Semiconductor device, production method thereof, and tape carrier for semiconductor device used for producing the semiconductor device

• US 5,814,894 A
• Filed: 04/04/1996
• Issued: 09/29/1998
• Est. Priority Date: 04/07/1995
• Status: Expired due to Fees

• Current Assignee: Nitto Denko Corporation
• Original Assignee: Nitto Denko Corporation
• Inventors: Okawa, Tadao, Igarashi, Kazumasa, Usui, Hideyuki, Ito, Hisataka, Nagasawa, Megumu, Tanigawa, Satoshi, Yoshio, Nobuhiko
• Primary Examiner(s): OSTROWSKI, DAVID M
• Application Number:
  US08/627,996
• Time in Patent Office: 908 Days
• Field of Search: 257/787, 257/792, 257/738, 257/778, 257/791, 528/310, 528/318
• US Class Current: 257/787
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49816 Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/15174 in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA

Abstract

A semiconductor device capable of preventing the occurrence of defect of electroconductivity, wherein a semiconductor chip 1 equipped with electrodes 11 is mounted on an auxiliary wiring plate 2 in the state of facing the surface of the electrode 11 side, leading conductors 23 are disposed in the inside of the auxiliary wiring plate 2, one end of each leading conductor 23 forms an internal electrode 21 projecting from the surface of the auxiliary wiring plate 2 at the side of mounting the semiconductor chip 1, the other end of the leading conductor 23 forms an external electrode 22 projecting from the surface of the auxiliary wiring plate opposite to the side of mounting the semiconductor chip 1, and each of the internal electrodes 21 is connected to each of the electrodes 11 of the semiconductor chip 1, at least a gap between the semiconductor chip 1 and the auxiliary wiring plate 2 is encapsulated with a heat-welding polyimide resin layer.

Claims

1. A semiconductor device, wherein a semiconductor chip equipped with at least one electrode is mounted on an auxiliary wiring plate, wherein the auxiliary wiring plate has a surface to which the semiconductor chip is mounted such that the electrode side of the semiconductor chip faces the surface of the auxiliary wiring plate, at least one leading conductor is disposed in the inside of said auxiliary wiring plate, one end of the leading conductor forms an internal electrode projecting from the surface of said auxiliary wiring plate at the semiconductor chip-mounting side, the other end of the leading conductor forms an external electrode projecting from the surface of said auxiliary wiring plate at the opposite side to said semiconductor chip-mounting side, and said internal electrode is connected to the electrode of the semiconductor chip, at least a gap between the semiconductor chip and the auxiliary wiring plate being encapsulated with a heat-welding polyimide resin layer, wherein said heat-welding polyimide resin layer is formed by at least one of the heat-welding polyimides represented by the following formulae (1) to (5);

##STR31## wherein in the above formulae (1) to (5), R₁ represents ##STR32## R₂ represents --C₃ H₆ --, --C₄ H₈ --, or ##STR33## R₃ represents an aromatic silicon-free diamine residue;

Ar represents an aromatic tetracarboxylic acid residue;

n represents an integer of from 1 to 100;

a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦

a/(a+b)≦

1.00; and

the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer.

2. The semiconductor device of claim 1, wherein said heat-welding polyimide resin layer has a primer layer at the side of being brought into contact with said auxiliary wiring plate and the heat-welding polyimide resin layer is contacted with the auxiliary wiring plate via the primer layer.

3. The semiconductor device of claim 1, wherein said heat-welding polyimide resin layer is formed by a heat-welding polyimide having a glass transition temperature of 300°

C. or less.

4. The semiconductor device of claim 1, wherein in the formulae (1) to (5), a and b are numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦

a/(a+b)≦

0.99.

7. The semiconductor device of claim 1 or 5, wherein the surface layer of said auxiliary wiring plate at the side of mounting the semiconductor chip is formed by a polyimide.

8. The semiconductor device of claim 1 or 5, wherein the external electrodes of said auxiliary wiring plate are formed on the surface of said auxiliary wiring plate at the opposite side to the side of mounting the semiconductor chip corresponding to the portion almost just under said internal electrodes.

9. The semiconductor device of claim 1 or 5, wherein the external electrodes of said auxiliary wiring plate are formed on the surface of said auxiliary wiring plate at the opposite side to the side of mounting the semiconductor chip at a portion deviated from the portion almost just under said internal electrodes.

10. The semiconductor device of claim 1 or 5, wherein said auxiliary wiring plate has a multilayer structure composed of a plurality of insulating layers laminated in the thickness direction.

11. The semiconductor device of claim 1 or 5, wherein the area of the surface of said auxiliary wiring plate at the side of mounting the semiconductor chip is 200% or less of the bottom surface of said semiconductor chip.

12. The semiconductor device of claim 1 or 5, wherein the area of said auxiliary wiring plate at the side of mounting the semiconductor chip is the same area as the area of the bottom surface of said semiconductor chip.

13. The semiconductor device of claim 1 or 5, wherein in the surface of said auxiliary wiring plate at the side of mounting the semiconductor chip, the surface tension of at least the portion thereof to be contacted with the heat-welding polyimide resin layer is 35 mJ/m² or higher.

14. The semiconductor device of claim 1 or 5, wherein in the surface of said auxiliary wiring plate at the side of mounting the semiconductor chip, at least the portion thereof of being brought into contact with the heat-welding polyimide resin layer has an uneven surface having a diameter of from 0.005 to 0.5 μ

m.

5. A semiconductor device, wherein a semiconductor chip equipped with at least one electrode is mounted on an auxiliary wiring plate, wherein the auxiliary wiring plate has a surface to which the semiconductor chip is mounted such that the electrode side of the semiconductor chip faces the surface of the auxiliary wiring plate, at least one leading conductor is disposed in the inside of said auxiliary wiring plate, one end of the leading conductor forms an internal electrode projecting from the surface of said auxiliary wiring plate at the semiconductor chip-mounting side, the other end of the leading conductor forms an external electrode projecting from the surface of said auxiliary wiring plate at the opposite side to said semiconductor chip-mounting side, and said internal electrode is connected to the electrode of the semiconductor chip, at least a gap between the semiconductor chip and the auxiliary wiring plate being encapsulated with a heat-welding polyimide resin layer, wherein said heat-welding polyimide resin layer has a primer layer at the side of being brought into contact with said auxiliary wiring plate and the heat-welding polyimide resin layer is contacted with the auxiliary wiring plate via the primer layer, wherein said primer layer is formed from at least one of the heat-welding polyimides represented by the following formulae (6) to (8);

##STR34## wherein in the formulae (6) to (8), R₄ represents ##STR35## R₂ represents --C₃ H₆ --, --C₄ H₈ --, or ##STR36## ;

R₃ represents an aromatic silicon-free diamine residue;

Ar represents an aromatic tetracarboxylic acid residue;

n represents an integer of from 1 to 100;

c and d represent numbers satisfying the relationship of c+d=1 and the relationship of 0.3≦

c/(c+d)≦

1.00; and

the polyimide of formulae (6) to (8) may be a random copolymer or a block copolymer.

6. The semiconductor device of claim 5, wherein in the formulae (6) to (8), c and d are numbers satisfying the relationship of c+d=1 and the relationship of 0.3≦

c/(c+d)≦

0.99.

15. A tape carrier for semiconductor device, wherein at least one leading conductor is disposed in the inside of a high-molecular weight film, one end of the leading conductor forms an internal electrode projecting from the surface of said high-molecular weight film, the other end of said leading conductor forms an external electrode projecting from the back surface of said high-molecular weight film, and the surface of said high-molecular weight film including the surface of said internal electrode is covered with a heat-welding polyimide film formed by at least one of heat-welding polyimides each represented by the following formulae (1) to (5);

##STR37## In the formulae (1) to (5), R₁ represents ##STR38## R₂ represents --C₃ H₆ --;

--C₄ H₈ --;

or ##STR39## R₃ represents an aromatic silicon-free diamine residue;

Ar represents an aromatic tetracarboxylic acid residue;

n represents an integer of from 1 to 100;

a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦

a/(a+b)≦

1.00; and

the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer.

