), for example silicon, that has low noise photogate charge-mode readout circuitry (20, 21, 26, 28) (e.g., CCD or CMOS readout circuitry and structures) that is disposed upon a first surface (18) of the layer. A second, opposing surface of the layer is a radiation admitting surface of the layer. The layer has a bandgap selected for absorbing electromagnetic radiation having wavelengths shorter than about one micrometer and for generating charge carriers from the absorbed radiation. The generated charge carriers are collected by the photogate charge-mode readout circuitry. A thermal sensing element (22) is disposed above and is thermally isolated from the first surface of the layer. The thermal sensing element may be, by example, one of a bolometer element, a pyroelectric element, or a thermopile element. A layer (12) of narrower bandgap semiconductor material can also be employed with this invention, wherein the layer of narrower bandgap semiconductor material (such as InGaAs or HgCdTe) is atomically bonded to the second surface along a heterojunction interface that is continuous or apertured across the second surface. The bonded layer is used to absorb NIR and visible light.

Claims

1. An imaging device having a plurality of unit cells that contribute to forming an image of a scene, said imaging device comprising a layer of wide bandgap semiconductor material having photogate charge-mode readout circuitry disposed upon a first surface of said layer, a second, opposing surface of said layer being bonded at a heterojunction interface to a surface of a layer of narrower bandgap semiconductor material selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer and for generating charge carriers, the generated charge carriers being transported across said heterojunction interface for collection by said photogate charge-mode readout circuitry, and further comprising a thermal sensing element disposed above and thermally isolated from said first surface of said layer.

2. An imaging device as set forth in claim 1, wherein said layer of wide bandgap semiconductor material is comprised of silicon.

3. An imaging device as set forth in claim 1, wherein said layer of narrower bandgap semiconductor material is comprised of a Group III-V semiconductor material.

4. An imaging device as set forth in claim 1, wherein said layer of narrower bandgap semiconductor material is comprised of a Group II-VI semiconductor material.

5. An imaging device as set forth in claim 1, wherein said layer of narrower bandgap semiconductor material is comprised of a Group IV material or a Group IV-VI material.

6. An imaging device as set forth in claim 1, wherein said layer of narrower bandgap material is disposed upon a surface of a transparent substrate.

7. An imaging device as set forth in claim 1, and further comprising means for establishing an electric field at least through said first layer for facilitating the collection of said charge carriers by said photogate charge-mode readout circuitry.

8. An imaging device as set forth in claim 1, and further comprising means for establishing an electric field at least through said first layer for amplifying said charge carriers within said first layer by avalanche multiplication.

9. An imaging device as set forth in claim 1, and further comprising a plurality of thermal reflectors individual ones of which are disposed for concentrating incident thermal radiation onto said thermal sensing element.

10. An imaging device as set forth in claim 1, wherein said thermal sensing element is comprised of one of a bolometer element, a pyroelectric element, or a thermopile element.

11. An imaging device as set forth in claim 1, wherein said layer of narrower bandgap semiconductor material is continuous across said second surface.

12. An imaging device as set forth in claim 1, wherein said layer of narrower bandgap semiconductor material has a plurality of apertures formed therein in registration with selected ones of said unit cells for admitting electromagnetic radiation, having wavelengths less than about one micrometer, into said selected ones of said unit cells.

13. An imaging device as set forth in claim 1, wherein said photogate charge-mode readout circuitry is comprised of charged coupled device (CCD) readout circuitry.

14. An imaging device as set forth in claim 1, wherein said photogate charge-mode readout circuitry is comprised of complementary metal oxide semiconductor (CMOS) readout circuitry.

15. An imaging device having a plurality of unit cells that contribute to forming an image of a scene, said imaging device comprising a layer of semiconductor material having photogate charge-mode readout circuitry disposed upon a first surface of said layer, a second, opposing surface of said layer being a radiation admitting surface of said layer, said layer having a bandgap selected for absorbing electromagnetic radiation having wavelengths shorter than about one micrometer and for generating charge carriers, the generated charge carriers being collected by said photogate charge-mode readout circuitry, and further comprising a thermal sensing element disposed above and thermally isolated from said first surface of said layer.

