Process for forming deposited film for light-receiving member, light-received member produced by the process deposited film forming apparatus, and method for cleaning deposited film forming apparatus
First Claim
1. A method for cleaning an apparatus for forming a film by vapor phase deposition comprising:
- (a) introducing an etching gas selected from the group consisting of ClF3 gas and CF4 gas from gaps between dummy substrates disposed in a circle in the apparatus to a discharge space circumscribed by the dummy substrates; and
thereafter(b) applying to at least one of the dummy substrates an electromagnetic wave with a frequency from 20 MHZ to 450 MHZ to generate a plasma between the at least one of the dummy substrates to which the electromagnetic wave is applied and the remaining dummy substrates to which the electromagnetic wave is not applied to thereby remove a reaction product of the vapor phase deposition adhered to the inside of the apparatus.
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Abstract
A process for producing a light-receiving member comprising a substrate and provided thereon a blocking layer and a photoconductive layer each comprised of a non-monocrystalline material is disclosed in which the blocking layer is comprised of a non-monocrystalline material comprising silicon atoms as matrix and at least one kind of atoms selected from the group consisting of carbon atoms, oxygen atoms and nitrogen atoms, the process comprising forming the blocking layer and the photoconductive layer by plasma CVD using glow discharge decomposition of a starting material gas caused by applying to the starting material gas an electromagnetic wave with a frequency of from 20 MHz to 450 MHz.
50 Citations
14 Claims
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1. A method for cleaning an apparatus for forming a film by vapor phase deposition comprising:
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(a) introducing an etching gas selected from the group consisting of ClF3 gas and CF4 gas from gaps between dummy substrates disposed in a circle in the apparatus to a discharge space circumscribed by the dummy substrates; and
thereafter(b) applying to at least one of the dummy substrates an electromagnetic wave with a frequency from 20 MHZ to 450 MHZ to generate a plasma between the at least one of the dummy substrates to which the electromagnetic wave is applied and the remaining dummy substrates to which the electromagnetic wave is not applied to thereby remove a reaction product of the vapor phase deposition adhered to the inside of the apparatus. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification