Semiconductor device structure

• US 5,811,877 A
• Filed: 03/31/1997
• Issued: 09/22/1998
• Est. Priority Date: 08/30/1994
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Orihashi, Ritsuro, Kawai, Sueo, Kanda, Naoya, Masuda, Masachika, Matsumoto, Kunio, Tsunoda, Shigeharu, Yoshida, Isamu, Yamakura, Hideo, Saeki, Junichi, Kawai, Michifumi, Yoshida, Tooru, Kawaguchi, Ikuo, Miyano, Ichiro
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US08/829,144
• Time in Patent Office: 540 Days
• Field of Search: 257/706, 257/707, 257/675, 257/669, 257/717, 257/719, 257/720, 257/721, 257/722, 257/723, 257/696, 257/689, 257/686, 257/666, 257/685, 257/693, 257/692
• US Class Current: 257/706
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/32014 the layer connector being smaller than the bonding area, e.g. bond pad
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/4826 Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73215 Layer and wire connectors
• CPC Class Codes: H01L 2225/1029 the support being a lead frame
• CPC Class Codes: H01L 2225/1058 Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/4951 Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/105 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01055 : Cesium [Cs]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

An ultra-thin resin molded semiconductor device of high reliability with low cost and with easy repair at time of mounting. A plurality of these semiconductor devices are stacked to provide a semiconductor module which has a higher function than semiconductor devices in the same volume, and a card type module utilizing assembled by the stacked semiconductor module is provided. In manufacturing the semiconductor module, an extremely thin lead frame and an LSI chip are directly connected together, and the mirror surface of the LSI chip is exposed by using a low viscosity epoxy resin to have a thin molding. The mirror surface is grinded to have a further thin thickness of the whole structure of the semiconductor device. A part of the lead frame is formed as a reinforcing member, a heat radiation path, a light shielding part for shielding the LSI from harmful light beams, or a positioning base for mounting a substrate. The above ultra-thin resin molded semiconductor devices are interconnected together in a stacked layout to provide a stacked semiconductor module, and to provide a card type device having a higher function.

Claims

1. In a resin molded lead frame semiconductor device including a resin molded structure having a metal lead frame and an LSI chip, the improvement comprising said metal lead frame and an electrode on said LSI chip being metallurgically directly connected with each other, an overall thickness of said lead frame is thin, a part of said lead frame is structured as a reinforcing member for preventing a warp of said LSI chip, an outer periphery of said structure is resin molded, and a resin portion which covers a mirror surface side on which a circuit of said LSI chip is not formed is a grinded surface so that an overall thickness of said semiconductor device is reduced.

23. In a resin molded lead frame semiconductor device according to claim 1, wherein said leads are disposed on a peripheral area of said LSI chip, said reinforcing member is disposed on a center of said LSI chip via a resin mold portion.

24. In a resin molded lead frame semiconductor device according to claim 1, wherein said leads and said reinforcing member are disposed to be substantially the same length from said LSI chip.

25. In a resin molded lead frame semiconductor device according to claim 1, wherein said metal lead frame and said electrode on said LSI chip are metallurgically directly connected to a bump.

2. A resin molded lead frame semiconductor device comprising a structure having a metal lead frame and an electrode on an LSI chip connected with each other, wherein said lead frame of said resin molded semiconductor device has a plurality of leads and a reinforcing member for preventing a warp of said LSI chip of said resin molded semiconductor device, said leads are cut off from said reinforcing member so as not to be electrically connected with each other, and said leads are electrically connected with said electrode on said LSI chin.

4. A resin molded lead frame semiconductor according to claim 2, wherein a part of said lead frame is set to have a composite function as one as a heat radiation fin and a heat transfer unit for heat generated from said LSI chip, and an outer periphery of said structure is resin molded such that said heat radiation portion is exposed.

5. A resin molded lead frame semiconductor device according to claim 2, wherein a part of said lead frame is set to have a composite function as a light shielding portion for shielding said LSI chip from an irradiation of light beams such as ultra-violet rays which cause a malfunction of said LSI chip, and an outer periphery of said structure is resin molded.

6. A resin molded lead frame semiconductor device according to claim 2, wherein said heat radiation member serves as a heat radiation fin to radiate heat from said LSI chip and is mounted so as to be exposed outside of said molded resin.

7. A composite functional semiconductor module having at least two resin molded semiconductor devices according to claim 2 laid out in a stacked structure, wherein electrode of said respective semiconductor devices are electrically connected to form a functional circuit.

