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Method for characterizing defects on semiconductor wafers

  • US 5,808,735 A
  • Filed: 11/26/1996
  • Issued: 09/15/1998
  • Est. Priority Date: 06/17/1993
  • Status: Expired due to Term
First Claim
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1. A method comprising:

  • representing a three-dimensional surface, using a Cartesian coordinate system having x, y, and z axes, as a plurality of points on the surface, wherein each point is defined by an intensity value, a unique x-y coordinate, and a z coordinate specified by a z value;

    collecting a first group of the points having similar z values, the first group representing a first layer of the surface;

    collecting a second group of the points, each point of the second group having a z value similar to the z values of other points of the second group and dissimilar to the z values of the points of the first group, the second group representing a second layer of the surface;

    determining a first error threshold for the intensity values of the first group of points; and

    determining a second error threshold for the intensity values of the second group of points.

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