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Nitrogenated trench liner for improved shallow trench isolation

  • US 5,811,347 A
  • Filed: 04/29/1996
  • Issued: 09/22/1998
  • Est. Priority Date: 04/29/1996
  • Status: Expired due to Term
First Claim
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1. A method for forming an improved isolation trench comprising:

  • forming a pad layer on a silicon substrate;

    depositing a silicon nitride layer on said pad layer;

    patterning a photoresist layer on said silicon nitride layer such that regions of said nitride layer are exposed;

    removing said exposed regions of said nitride layer and said pad layer situated below said exposed regions of said nitride layer to expose regions of said silicon substrate;

    etching trenches into said exposed regions of said silicon substrate, wherein said trenches comprise sidewalls and a trench floor;

    implanting nitrogen into said sidewalls and said trench floor;

    filling said trench with a dielectric;

    planarizing said dielectric such that an upper surface of said dielectric is substantially coplanar with an upper surface of said nitride layer; and

    removing said nitride layer.

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