16. An imaging device as set forth in claim 15, wherein said layer of semiconductor material is comprised of silicon.

17. An imaging device as set forth in claim 15, and further comprising means for establishing an electric field through said first layer for facilitating the collection of said charge carriers by said photogate charge-mode readout circuitry.

18. An imaging device as set forth in claim 15, and further comprising means for establishing an electric field at least through said first layer for amplifying said charge carriers within said first layer by avalanche multiplication.

19. An imaging device as set forth in claim 15, and further comprising a plurality of thermal reflectors individual ones of which are disposed for concentrating incident thermal radiation onto said thermal sensing element.

20. An imaging device as set forth in claim 15, wherein said thermal sensing element is comprised of one of a bolometer element, a pyroelectric element, or a thermopile element.

21. An imaging device as set forth in claim 15, and further comprising an array of microlenses that are disposed relative to said radiation admitting surface for focussing onto said layer electromagnetic radiation having wavelengths shorter than about one micrometer, and for focussing onto said thermal sensing element electromagnetic radiation having wavelengths longer than about one micrometer.

22. An imaging device as set forth in claim 15, wherein said photogate charge-mode readout circuitry is comprised of charged coupled device (CCD) readout circuitry.

23. An imaging device as set forth in claim 15, wherein said photogate charge-mode readout circuitry is comprised of complementary metal oxide semiconductor (CMOS) readout circuitry.

24. An imaging device as set forth in claim 15, and further comprising a layer of narrower bandgap semiconductor material that is atomically bonded to said second surface along a heterojunction interface that is continuous across said second surface.

25. An imaging device as set forth in claim 15, and further comprising a layer of narrower bandgap semiconductor material that is atomically bonded to said second surface along a heterojunction interface, said layer of narrower bandgap semiconductor material having a plurality of apertures formed therein in registration with selected ones of said unit cells for admitting electromagnetic radiation, having wavelengths less than about one micrometer, into said selected ones of said unit cells.

26. An imaging device as set forth in claim 25, and further comprising means for subtracting an electrical signal generated by the selected ones of the unit cells from electrical signals generated by adjacent, non-selected ones of the unit cells.

27. An imaging device having a plurality of unit cells that contribute to forming an image of a scene, said imaging device comprising a layer of wide bandgap semiconductor material having readout circuitry employing a photodiode for charge collection, said readout circuitry being disposed upon a first surface of said layer, a second, opposing surface of said layer being bonded at a heterojunction interface to a surface of a layer of narrower bandgap semiconductor material selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer and for generating charge carriers, the generated charge carriers being transported across said heterojunction interface for collection by said photodiode readout circuitry, and further comprising a thermal sensing element disposed above and thermally isolated from said first surface of said layer.

28. An imaging device having a plurality of unit cells that contribute to forming an image of a scene, said imaging device comprising a layer of semiconductor material having readout circuitry employing a photodiode for charge collection, said readout circuitry being disposed upon a first surface of said layer, a second, opposing surface of said layer being a radiation admitting surface of said layer, said layer having a bandgap selected for absorbing electromagnetic radiation having wavelengths shorter than about one micrometer and for generating charge carriers, the generated charge carriers being collected by said photodiode readout circuitry, and further comprising a thermal sensing element disposed above and thermally isolated from said first surface of said layer.

29. A monolithic mid wave IR (MWIR) or long wave IR (LWIR)/visible/NIR sensor array, comprising:

a substrate having an atomically bonded, narrower bandgap layer on a first, radiation-receiving surface; and

a plurality of detector sites disposed on a second, opposite surface of said substrate, each of said sites comprising,

readout circuitry;

a MWIR or LWIR-responsive detector disposed over said second surface of said substrate; and

a plurality of visible/NIR detectors corresponding to each detector site, said plurality of visible/NIR detectors being interposed between said MWIR or LWIR-responsive detector and said second surface.