Vertical cavity surface emitting laser with low band gap highly doped contact layer

• US 5,818,861 A
• Filed: 07/19/1996
• Issued: 10/06/1998
• Est. Priority Date: 07/19/1996
• Status: Expired due to Term

• Current Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Tan, Michael R., Wang, Shih-Yuan
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/684,649
• Time in Patent Office: 809 Days
• Field of Search: 372/46, 372/96, 372/45, 372/44
• US Class Current: 372/46.01
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/3054 p-doping

Abstract

A contact structure for a vertical cavity surface emitting laser is described. The contact structure comprises a surface metal contact, a degeneratively doped layer of low bandgap material less than 200 Å thick, and a plurality of current spreading layers. The contact structure provides a low ohmic path between the metal contact and the active region of the vertical cavity surface emitting laser.

Claims

1. In a vertical cavity surface emitting laser having at least a substrate, a lower distributed Bragg reflector, an active region generating light, and an upper distributed Bragg reflector, a contact structure comprising:

a plurality of current spreading layers overlying the upper distributed Bragg reflector, the current spreading layer closest to the upper distributed Bragg reflector having a dopant concentration approximately equal to that of the upper distributed Bragg reflector and successive current spreading layers having increasing dopant concentrations;

a degeneratively doped layer comprising a low bandgap material overlying the current spreading layers, the doping concentration of the current spreading layer underlying the degeneratively doped layer having a doping concentration approximately the same as the degeneratively doped layer; and

a surface metal contact overlying portions of the degeneratively doped layer, the combination of the current spreading layers, the degeneratively doped layer, and the surface metal contact providing a low resistance current path from the surface contact to the active region.

2. The vertical cavity surface emitting laser of claim 1, wherein the current spreading layers comprise AlGaAs.

3. The vertical cavity surface emitting laser of claim 2, wherein the degeneratively doped layer comprises GaAs.

4. The vertical cavity surface emitting laser of claim 2, wherein the degeneratively doped layer comprises InGaAs.

5. The vertical cavity surface emitting laser of claim 1, wherein portions of the degeneratively doped layer not overlain by the surface metal contact are removed to allow additional light to escape.