Method for forming a thin film

• US 5,817,368 A
• Filed: 07/31/1995
• Issued: 10/06/1998
• Est. Priority Date: 08/08/1994
• Status: Expired due to Fees

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Hashimoto, Shinichi
• Primary Examiner(s): PADGETT, MARIANNE L
• Application Number:
  US08/509,445
• Time in Patent Office: 1,163 Days
• Field of Search: 427/255.1, 427/255.2, 427/255.3, 427/563, 427/567, 427/568, 427/574, 427/578, 427/579, 427/397.7, 427/559, 427/101, 438/761, 438/763, 438/764
• US Class Current: 427/255.38
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: H01C 17/08 by vapour deposition
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/32055 Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers

Abstract

Alternate formation of high-resistance and low-resistance layers form a thin film with reduced dopant gradient in its thickness. A desired sheet resistance is attained by adjusting the thickness of the stacked layers, the degree of doping of the film, and the number of layers used to make the thin film during the film formation process.

Claims

1. A method for forming a thin film having a prescribed sheet resistance, comprising steps of:

forming a first deposition layer made substantially of a first material on a substrate;

said first material being semi-insulating polycrystalline silicon (SIPOS);

then forming at least one second deposition layer and at least one third deposition layer to form a stack of alternating layers of said at least one second deposition layer then said at least one third deposition layer, said stack being formed on said first deposition layer on said substrate, wherein said at least one second deposition layer is made substantially from a second material and said at least one third deposition layer is made substantially from said first material;

said thin film being composed of said first deposition layer, said at least one second deposition layer, and said at least one third deposition layer;

said steps of forming each of said first deposition layer and said at least one third deposition layer including;

heating a chemical vapor deposition (CVD) reaction vessel to a first film formation temperature;

thereafter, drawing a first vacuum in said CVD reaction vessel;

thereafter, introducing a mixed gas of SiH₄ and N₂ O into said CVD reaction vessel at a first flow rate and for a first period of time; and

controlling said first flow rate and said first period of time to produce a first resistivity when forming said first layer and said third layer;

said step of forming said at least one second deposition layer including;

heating said CVD reaction vessel to a second film formation temperature;

drawing a second vacuum in said CVD reaction vessel;

thereafter, introducing a reactive gas containing a dopant into said CVD reaction vessel at a second flow rate and for a second period of time; and

controlling said second flow rate and said second period of time to produce a second resistivity when forming said second layer;

said first resistivity being substantially greater than said second resistivity, but there is no resistance gradient thickness-wise for an entire thickness of said thin film; and

heating said thin film at an annealing temperature and for a third period of time effective to cause diffusion of said dopant from said at least one second deposition layer into said first deposition layer and said at least one third deposition layer after said thin film is formed, to produce said prescribed sheet resistance of said thin film, whereby said prescribed sheet resistance is made substantially uniform thickness-wise throughout the entire thickness of said thin film.

2. The method of claim 1, wherein said first film formation temperature is between about 500°

to about 680°

C.

3. The method of claim 1, wherein said second film formation temperature is between about 500°

to about 680°

C.

4. The method of claim 1, further comprising:

heating said film to said annealing temperature of about 900°

C. in a nitrogen atmosphere for said third period of time equal to 40 minutes to cause said diffusion of said dopant from said at least one second deposition layer into said first deposition layer and said at least one third deposition layer.

5. The method of claim 1, wherein said dopant is selected from the group consisting of P, B, and As.

6. The method of claim 1 wherein said controlling said first resistivity includes controlling thicknesses of said first deposition layer and said at least one third deposition layer.

7. The method of claim 6 wherein said first deposition layer and said at least one third deposition layer have equal thicknesses.

8. The method of claim 6 wherein each of said first deposition layer and said at least one third deposition layer have different thicknesses.

9. The method of claim 1 wherein controlling said second resistivity includes controlling a thickness of said at least one second deposition layer.

10. The method of claim 1 wherein controlling said second resistivity includes adjusting a dopant concentration of said at least one second deposition layer.

11. A method for forming a thin film as described in claim 1, wherein a total number of layers is an odd number of at least 3.

