Dual-band multi-level microbridge detector
First Claim
1. A dual-band detector, comprising:
- a semiconductor substrate including a detector device that absorbs incident radiation in a first and of wavelengths of incident radiation; and
a microbridge detector level including a sensing element that absorbs incident radiation in second band of wavelengths of the incident radiation; and
means for coupling a detected signal, in response to the absorbed incident radiation in the second band of wavelengths, from the sensing element to the semiconductor substrate.
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Abstract
A dual-band detector that absorbs incident radiation in a first range of wavelengths and that absorbs incident radiation in a second range of wavelengths. The dual-band detector includes a semiconductor substrate and a first microbridge detector level disposed above the semiconductor substrate. The first microbridge detector level includes an active area that absorbs incident radiation in one of the first range of wavelengths and the second range of wavelengths. In one embodiment, the semiconductor substrate includes a detector that detects incident radiation in the other of the first and second range of wavelengths. In another embodiment, the dual-band microbridge detector also includes a second microbridge detector level. The second microbridge detector level also includes an active area that absorbs incident radiation in an alternative one of the first range of wavelengths and the second range or wavelengths. With this apparatus, the dual-band detector can operate in a first range of wavelengths and also in a second range of wavelengths. In addition, this apparatus can be fabricated using existing processing techniques.
78 Citations
31 Claims
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1. A dual-band detector, comprising:
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a semiconductor substrate including a detector device that absorbs incident radiation in a first and of wavelengths of incident radiation; and a microbridge detector level including a sensing element that absorbs incident radiation in second band of wavelengths of the incident radiation; and means for coupling a detected signal, in response to the absorbed incident radiation in the second band of wavelengths, from the sensing element to the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A dual-band detector, comprising:
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a semiconductor substrate; a first microbridge detector disposed above the semiconductor substrate, the first microbridge detector including a first sensing element that absorbs incident radiation in a first range of wavelengths of incident radiation; a second microbridge detector disposed above the semiconductor substrate, the second microbridge detector including a second sensing element that absorbs incident energy in a second range of wavelengths of the incident radiation; a first means for coupling a first detected signal from the first sensing element, in response to the incident radiation in the first range of wavelengths, to the semiconductor substrate; and a second means for coupling a second detected signal from the second sensing element, in response to incident radiation in the second range of wavelengths, to the semiconductor substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification