Prevention of clogging in CVD apparatus

• US 5,817,575 A
• Filed: 01/30/1996
• Issued: 10/06/1998
• Est. Priority Date: 01/30/1996
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Han, Leon M.
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Berry, Renee R.
• Application Number:
  US08/594,058
• Time in Patent Office: 980 Days
• Field of Search: 437/190, 437/192, 437/228, 156/345, 118/715, 118/900, 427/448.1, 427/555, 438/680, 438/683
• US Class Current: 438/680
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Abstract

Plugging of the effluent line of an apparatus comprising CVD chamber is prevented or substantially reduced by injecting a hot gas into the effluent line during processing. In CVD tungsten processing, including preconditioning the reaction chamber, deposition, and cleaning, a hot gas, such as dried air or nitrogen, is injected into the effluent line downstream of the vacuum pump to maintain the temperature of the internal walls of the effluent line below that at which condensation of WOF₄ occurs. In another embodiment, periodic high bursts of a hot gas into the effluent line removes WO₃ deposits proximate the inlet of the downstream wet scrubber.

Claims

1. A method of reducing clogging in an effluent line communicating with a chemical vapor deposition chamber due to condensation of vapors in the effluent line, which method comprises injecting a hot gas from externally of the chemical vapor deposition chamber directly into the effluent line to maintain the temperature of internal walls of the effluent line above the temperature at which condensation of the vapors occurs.

2. The method according to claim 1, wherein

the apparatus comprises a vacuum pump having an inlet port in communication with the chemical vapor deposition chamber and an outlet port in communication with the effluent line;

and the method comprises

injecting the hot gas into the effluent line downstream of and in proximity to the outlet port of the vacuum pump.

3. The method according to claim 2, wherein the apparatus further comprises a wet scrubber in communication with the effluent line downstream of the hot gas inlet into the inlet line.

4. The method according to claim 1, wherein the gas is dried air, nitrogen or an inert gas.

5. The method according to claim 1, wherein the gas is dried air or nitrogen.

6. The method according to claim 2, comprising:

chemical vapor depositing tungsten on a substrate in the chamber; and

injecting the hot gas into the effluent line under conditions sufficient to prevent condensation of WOF₄ on the internal walls of the effluent line.

7. The method according to claim 6, further comprising:

preconditioning the chamber, and cleaning the chamber.

8. The method according to claim 7, comprising

cleaning the chamber with a fluorinated species;

and

injecting the hot gas into the effluent line during cleaning.

9. The method according to claim 8, wherein the fluorinated species is SF₆ /O₂, NF₃ /O₂, CF₄ /O₂, C₂ F₆ or NF₃, and the hot gas is dried air or N₂.

10. The method according to claim 7, comprising injecting the hot gas into the effluent line during preconditioning, chemical vapor deposition, and cleaning.

11. The method according to claim 6, comprising injecting the hot gas at a temperature sufficient to maintain the internal walls of the effluent line at a temperature of at least about 60°

C.-80°

C.

12. The method according to claim 6, comprising injecting the hot gas is injected at a temperature of about 20°

C. to about 260°

C.

13. The method according to claim 12, wherein the temperature is about 40°

C. to about 90°

C.

14. The method according to claim 6, comprising injecting the hot gas at a rate of about 10 to about 300 slpm.

15. The method according to claim 14, comprising injecting the hot gas at a rate of about 10 to about 100 slpm.

16. The method according to claim 15, comprising injecting the hot gas at a rate of about 10 to about 25 slpm.

17. The method according to claim 6, wherein the apparatus comprises a wet scrubber downstream and in communication with the effluent line, and the method further comprises periodically injecting hot dried air or hot nitrogen at a rate of about 250 to about 350 slpm for about 5 to about 30 seconds to remove deposited tungsten oxide proximate the inlet of the wet scrubber.

34. The method according to claim 1, comprising injecting the hot gas during idle time when the apparatus is not employed for chemical vapor deposition processing.

36. The method according to claim 1, further comprising wrapping insulation around the effluent line.

38. The method according to claim 36, wherein the injection of hot dried air or hot nitrogen substantially reduces tungsten oxide clogging in a moisture-rich area of the wet scrubber.

41. The method according to claim 1, wherein the hot gas is injected externally to the chemical vapor deposition chamber.

18. A method of manufacturing a semiconductor device, which method comprises:

depositing tungsten by chemical vapor deposition on a substrate in a chemical vapor deposition chamber;

exhausting vapors from the chamber by a vacuum pump through an effluent line; and

injecting a hot gas from externally of the chemical vapor deposition chamber directly into the effluent line to substantially reduce clogging in the effluent line due to the condensation of WOF₄ by maintaining the internal walls of the effluent line at a temperature above that at which condensation of WOF₄ occurs.

19. The method according to claim 18, further comprising:

preconditioning the chamber, and cleaning the reaction chamber; and

injecting the hot gas during preconditioning, depositing, and cleaning.

20. The method according to claim 19, comprising cleaning the reaction chamber employing a fluorinated species.

21. The method according to claim 20, wherein the fluorinated species is SF₆ /O₂, NF₃ /O₂, CF₄ /O₂, NF₃ or C₂ F₆.

22. The method according to claim 18, wherein the hot gas is air, nitrogen, or an inert gas.

23. The method according to claim 18, wherein the hot gas is dried air or nitrogen.

24. The method according to claim 18, comprising injecting the hot gas into the effluent line at a temperature sufficient to maintain the internal walls of the effluent line at a temperature of at least about 60°

C.-80°

C.

25. The method according to claim 18, wherein the hot gas is injected at a temperature of about 20°

C. to about 260°

C.

26. The method according to claim 25, wherein the hot gas is injected at a temperature of about 40°

C. to about 90°

C.

27. The method according to claim 18, comprising injecting the hot gas at a rate of about 10 to about 300 slpm.

28. The method according to claim 27, comprising injecting the hot gas at a temperature of about 10 to about 100 slpm.

29. The method according to claim 28, comprising injecting the hot gas at a temperature of about 10 to about 25 slpm.

30. The method according to claim 18, wherein:

the apparatus further comprises a wet scrubber in communication with the effluent line downstream of the hot gas injection.

31. The method according to claim 30, further comprising periodically introducing hot dried air or hot nitrogen into the effluent line at a rate of about 250 to about 300 slpm for about 5 to about 30 seconds to remove deposited tungsten oxide proximate the inlet of the wet scrubber.

35. The method according to claim 18, comprising injecting the hot gas during idle time when the apparatus is not employed for chemical vapor deposition processing.

37. The method according to claim 18, further comprising wrapping insulation around the effluent line.

39. The method according to claim 31, wherein the periodic introduction of hot dried air or hot nitrogen substantially reduces tungsten oxide clogging in a moisture-rich area of the wet scrubber.

40. The method according to claim 31, comprising injecting the hot gas into the effluent line during idle time when the apparatus is not employed for chemical vapor deposition processing.

42. The method according to claim 18, wherein the hot gas is injected externally to the chemical vapor deposition chamber.

32. A method of reducing tungsten oxide clogging in the moisture-rich area of a wet scrubber situated downstream of and in communication with a tungsten-chemical vapor deposition chamber via an effluent line, which method comprises periodically injecting a hot gas from externally of the tungsten-chemical vapor deposition chamber directly into the effluent line at a rate of about 250 to about 350 slpm for about 5 to about 30 seconds.

33. The method according to claim 32, comprising injecting hot dried air or nitrogen.

43. The method according to claim 32, wherein the hot gas is injected externally to the chemical vapor deposition chamber.