Laminate and method for preparing same

• US 5,820,994 A
• Filed: 02/06/1997
• Issued: 10/13/1998
• Est. Priority Date: 02/16/1996
• Status: Expired due to Term

• Current Assignee: Mitsui Chemicals Incorporated (Mitsui Chemicals)
• Original Assignee: Mitsui Chemicals Incorporated (Mitsui Chemicals)
• Inventors: Kawasaki, Noboru, Miyashita, Takehiro, Tajiri, Yoko, Fukuda, Shin, Fukuda, Nobuhiro, Okamura, Tomoyuki, Yamazaki, Fumiharu, Gotoh, Yumi
• Primary Examiner(s): NAKARANI, DHIRAJLAL S
• Application Number:
  US08/796,889
• Time in Patent Office: 614 Days
• Field of Search: 428/446, 428/451, 428/698, 428/699, 428/701, 428/702, 204/192.14, 204/192.15, 204/192.16, 427/525, 427/527, 427/529, 427/530, 427/539, 427/579
• US Class Current: 428/451
• CPC Class Codes: B32B 15/08 of synthetic resin
• CPC Class Codes: B32B 27/06 as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a layer of a particular substance B32B9/045; next to a bituminous or tarry layer B32B11/046; next to a water setting substance layer B32B13/12; next to a metal layer B32B15/08; next to a glass layer B32B17/10; next to a layer formed of natural mineral fibres or particles B32B19/045; next to a wood layer B32B21/08; next to a cellulosic plastic layer B32B23/08; next to a natural or synthetic rubber layer B32B25/08
• CPC Class Codes: C23C 14/205 by cathodic sputtering
• CPC Class Codes: C23C 14/5826 Treatment with charged particles C23C14/582 takes precedence
• CPC Class Codes: C23C 14/5853 Oxidation
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: H05K 3/38 Improvement of the adhesion between the insulating substrate and the metal
• CPC Class Codes: Y10T 428/31667 Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Abstract

A laminate using a polymeric molded article as a substrate and having a light transparency, gas barrier properties and an excellent alkali resistance. The laminate is obtainable by carrying out a surface treatment to deposit an oxide of at least one metal selected from the metal elements of groups 2, 8, 9, 10 and 11 of the periodic table, and then forming a gas barrier layer such as oxides of silicon, nitrides of silicon and carbides of silicon on the treated surface. The gas barrier layer is not peeled off from the polymeric molded article even after being immersed in an alkali solution of pH 12 or more. The amount of the metal on the treated surface is preferably in the range of 5×10¹⁴ atoms/cm² to 3×10¹⁶ atoms/cm² in terms of the metal atoms per unit area. The practical performance of the laminate is not deteriorated during the patterning, by alkali etching, of a transparent conductive layer formed on the laminate.

Claims

1. A laminate which is obtained by conducting a surface treatment to deposit an oxide of at least one metal selected from the group consisting of metals in groups 2, 8, 9, 10 and 11 of the periodic table on at least one surface of a polymeric molded article, wherein the amount of metal oxide deposited on the surface of the polymeric molded article is in the range of 5×

10¹⁴ atoms/cm² to 3×

10¹⁶ atoms/cm² in terms of the amount of the metal atoms per unit area that has been surface treated, and then forming a gas barrier layer on the surface which has been surface treated,

wherein the gas barrier layer is constituted of any of a layer mainly comprising an oxide of silicon, a layer mainly comprising a nitride of silicon or a layer mainly comprising a carbide of silicon, and

the gas barrier layer is not peeled off from the polymeric molded article, even after being immersed in an alkali solution of pH 12 or more.

2. The laminate according to claim 1 wherein the metal is magnesium, iron, cobalt, nickel or copper.

3. The laminate according to claim 1 wherein the gas barrier layer mainly comprises an oxide of silicon.

4. The laminate according to claim 3 wherein the polymeric molded article is a transparent polymeric molded article.

5. The laminate according to claim 1 wherein the polymeric molded article is a transparent polymeric molded article.

6. A method for preparing a laminate described in claim 5 which comprises a step of depositing at least one metal selected from the group consisting of metals in groups 2, 8, 9, 10 and 11 of the periodic table on at least one surface of a polymeric molded article, and then treating it under an oxidizing atmosphere, whereby said at least one surface becomes a metal oxide treated surface wherein the amount of metal oxide deposited on the surface of the polymeric molded article is in the range of 5×

10¹⁴ atoms/cm² to 3×

10¹⁶ atoms/cm² in terms of the amount of the metal atoms per unit area that has been surface treated, and

a step of forming a gas barrier layer constituted of any of a layer mainly comprising an oxide of silicon, a layer mainly comprising a nitride of silicon or a layer mainly comprising a carbide of silicon on the treated surface.

7. The method according to claim 6 wherein the any one of the layer mainly comprising the oxide of silicon, the layer mainly comprising the nitride of silicon or the layer mainly comprising the carbide of silicon is formed by a plasma CVD method of an organic silicon compound.

8. The method according to claim 6 wherein the any one of the layer mainly comprising the oxide of silicon, the layer mainly comprising the nitride of silicon or the layer mainly comprising the carbide of silicon is formed by a sputtering process.

9. The method according to claim 6 wherein the treatment under the oxidizing atmosphere is an oxygen plasma treatment.

10. A method for preparing a laminate described in claim 2 which comprises a step of depositing at least one metal selected from the group consisting of magnesium, iron, cobalt, nickel, and copper on at least one surface of a polymeric molded article, and then treating it under an oxidizing atmosphere, whereby said at least one surface becomes a metal oxide treated surface wherein the amount of metal oxide deposited on the surface of the polymeric molded article is in the range of 5×

10¹⁴ atoms/cm² to 3×

10¹⁶ atoms/cm² in terms of the amount of the metal atoms per unit area that has been surface treated, and

a step of forming a gas barrier layer constituted of any of a layer mainly comprising an oxide of silicon, a layer mainly comprising a nitride of silicon or a layer mainly comprising a carbide of silicon on the treated surface.

11. The method according to claim 10 wherein the any one of the layer mainly comprising the oxide of silicon, the layer mainly comprising the nitride of silicon.

12. The method according to claim 10 wherein the any one of the layer mainly comprising the oxide of silicon, the layer mainly comprising the nitride of silicon or the layer mainly comprising the carbide of silicon is formed by a sputtering process.

13. The method according to claim 10 wherein the treatment under the oxidizing atmosphere is an oxygen plasma treatment.

14. A method for preparing a laminate described in claim 1 which comprises a step of depositing at least one metal selected from the group consisting of metals in groups 2, 8, 9, 10 and 11 of the periodic table on at least one surface of a polymeric molded article, and then treating it under an oxidizing atmosphere, whereby said at least one surface becomes a metal oxide treated surface wherein the amount of metal oxide deposited on the surface of the polymeric molded article is in the range of 5×

10¹⁴ atoms/cm² to 3×

10¹⁶ atoms/cm² in terms of the amount of the metal atoms per unit that has been treated, and

a step of forming a gas barrier layer constituted of any of a layer mainly comprising an oxide of silicon, a layer mainly comprising a nitride of silicon or a layer mainly comprising a carbide of silicon on the treated surface.

15. The method according to claim 14 wherein the any one of the layer mainly comprising the oxide of silicon, the layer mainly comprising the nitride of silicon or the layer mainly comprising the carbide of silicon is formed by a plasma CVD method of an organic silicon compound.

16. The method according to claim 14 wherein the any one of the layer mainly comprising the oxide of silicon, the layer mainly comprising the nitride of silicon or the layer mainly comprising the carbide of silicon is formed by a sputtering process.

17. The method according to claim 14 wherein the treatment under the oxidizing atmosphere is an oxygen plasma treatment.