16. The tape carrier for semiconductor device of claim 15, wherein in the formulae (1) to (5), a and b are numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦

a/(a+b)≦

0.99.

17. The tape carrier for semiconductor device of claim 15, wherein the surface layer of said high-molecular weight film is formed by a polyimide.

18. The tape carrier for semiconductor device of claim 15, wherein the external electrodes are formed on the back surface of said high-molecular weight film at a position corresponding to the portion almost just under said internal electrodes.

19. The tape carrier for semiconductor device of claim 15, wherein the external electrodes of said auxiliary wiring plate are formed at a portion deviated from the portion of the back surface of said high-molecular weight film corresponding to the portion almost just under said internal electrodes.

20. The tape carrier for semiconductor device of claim 15, wherein said high-molecular weight film has a multilayer structure composed of the laminated layers of a plurality of high-molecular weight films.

21. The tape carrier for semiconductor device of claim 15, wherein the area of the surface of the tape carrier for semiconductor device at the side of mounting the semiconductor chip is 200% or less of the bottom area of the semiconductor chip.

22. The tape carrier for semiconductor device of claim 15, wherein the area of the surface of the tape carrier for semiconductor device at the side of mounting the semiconductor chip is the same area as the bottom area of the semiconductor chip.

23. The tape carrier for semiconductor device of claim 15, wherein an insulating layer is formed on the back surface of the high-molecular weight film excluding the exposed surfaces of said external electrodes.

24. The tape carrier for semiconductor device of claim 15, wherein said insulating layer is formed by a polyimide.

27. The tape carrier for semiconductor device of claim 15, 16, 26 or 25, wherein said heat-welding polyimide film has a primer layer at the side of facing said high-molecular weight film and the primer layer is formed at least one of the polyimides represented by the following formulae (6) to (8). ##STR43## In the formulae (6) to (8), R₄ represents ##STR44## R₂ represents --C₃ H₆ --, --C₄ H₈ --, or ##STR45## R₃ represents an aromatic silicon-free diamine residue;

Ar represents an aromatic tetracarboxylic acid residue;

n represents an integer of from 1 to 100;

c and d represent numbers satisfying the relationship of c+d=1 and the relationship of 0.3≦

c/(c+d)≦

1.00; and

the polyimide of formula (6) to (8) may be a random copolymer or a block copolymer.

28. The tape carrier for semiconductor device of claim 27, wherein in the formulae (6) to (8), c and d are numbers satisfying the relationship of c+d=1 and the relationship of 0.3≦

c/(c+d)≦

0.99.

25. A tape carrier for semiconductor device, wherein at least one leading conductor is disposed in the inside of a high molecular weight film, one end of the leading conductor forms an internal electrode projecting from the surface of said high-molecular weight film, the other end of said leading conductor forms an external electrode projecting from the back surface of said high-molecular weight film, the surface of said internal electrode is covered with a heat-welding polyimide film formed from one of heat-welding polyimides each represented by the following formulae (1) to (5), and said internal electrode projects from the surface of said heat-welding polyimide film;

##STR40## wherein in the formulae (1) to (5), R₁ represents ##STR41## R₂ represents --C₃ H₆ --, --C₄ H₈ --, or ##STR42## R₃ represents an aromatic silicon-free diamine residue;

Ar represents an aromatic tetracarboxylic acid residue;

n represents an integer of from 1 to 100;

a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦

a/(a+b)≦

1.00; and

the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer.

26. The tape carrier for semiconductor device of claim 25, wherein in the formulae (1) to (5), a and b are numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦

a/(a+b)≦

0.99.