Stamp for a lithographic process

• US 5,817,242 A
• Filed: 08/01/1996
• Issued: 10/06/1998
• Est. Priority Date: 08/04/1995
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Michel, Bruno, Biebuyck, Hans Andre
• Primary Examiner(s): CHAPMAN, MARK A
• Application Number:
  US08/691,285
• Time in Patent Office: 796 Days
• Field of Search: 216/41, 216/44, 216/48, 216/54, 438/745, 438/749
• US Class Current: 216/41
• CPC Class Codes: B41K 1/00 Portable hand-operated devices without means for supporting or locating the articles to be stamped, i.e. hand stamps; Inking devices or other accessories therefor
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: G03F 9/00 Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically G03F7/22 takes precedence; preparation of photographic masks G03F1/00; within photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 9/7042 Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting non-exposure lithographic processes per se G03F7/0002
• CPC Class Codes: G03F 9/7076 Mark details, e.g. phase grating mark, temporary mark

Abstract

A hybrid stamp structure for lithographic processing of features below 1 micron is described, comprising a deformable layer (14) for accommodating unevenness of the surface of a substrate, and a patterned layer on the deformable layer in which a lithographic pattern is engraved. The stamp structure is further enhanced by comprising a third layer (16), which acts as rigid support for the stamp, thus preventing an undesired deformation of the stamp under load.

Claims

1. A stamp structure for a lithographic process, comprising a deformable first layer of a first material, and a second layer of a second material positioned on said deformable first layer, said second layer having a lithographic pattern to be transferred to a substrate, said deformable first layer deforming to permit conformal contact of said second layer to the surface of said substrate at times a load is applied.

2. The stamp structure of claim 1, further including a rigid support for preventing an undesired deformation of said deformable first layer under said load.

3. The stamp structure of claim 1, further comprising self-aligning means (301, 311;

401, 411,

     420) for an accurate relative positioning and/or deformation of the substrate (30;

     40) and the stamp structure (31;

     41) during the lithographic process.

4. The stamp structure of claim 3, wherein the self-aligning means comprises protruding elements (311) and corresponding recess elements (301), preferably with tilted sidewalls.

5. The stamp structure of claim 3, wherein the self-aligning means comprises a surface tension gradient.

6. The stamp structure of claim 5, wherein surface tension gradient is achieved by pads (401, 411) having a higher affinity to a liquid than their surrounding areas.

7. Use of a stamp structure in accordance with claim 1 for submicron lithography.

8. A lithographic process comprising the steps of:

selecting a stamp structure comprising a deformable first layer of a first material, and a second layer of a second material positioned on said deformable first layer, said second layer having a lithographic pattern to be transferred to a substrate, said deformable first layer deforming to permit conformal contact of said second layer to the surface of said substrate at times a load is applied;

applying a substance to said patterned layer; and

bringing said second layer into conformal contact with said surface of said substrate.

9. The lithographic process of claim 8, further comprising the steps of

preparing a master alignment stamp carrying alignment marks;

and

using said alignment master for reproducing self-alignment means on the substrate and the patterned layer at precisely corresponding positions.