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Insulated gate transistor drive circuit

  • US 5,808,504 A
  • Filed: 08/14/1996
  • Issued: 09/15/1998
  • Est. Priority Date: 08/25/1995
  • Status: Expired due to Fees
First Claim
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1. An insulated gate transistor drive circuit comprising:

  • operation-state detecting means including;

    a sensor for detecting a collector current of an insulated gate transistor and producing a first output signal indicative of the collector current;

    a differentiating circuit coupled to the sensor to produce a second output signal indicative of a rate of change of the collector current; and

    operational parameter adjusting means coupled to the operation-state detecting means for adjusting an operational parameter of the insulated gate transistor after a source voltage applied to a gate of the insulated gate transistor is removed and the collector current of the insulated gate transistor is decreasing, in response to the second output signal.

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