Surface emitting semiconductor laser

• US 5,818,862 A
• Filed: 12/26/1996
• Issued: 10/06/1998
• Est. Priority Date: 12/27/1995
• Status: Expired due to Term

• Current Assignee: II-VI Laser Enterprise GmbH (Coherent Corp.)
• Original Assignee: Alcatel Alsthom Compagnie Generale d'Electricite (Nokia Corporation)
• Inventors: Salet, Paul
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/773,360
• Time in Patent Office: 649 Days
• Field of Search: 372/46, 372/45, 372/96
• US Class Current: 372/50.124
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18316 Airgap confined
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials

Abstract

To improve the efficiency and to reduce the temperature rise of a surface emitting semiconductor laser, the laser includes between a buried active layer and a mirror, a current blocking layer incorporating an opening centered on the active layer and having dimensions less than those of the latter. Applications include optical telecommunication systems.

Claims

1. A surface emitting laser comprising:

an active layer in a mesa configuration, buried in an electrical current injection layer made of a p-doped III-V semiconductor alloy, said active layer being bounded on three sides by said electrical current layer,

at least one mirror parallel to said active layer on said injection layer,

an electrode alongside said mirror and in electrical contact with said injection layer, and

a current blocking layer in said injection layer in a plane substantially parallel to said active layer, said blocking layer having an opening centered relative to said active layer and having smaller dimensions than said active layer.

2. The laser claimed in claim 1, wherein said dimensions of said opening and the distance between said blocking layer and said active layer are chosen so that the electric current flowing through said active layer has a uniform current density.

3. The laser claimed in claim 1, wherein said blocking layer is made of the same III-V semiconductor alloy, but n-doped.

4. The laser claimed in claim 1, wherein said blocking layer is made from an electrical insulator.

5. The laser claimed in claim 4, wherein said insulator is aluminum oxide.

6. The laser claimed in claim 4, wherein said blocking layer is a notch obtained by lateral etching in said injection layer.