Methods and apparatus for cleaning surfaces in a substrate processing system
First Claim
1. A substrate processing system comprising:
- a processing chamber, said processing chamber including interior walls and a ceramic liner, said ceramic liner lining at least a portion of said interior walls;
a vacuum system configured to maintain a selected pressure between about 10-760 torr within said processing chamber;
a gas delivery system configured to deliver selected reactive gases to said processing chamber, said gas delivery system including a deposition supply system and a dual input box having a first input and a second input, said gas delivery system configured to introduce said selected reactive gases into said processing chamber via a selected input of said dual input box at a selected time, and said deposition supply system configured to deliver first reactive gases from said first input to said processing chamber when said first input is selected and to deliver a reactive species from said second input to said processing chamber when said second input is selected;
a remote microwave plasma system configured to produce and deliver said reactive species from said second input to said processing chamber, said reactive species produced from a plasma created from cleaning gases decomposed by microwaves;
a heating system, said heating system including a heater having a ceramic exterior, said heater for holding a substrate and capable of heating up to at least about 500°
C.;
a controller configured to control said gas delivery system, said remote microwave plasma system, said heating system, and said vacuum system; and
a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said substrate processing system, wherein said computer-readable program includes;
a first set of computer instructions for controlling said gas delivery system to introduce said cleaning gases to said remote microwave plasma system during a first time period to deliver said reactive species into said processing chamber to clean the processing chamber.
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Accused Products
Abstract
The present invention provides a method for cleaning a processing chamber. According to a specific embodiment, the method includes steps of depositing a dielectric film on a wafer on a ceramic heater in the processing chamber in a first time period, with the ceramic heater heated to a first temperature of at least about 500° C. during the deposition step; and introducing reactive species into the processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, with the ceramic heater heated to a second temperature of at least about 500° C. during the introducing step. The method also includes cleaning surfaces in the processing chamber, with cleaning performed by the reactive species. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.
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Citations
20 Claims
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1. A substrate processing system comprising:
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a processing chamber, said processing chamber including interior walls and a ceramic liner, said ceramic liner lining at least a portion of said interior walls; a vacuum system configured to maintain a selected pressure between about 10-760 torr within said processing chamber; a gas delivery system configured to deliver selected reactive gases to said processing chamber, said gas delivery system including a deposition supply system and a dual input box having a first input and a second input, said gas delivery system configured to introduce said selected reactive gases into said processing chamber via a selected input of said dual input box at a selected time, and said deposition supply system configured to deliver first reactive gases from said first input to said processing chamber when said first input is selected and to deliver a reactive species from said second input to said processing chamber when said second input is selected; a remote microwave plasma system configured to produce and deliver said reactive species from said second input to said processing chamber, said reactive species produced from a plasma created from cleaning gases decomposed by microwaves; a heating system, said heating system including a heater having a ceramic exterior, said heater for holding a substrate and capable of heating up to at least about 500°
C.;a controller configured to control said gas delivery system, said remote microwave plasma system, said heating system, and said vacuum system; and a memory, coupled to said controller, comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said substrate processing system, wherein said computer-readable program includes; a first set of computer instructions for controlling said gas delivery system to introduce said cleaning gases to said remote microwave plasma system during a first time period to deliver said reactive species into said processing chamber to clean the processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for cleaning a processing chamber, said method comprising:
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depositing a dielectric film on a wafer on a ceramic heater in said processing chamber in a first time period, said ceramic heater heated to a first temperature of at least about 500°
C. during said deposition step;introducing reactive species into said processing chamber from a clean gas that is input to a remote microwave plasma system during a second time period, said ceramic heater heated to a second temperature of at least about 500°
C. during said introducing step; andcleaning surfaces in said processing chamber, said cleaning performed by said reactive species. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification