Differential filter circuit and integrated circuit structure therefor

• US 5,815,051 A
• Filed: 09/25/1996
• Issued: 09/29/1998
• Est. Priority Date: 09/29/1995
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Burr-Brown Corporation (Texas Instruments, Inc.)
• Inventors: Hamasaki, Toshihiko, Terasawa, Hitoshi, Murota, Toshio
• Primary Examiner(s): Pascal, Robert J.
• Assistant Examiner(s): Bettendorf, Justin P.
• Application Number:
  US08/718,918
• Time in Patent Office: 734 Days
• Field of Search: 333/172, 333/175, 333/181, 333/184, 333/185, 257/533
• US Class Current: 333/172
• CPC Class Codes: H03H 1/02 of RC networks, e.g. integrated networks
• CPC Class Codes: H03H 2001/0064 comprising semiconductor material
• CPC Class Codes: H03H 7/06 including resistors H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence
• CPC Class Codes: H03H 7/425 Balance-balance networks
• CPC Class Codes: H03H 7/427 Common-mode filters H02J3/01 and H02M1/126 takes precedence
• CPC Class Codes: H03M 3/502 Details of the final digital/analogue conversion following the digital delta-sigma modulation

Abstract

Differential filters for removing both normal-mode and common-mode noises are provided. A first-order differential low pass filter is composed of a first resistor connected between a first input terminal and a first output terminal, a second resistor having the same resistance value as the first resistor and connected between a second input terminal and a second output terminal, a first capacitor connected between the first output terminal and a reference potential, a second capacitor having the same capacitance value as the first capacitor and connected between the second output terminal and the reference potential, and a third capacitor connected between the first output terminal and the second output terminal.

Claims

1. A first-order differential low pass filter circuit comprising:

a first resistor exclusively connected between a first input terminal and a first output terminal;

a second resistor having the same resistance value as said first resistor and exclusively connected between a second input terminal and a second output terminal;

a first capacitor connected between said first output terminal and a reference potential;

a second capacitor having the same capacitance value as said first capacitor and connected between said second output terminal and said reference potential; and

a third capacitor connected between said first output terminal and said second output terminal.

2. An integrated circuit structure comprising:

a first insulating layer;

a first electrode formed to be in contact with a first surface of said first insulating layer;

a second electrode and a third electrode formed on an opposite second surface of said first insulating layer at positions opposite to said first electrode;

a fourth electrode and a fifth electrode formed at positions opposite to said second electrode and said third electrode, respectively, through a second insulating layer;

a first resistor and a second resistor formed on the second surface of said first insulating layer;

a first conductor for connecting said first electrode to a reference potential;

a second conductor for connecting a first end of said first resistor to said second electrode;

a third conductor for connecting a first end of said second resistor to said third electrode;

a fourth conductor for connecting said second electrode to said fifth electrode;

a fifth conductor for connecting said third electrode to said fourth electrode;

a first input terminal connected to a second end of said first resistor and a second input terminal connected to a second end of said second resistor, respectively; and

first and second output terminals connected to said fourth electrode and said fifth electrode, respectively,

wherein said first electrode and said second electrode form a first capacitor, said first electrode and said third electrode form a second capacitor, said second electrode and said fourth electrode form one capacitor constituting a third capacitor, and said third electrode and said fifth electrode form another capacitor constituting said third capacitor, said first and second resistors and said first, second and third capacitors constituting a first-order differential low pass filter.

3. The integrated circuit structure according to claim 2, wherein said first electrode comprises a layer formed by diffusing, in a semiconductor substrate, an impurity of a conduction type different from that of said semiconductor substrate.

4. The integrated circuit structure according to claim 2, wherein said first resistor and said second resistor are formed on the second surface of said first insulating layer and wherein said first electrode is formed in said semiconductor substrate such that a first additional capacitor is formed between said first electrode and said first resistor and that a second additional capacitor is formed between said first electrode and said second resistor.

5. The integrated circuit structure according to claim 2, wherein each of said fourth electrode and said fifth electrode comprises a layer formed on an insulating layer on said semiconductor substrate through.

6. The integrated circuit structure according to claim 2, wherein said first electrode and said second electrode are of the same material as said first to fifth electrodes.

7. A second-order differential low pass filter comprising:

a first resistor connected between a first input terminal and a first junction point, and a second resistor and connected between the first junction point and a first output terminal;

a third resistor having the same resistance value as said first resistor and connected between a second input terminal and a second junction point, and a fourth resistor having the same resistance value as said third resistor and connected between the second junction point and a second output terminal;

a first capacitor connected between the first junction point and a reference potential;

a second capacitor connected between the first junction point and the second junction point;

a third capacitor connected between said first output terminal and said second output terminal; and

a fourth capacitor connected between said second output terminal and said reference potential, said fourth capacitor having the same capacitance value as said first capacitor.

8. An integrated circuit structure comprising:

a first insulating layer;

a first electrode formed to be in contact with a first surface of said first insulating layer;

a second electrode and a third electrode formed on opposite second surface of said first insulating layer at positions opposite to said first electrode;

a fourth electrode and a fifth electrode formed at positions opposite to said second electrode and said third electrode, respectively, on a second insulating layer covering said second and third electrodes;

a first resistor, a second resistor, a third resistor and a fourth resistor formed on the first surface;

a first conductor for connecting said first electrode to a reference potential;

a second conductor for connecting a first end of said first resistor to a first end of said third resistor and to said second electrode;

a third conductor for connecting a first end of said second resistor to a first end of said fourth resistor and to said fourth electrode;

a fourth conductor for connecting a second end of said third resistor to said fifth electrode;

a fifth conductor for connecting a second end of said fourth resistor to said third electrode;

a first input terminal connected to a second end of said first resistor and a second input level connected to a second end of said second resistor; and

a first output terminal connected to said third electrode and to said fifth electrode, respectively;

wherein said first electrode and said second electrode form a first capacitor, said second electrode and said fourth electrode form a second capacitor, said third electrode and said fifth electrode form a third capacitor and said first electrode and said third electrode form a fourth capacitor, said first, second, third, and fourth resistors and said first, second, third, and fourth capacitors constituting a second-order differential low pass filter.

9. The integrated circuit structure according to claim 8, wherein said first electrode comprises a layer formed by diffusing, in said semiconductor substrate, an impurity of a conduction type different from that of said semiconductor substrate.

10. The integrated circuit structure according to claim 8, wherein said first resistor to said fourth resistor are formed on the second surface of said first insulating layer and wherein said first electrode is formed in a positional relationship with said semiconductor substrate such that a first additional capacitor is formed between said first electrode and said first resistor, a second additional capacitor is formed between said first electrode and said third resistor, a third additional capacitor is formed between said first electrode and said second resistor, and a fourth additional capacitor is formed between said first electrode and said fourth resistor.

11. The integrated circuit structure according to claim 8, wherein each of said fourth electrode and said fifth electrode comprises a layer formed on an insulating layer said semiconductor substrate.

12. The integrated circuit structure according to claim 8, wherein said first resistor to said fourth resistor are made of the same material as said first to fifth electrodes.

13. An integrated circuit structure comprising:

a first insulating layer;

a first electrode formed to be in contact with a first surface of said first insulating layer;

a second electrode and a third electrode formed on an opposite second surface of said first insulating layer at positions opposite to said first electrode;

a fourth electrode and a fifth electrode formed at positions opposite to said second electrode and said third electrode, respectively, on a second insulating layer;

a first resistor, a second resistor, a third resistor and a fourth resistor formed on the second surface of said first insulating layer;

a first conductor for connecting said first electrode to a reference potential;

a second conductor for connecting a first end of said first resistor to a first end of said third resistor and to said fourth electrode;

a third conductor for connecting a first end of said second resistor to a first end of said fourth resistor and to said second electrode;

a fourth conductor for connecting a second end of said third resistor to said third electrode;

a fifth conductor for connecting the other end of said fourth resistor to said fifth electrode;

a first input terminal connected to a second end of said first resistor and a second input terminal connected to a second end of said second resistor, respectively, and

first and second output terminals connected to said third electrode and said fifth electrode, respectively;

wherein said first electrode and said second electrode form a first capacitor, said second electrode and said fourth electrode form a second capacitor, said third electrode and said fifth electrode form a third capacitor and said first electrode and said third electrode form a fourth capacitor, said first, second, third, and fourth resistors and said first, second, third, and fourth capacitors constituting a second-order differential low pass filter.

14. The integrated circuit structure according to claim 13, wherein said first electrode comprises a layer formed by diffusing, in said semiconductor substrate, an impurity of a conduction type different from said semiconductor substrate.

15. The integrated circuit structure according to claim 13, wherein said first resistor to said fourth resistor are formed on the second surface of said first insulating layer and wherein said first electrode is formed in a positional relationship with said semiconductor substrate such that a first additional capacitor is formed between said first electrode and said first resistor, a second additional capacitor is formed between said first electrode and said third resistor, a third additional capacitor is formed between said first electrode and said second resistor and a fourth additional capacitor is formed between said first electrode and said fourth resistor.

16. The integrated circuit structure according to claim 13, wherein each of said fourth electrode and said fifth electrode comprises a layer formed on an insulating layer said semiconductor substrate.

17. The integrated circuit structure according to claim 13, wherein said first resistor to said fourth resistor are made of the same material as said first to fifth electrodes.

18. A differential high pass filter comprising:

a first capacitor connected between a first input terminal and a first output terminal;

a second capacitor having the same capacitance value as said first capacitor and connected between a second input terminal and a second output terminal;

a first resistor connected between said first output terminal and a reference potential;

a second resistor having the same resistance value as said first resistor and connected between said second output terminal and said reference potential; and

a third resistor connected between said first output terminal and said second output terminal.