Semiconductor device, production method thereof, and tape carrier for semiconductor device used for producing the semiconductor device
First Claim
1. A semiconductor device, wherein a semiconductor chip equipped with at least one electrode is mounted on an auxiliary wiring plate, wherein the auxiliary wiring plate has a surface to which the semiconductor chip is mounted such that the electrode side of the semiconductor chip faces the surface of the auxiliary wiring plate, at least one leading conductor is disposed in the inside of said auxiliary wiring plate, one end of the leading conductor forms an internal electrode projecting from the surface of said auxiliary wiring plate at the semiconductor chip-mounting side, the other end of the leading conductor forms an external electrode projecting from the surface of said auxiliary wiring plate at the opposite side to said semiconductor chip-mounting side, and said internal electrode is connected to the electrode of the semiconductor chip, at least a gap between the semiconductor chip and the auxiliary wiring plate being encapsulated with a heat-welding polyimide resin layer, wherein said heat-welding polyimide resin layer is formed by at least one of the heat-welding polyimides represented by the following formulae (1) to (5);
- ##STR31## wherein in the above formulae (1) to (5), R1 represents ##STR32## R2 represents --C3 H6 --, --C4 H8 --, or ##STR33## R3 represents an aromatic silicon-free diamine residue;
Ar represents an aromatic tetracarboxylic acid residue;
n represents an integer of from 1 to 100;
a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦
a/(a+b)≦
1.00; and
the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer.
1 Assignment
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Accused Products
Abstract
A semiconductor device capable of preventing the occurrence of defect of electroconductivity, wherein a semiconductor chip 1 equipped with electrodes 11 is mounted on an auxiliary wiring plate 2 in the state of facing the surface of the electrode 11 side, leading conductors 23 are disposed in the inside of the auxiliary wiring plate 2, one end of each leading conductor 23 forms an internal electrode 21 projecting from the surface of the auxiliary wiring plate 2 at the side of mounting the semiconductor chip 1, the other end of the leading conductor 23 forms an external electrode 22 projecting from the surface of the auxiliary wiring plate opposite to the side of mounting the semiconductor chip 1, and each of the internal electrodes 21 is connected to each of the electrodes 11 of the semiconductor chip 1, at least a gap between the semiconductor chip 1 and the auxiliary wiring plate 2 is encapsulated with a heat-welding polyimide resin layer.
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Citations
28 Claims
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1. A semiconductor device, wherein a semiconductor chip equipped with at least one electrode is mounted on an auxiliary wiring plate, wherein the auxiliary wiring plate has a surface to which the semiconductor chip is mounted such that the electrode side of the semiconductor chip faces the surface of the auxiliary wiring plate, at least one leading conductor is disposed in the inside of said auxiliary wiring plate, one end of the leading conductor forms an internal electrode projecting from the surface of said auxiliary wiring plate at the semiconductor chip-mounting side, the other end of the leading conductor forms an external electrode projecting from the surface of said auxiliary wiring plate at the opposite side to said semiconductor chip-mounting side, and said internal electrode is connected to the electrode of the semiconductor chip, at least a gap between the semiconductor chip and the auxiliary wiring plate being encapsulated with a heat-welding polyimide resin layer, wherein said heat-welding polyimide resin layer is formed by at least one of the heat-welding polyimides represented by the following formulae (1) to (5);
- ##STR31## wherein in the above formulae (1) to (5), R1 represents ##STR32## R2 represents --C3 H6 --, --C4 H8 --, or ##STR33## R3 represents an aromatic silicon-free diamine residue;
Ar represents an aromatic tetracarboxylic acid residue;
n represents an integer of from 1 to 100;
a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦
a/(a+b)≦
1.00; and
the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer. - View Dependent Claims (2, 3, 4, 7, 8, 9, 10, 11, 12, 13, 14)
- ##STR31## wherein in the above formulae (1) to (5), R1 represents ##STR32## R2 represents --C3 H6 --, --C4 H8 --, or ##STR33## R3 represents an aromatic silicon-free diamine residue;
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5. A semiconductor device, wherein a semiconductor chip equipped with at least one electrode is mounted on an auxiliary wiring plate, wherein the auxiliary wiring plate has a surface to which the semiconductor chip is mounted such that the electrode side of the semiconductor chip faces the surface of the auxiliary wiring plate, at least one leading conductor is disposed in the inside of said auxiliary wiring plate, one end of the leading conductor forms an internal electrode projecting from the surface of said auxiliary wiring plate at the semiconductor chip-mounting side, the other end of the leading conductor forms an external electrode projecting from the surface of said auxiliary wiring plate at the opposite side to said semiconductor chip-mounting side, and said internal electrode is connected to the electrode of the semiconductor chip, at least a gap between the semiconductor chip and the auxiliary wiring plate being encapsulated with a heat-welding polyimide resin layer, wherein said heat-welding polyimide resin layer has a primer layer at the side of being brought into contact with said auxiliary wiring plate and the heat-welding polyimide resin layer is contacted with the auxiliary wiring plate via the primer layer, wherein said primer layer is formed from at least one of the heat-welding polyimides represented by the following formulae (6) to (8);
- ##STR34## wherein in the formulae (6) to (8), R4 represents ##STR35## R2 represents --C3 H6 --, --C4 H8 --, or ##STR36## ;
R3 represents an aromatic silicon-free diamine residue;
Ar represents an aromatic tetracarboxylic acid residue;
n represents an integer of from 1 to 100;
c and d represent numbers satisfying the relationship of c+d=1 and the relationship of 0.3≦
c/(c+d)≦
1.00; and
the polyimide of formulae (6) to (8) may be a random copolymer or a block copolymer. - View Dependent Claims (6)
- ##STR34## wherein in the formulae (6) to (8), R4 represents ##STR35## R2 represents --C3 H6 --, --C4 H8 --, or ##STR36## ;
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15. A tape carrier for semiconductor device, wherein at least one leading conductor is disposed in the inside of a high-molecular weight film, one end of the leading conductor forms an internal electrode projecting from the surface of said high-molecular weight film, the other end of said leading conductor forms an external electrode projecting from the back surface of said high-molecular weight film, and the surface of said high-molecular weight film including the surface of said internal electrode is covered with a heat-welding polyimide film formed by at least one of heat-welding polyimides each represented by the following formulae (1) to (5);
- ##STR37## In the formulae (1) to (5), R1 represents ##STR38## R2 represents --C3 H6 --;
--C4 H8 --;
or ##STR39## R3 represents an aromatic silicon-free diamine residue;
Ar represents an aromatic tetracarboxylic acid residue;
n represents an integer of from 1 to 100;
a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦
a/(a+b)≦
1.00; and
the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 27, 28)
- ##STR37## In the formulae (1) to (5), R1 represents ##STR38## R2 represents --C3 H6 --;
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25. A tape carrier for semiconductor device, wherein at least one leading conductor is disposed in the inside of a high molecular weight film, one end of the leading conductor forms an internal electrode projecting from the surface of said high-molecular weight film, the other end of said leading conductor forms an external electrode projecting from the back surface of said high-molecular weight film, the surface of said internal electrode is covered with a heat-welding polyimide film formed from one of heat-welding polyimides each represented by the following formulae (1) to (5), and said internal electrode projects from the surface of said heat-welding polyimide film;
- ##STR40## wherein in the formulae (1) to (5), R1 represents ##STR41## R2 represents --C3 H6 --, --C4 H8 --, or ##STR42## R3 represents an aromatic silicon-free diamine residue;
Ar represents an aromatic tetracarboxylic acid residue;
n represents an integer of from 1 to 100;
a and b represent numbers satisfying the relationship of a+b=1 and the relationship of 0.3≦
a/(a+b)≦
1.00; and
the polyimide of formulae (1) to (5) may be a random copolymer or a block copolymer. - View Dependent Claims (26)
- ##STR40## wherein in the formulae (1) to (5), R1 represents ##STR41## R2 represents --C3 H6 --, --C4 H8 --, or ##STR42## R3 represents an aromatic silicon-free diamine residue;
Specification