12. A method for forming a thin film having a prescribed sheet resistance, comprising steps of:

forming a first deposition layer made substantially of a first material on a substrate;

then forming at least one second deposition layer and at least one third deposition layer to form a stack of alternating layers of said at least one second deposition layer then said at least one third deposition layer, said stack being formed on said first deposition layer on said substrate, wherein said at least one second deposition layer is made substantially from a second material and said at least one third deposition layer is made substantially from said first material;

said first material having first resistivity;

said second material having a second resistivity;

said first resistivity being substantially greater than said second resistivity, but there is no resistance gradient thickness-wise for an entire thickness of said thin film;

said thin film being composed of said first deposition layer, said at least one second deposition layer, and said at least one third deposition layer;

said steps of forming each of said first deposition layer and said at least one third deposition layer including;

heating a chemical vapor deposition (CVD) reaction vessel to a first film formation temperature;

thereafter, drawing a first vacuum in said CVD reaction vessel;

thereafter, introducing a mixed gas of SiH₄ and N₂ O into said CVD reaction vessel at a first flow rate and for a first period of time; and

controlling said first flow rate and said first period of time to produce said first resistivity when forming said first material;

said step of forming at least one second deposition layer including;

heating said CVD reaction vessel to a second film formation temperature;

thereafter, drawing a second vacuum in said CVD reaction vessel;

thereafter, introducing SiH₄ gas containing a dopant into said CVD reaction vessel at a second flow rate and for a second period of time to form a polycrystal silicon layer; and

thereafter, releasing said vacuum; and

heating said thin film at an annealing temperature and for a third period of time effective to cause diffusion of said dopant from said at least one second deposition layer into said first deposition layer and said at least one third deposition layer after said thin film is formed, to produce said prescribed sheet resistance of said thin film, whereby said prescribed sheet resistance is made substantially uniform thickness-wise throughout the entire thickness of said thin film.

13. The method of claim 12 wherein said step of heating said thin film includes heating to said annealing temperature of about 900°

C. in a nitrogen atmosphere for said third period of time equal to about 40 minutes.

14. The method of claim 12, wherein said dopant is selected from the group consisting of P, B, and As.

15. A method for forming a thin film having a prescribed sheet resistance, comprising steps of:

forming a first deposition layer made of semi-insulating polycrystalline silicon (SIPOS) on a substrate;

then forming at least one second deposition layer containing a dopant and at least one third deposition layer made of SIPOS to form a stack of alternating layers of said at least one second deposition layer then said at least one third deposition layer, said stack being formed on said first deposition layer on said substrate;

said first deposition layer, said at least one second deposition layer, and said at least one third deposition layer forming said thin film;

said first deposition layer and said third deposition layer having a first resistivity;

said second deposition layer having a second resistivity;

said first resistivity being substantially greater than said second resistivity, but there is no resistance gradient thickness-wise for an entire thickness of said thin film; and

modifying said first resistivity and said second resistivity to produce said prescribed sheet resistance of said thin film, said step of modifying including diffusing said dopant from said at least one second deposition layer into said first deposition layer and said at least one third deposition layer, wherein said prescribed sheet resistance of said thin film is between said first resistivity and said second resistivity, and said prescribed sheet resistance of said thin film is substantially uniform thickness-wise throughout the entire thickness of said thin film.

16. A method for forming a thin film having a prescribed sheet resistance, comprising steps of:

forming a first deposition layer made of semi-insulating polycrystalline silicon (SIPOS) on a substrate;

then forming at least one second deposition layer made of a doped polycrystal silicon and at least one third deposition layer made of SIPOS to form a stack of alternating layers of said at least one second deposition layer then said at least one third deposition layer, said stack being formed on said first deposition layer on said substrate;

said first deposition layer, said at least one second deposition layer, and said at least one third deposition layer forming said thin film;

said first deposition layer and said third deposition layer having a first resistivity;

said second deposition layer having a second resistivity;

said first resistivity being substantially greater than said second resistivity, but there is no resistance gradient thickness-wise for an entire thickness of said thin film; and

modifying said first resistivity and said second resistivity to produce said prescribed sheet resistance of said thin film, said step of modifying including diffusing said dopant from said at least one second deposition layer into said first deposition layer and said at least one third deposition layer, wherein said prescribed sheet resistance of said thin film is between said first resistivity and said second resistivity, and said prescribed sheet resistance of said thin film is substantially uniform thickness-wise throughout the entire thickness of said thin film.