Semiconductor device structure
First Claim
1. In a resin molded lead frame semiconductor device including a resin molded structure having a metal lead frame and an LSI chip, the improvement comprising said metal lead frame and an electrode on said LSI chip being metallurgically directly connected with each other, an overall thickness of said lead frame is thin, a part of said lead frame is structured as a reinforcing member for preventing a warp of said LSI chip, an outer periphery of said structure is resin molded, and a resin portion which covers a mirror surface side on which a circuit of said LSI chip is not formed is a grinded surface so that an overall thickness of said semiconductor device is reduced.
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Accused Products
Abstract
An ultra-thin resin molded semiconductor device of high reliability with low cost and with easy repair at time of mounting. A plurality of these semiconductor devices are stacked to provide a semiconductor module which has a higher function than semiconductor devices in the same volume, and a card type module utilizing assembled by the stacked semiconductor module is provided. In manufacturing the semiconductor module, an extremely thin lead frame and an LSI chip are directly connected together, and the mirror surface of the LSI chip is exposed by using a low viscosity epoxy resin to have a thin molding. The mirror surface is grinded to have a further thin thickness of the whole structure of the semiconductor device. A part of the lead frame is formed as a reinforcing member, a heat radiation path, a light shielding part for shielding the LSI from harmful light beams, or a positioning base for mounting a substrate. The above ultra-thin resin molded semiconductor devices are interconnected together in a stacked layout to provide a stacked semiconductor module, and to provide a card type device having a higher function.
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Citations
26 Claims
- 1. In a resin molded lead frame semiconductor device including a resin molded structure having a metal lead frame and an LSI chip, the improvement comprising said metal lead frame and an electrode on said LSI chip being metallurgically directly connected with each other, an overall thickness of said lead frame is thin, a part of said lead frame is structured as a reinforcing member for preventing a warp of said LSI chip, an outer periphery of said structure is resin molded, and a resin portion which covers a mirror surface side on which a circuit of said LSI chip is not formed is a grinded surface so that an overall thickness of said semiconductor device is reduced.
- 2. A resin molded lead frame semiconductor device comprising a structure having a metal lead frame and an electrode on an LSI chip connected with each other, wherein said lead frame of said resin molded semiconductor device has a plurality of leads and a reinforcing member for preventing a warp of said LSI chip of said resin molded semiconductor device, said leads are cut off from said reinforcing member so as not to be electrically connected with each other, and said leads are electrically connected with said electrode on said LSI chin.
- 3. A resin molded lead frame semiconductor device comprising a structure having a metal lead frame and an electrode on an LSI chip connected with each other, said lead frame of said resin molded semiconductor device has a plurality of leads and a reinforcing member for preventing a warp of said LSI chip of said resin molded semiconductor device, said leads are cut off from said reinforcing member so as not to be electrically connected with each other, said leads are electrically connected with said electrode on said LSI chip, and an outer periphery of the structure is resin molded such that the rear surface of said LSI chip of said resin molded semiconductor device is exposed.
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9. A method of forming a resin molded semiconductor device comprising the steps of:
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utilizing a thin film lead frame; metallurgically connecting an electrode on said lead frame with an electrode on an LSI chips, said electrode on said lead frame being connected with a reinforcing portion of said LSI chip; plating a predetermined part of said lead frame including said electrode; and after finishing said plating, separating said electrode from said reinforcing portion of said LSI chip so that said electrode is electrically isolated from other portions of said reinforcing portion of said LSI chip.
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- 10. A stacked semiconductor module using a lead frame, in which in mounting at least two resin molded semiconductor devices in a stacked structure, each resin molded semiconductor device having an upper surface and a lower surface, an electrode to be led from said resin molded semiconductor device is at first linearly drawn from said resin molded semiconductor device to form a first linear portion extending in a first direction away from said resin molded semiconductor device, next said electrode is once bent in a direction away from the device and in an upper surface direction, and then a second linear portion is provided in the same direction as the first linear portion, and thereafter said electrode portion is bent to form a connection portion in a direction away from said resin molded semiconductor device and in a lower surface direction where a substrate or a similar type of semiconductor device is disposed, said resin molded semiconductor devices being connected with each other by each said connection portion.
- 16. In a resin molded lead frame semiconductor device having a metal lead frame and an LSI chip in a molded resin, the improvement comprising a lead of the metal lead frame is electrically connected to an electrode on the LSI chip by a bump so as to provide a semiconductor device of reduced thickness, wherein said metal lead frame has a plurality of leads and a reinforcing member for preventing a warp of said LSI chip, said leads being cut off from said reinforcing member so as not to be electrically connected with each other.
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26. In a resin molded lead frame semiconductor device having a metal lead frame and an LSI chip in a molded resin, the improvement comprising a lead of the metal lead frame is electrically connected to an electrode on the LSI chip by a bump so as to provide a semiconductor device of reduced thickness, wherein the metal lead frame and the LSI chip are resin molded to a surface of the device on which a circuit of the LSI chip is not formed and the resin adjacent the surface is a processed surface.
Specification