8. A composite functional semiconductor module according to claim 7, wherein a semiconductor type display mark is provided to each of said stacked semiconductor devices to identify a belonging of each semiconductor device to each layer.

11. A card type functional module which is assembled by using a stacked semiconductor module according to claim 7 and functional circuit structure parts other than said stacked semiconductor module.

14. A resin molded semiconductor device according to claim 2, wherein said metal lead frame and said LSI chip are metallurgically directly connected by at least one bump.

15. A resin molded lead frame semiconductor device according to claim 2, further comprising disrupted portions interrupting electrical connection between said leads and said reinforcing member.

19. A resin molded lead frame semiconductor device according to claim 2, wherein said leads are disposed on a peripheral area of said LSI chip, said reinforcing member is disposed on a center of said LSI chip via a resin mold portion.

20. A resin molded lead frame semiconductor device according to claim 2, wherein said leads and said reinforcing members are disposed to be substantially the same length from said LSI chip.

3. A resin molded lead frame semiconductor device comprising a structure having a metal lead frame and an electrode on an LSI chip connected with each other, said lead frame of said resin molded semiconductor device has a plurality of leads and a reinforcing member for preventing a warp of said LSI chip of said resin molded semiconductor device, said leads are cut off from said reinforcing member so as not to be electrically connected with each other, said leads are electrically connected with said electrode on said LSI chip, and an outer periphery of the structure is resin molded such that the rear surface of said LSI chip of said resin molded semiconductor device is exposed.

21. A resin molded lead frame semiconductor device according to claim 3, wherein said leads are disposed on a peripheral area of said LSI chip, said reinforcing member is disposed on a center of said LSI chip via a resin mold portion.

22. A resin molded lead frame semiconductor device according to claim 3, wherein said leads and said reinforcing member are disposed to be substantially the same length from said LSI chip.

9. A method of forming a resin molded semiconductor device comprising the steps of:

utilizing a thin film lead frame;

metallurgically connecting an electrode on said lead frame with an electrode on an LSI chips, said electrode on said lead frame being connected with a reinforcing portion of said LSI chip;

plating a predetermined part of said lead frame including said electrode; and

after finishing said plating, separating said electrode from said reinforcing portion of said LSI chip so that said electrode is electrically isolated from other portions of said reinforcing portion of said LSI chip.

10. A stacked semiconductor module using a lead frame, in which in mounting at least two resin molded semiconductor devices in a stacked structure, each resin molded semiconductor device having an upper surface and a lower surface, an electrode to be led from said resin molded semiconductor device is at first linearly drawn from said resin molded semiconductor device to form a first linear portion extending in a first direction away from said resin molded semiconductor device, next said electrode is once bent in a direction away from the device and in an upper surface direction, and then a second linear portion is provided in the same direction as the first linear portion, and thereafter said electrode portion is bent to form a connection portion in a direction away from said resin molded semiconductor device and in a lower surface direction where a substrate or a similar type of semiconductor device is disposed, said resin molded semiconductor devices being connected with each other by each said connection portion.

12. A card type memory module which is assembled by mounting a memory LSI on a stacked semiconductor module according to claim 10 and by further using functional circuit structure parts other than said stacked semiconductor module.

13. A card type memory module which is assembled by using a resin molded semiconductor device according to claim 10 and functional circuit structure parts other than said semiconductor device.

16. In a resin molded lead frame semiconductor device having a metal lead frame and an LSI chip in a molded resin, the improvement comprising a lead of the metal lead frame is electrically connected to an electrode on the LSI chip by a bump so as to provide a semiconductor device of reduced thickness, wherein said metal lead frame has a plurality of leads and a reinforcing member for preventing a warp of said LSI chip, said leads being cut off from said reinforcing member so as not to be electrically connected with each other.

17. In a resin molded lead frame semiconductor device according to claim 16, wherein said leads are disposed on a peripheral area of said LSI chip, said reinforcing member is disposed on a center of said LSI chip via a resin mold portion.

18. In a resin molded lead frame semiconductor device according to claim 17, wherein said leads and said reinforcing member are disposed to be substantially the same length from said LSI chip.

26. In a resin molded lead frame semiconductor device having a metal lead frame and an LSI chip in a molded resin, the improvement comprising a lead of the metal lead frame is electrically connected to an electrode on the LSI chip by a bump so as to provide a semiconductor device of reduced thickness, wherein the metal lead frame and the LSI chip are resin molded to a surface of the device on which a circuit of the LSI chip is not formed and the resin adjacent the surface is a processed surface.