Photoelectric conversion device

• US 5,821,597 A
• Filed: 11/08/1995
• Issued: 10/13/1998
• Est. Priority Date: 09/11/1992
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
• Inventors: Nakajima, Setsuo, Arai, Yasuyuki, Abe, Masayoshi, Shinohara, Hisato
• Primary Examiner(s): Arroyo, Teresa M.
• Application Number:
  US08/554,241
• Time in Patent Office: 1,070 Days
• Field of Search: 257/433, 257/668, 257/698, 257/458, 257/656
• US Class Current: 257/458
• CPC Class Codes: H01L 31/02008 for solar cells or solar cell modules
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/046 PV modules composed of a plurality of thin film solar cells deposited on the same substrate
• CPC Class Codes: H01L 31/0463 characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
• CPC Class Codes: H01L 31/0465 comprising particular structures for the electrical interconnection of adjacent PV cells in the module H01L31/0463 takes precedence
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/206 Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.

Claims

1. A photoelectric conversion device comprising:

a common substrate having a front surface and a rear surface;

a plurality of series connected photovoltaic elements integrated on said common substrate, each of said photovoltaic elements comprising;

a first electrode directly formed on the front surface of said common substrate;

a photoelectric conversion semiconductor layer provided on said first electrode; and

a second electrode formed on said photoelectric conversion semiconductor layer;

an output terminal provided on the rear surface of said substrate; and

a conductor connecting said output terminal with the second electrode of one of the photovoltaic elements through at least said common substrate and said photoelectric conversion semiconductor layer.

2. The photoelectric conversion device of claim 1 wherein said substrate comprises an organic material.

3. The photoelectric conversion device of claim 1 wherein said photoelectric conversion semiconductor layer has a PIN junction.

4. A photoelectric conversion device comprising:

an organic resin substrate having a front surface and a rear surface, said substrate having at least one contact hole opened therethrough;

a first electrode formed on said front surface;

a photoelectric conversion semiconductor layer provided on said first electrode;

a second electrode formed on said photoelectric conversion semiconductor layer;

an output terminal provided on the rear surface of said substrate; and

a conductive layer formed on said second electrode and extending at least through the hole of the substrate and through a hole of said photoelectric conversion semiconductor layer to contact said output terminal, thereby, electrically connecting said output terminal with said second electrode.

5. The device of claim 4 wherein said substrate is flexible.

6. The photoelectric conversion device of claim 4 wherein said photoelectric conversion semiconductor layer has a PIN junction.

7. A photovoltaic cell comprising:

an insulating substrate having a front surface and a rear surface;

a first conductive film formed on the front surface of said substrate;

a photoelectric conversion layer formed on said first conductive film;

a first groove formed through said photoelectric conversion layer and said first conductive film in order to electrically divide said first conductive film and said photoelectric conversion layer;

a first insulating strip filling said first groove;

an opening formed through said photoelectric conversion layer and reaching to said first conductive film;

a second conductive film formed on said photoelectric conversion layer and covering said first insulating strip;

a conductive material filled in said opening to connect said first conductive film and said second conductive film;

a second groove formed through said second conductive film in order to electrically divide said second conductive film, said opening being located between said first groove and said second groove;

an output terminal provided on the rear surface of said substrate; and

a conductor connecting said output terminal and said second conductive film,

wherein said conductor is connected to said output terminal through a hole formed through at least said semiconductor layer and said substrate.

8. A photoelectric conversion cell comprising:

an insulating substrate having a front surface and a rear surface;

a first conductive film formed on the front surface of said substrate;

a photoelectric conversion semiconductor layer formed on said first conductive film;

a second conductive film formed on said photoelectric conversion semiconductor layer;

first and second insulators formed through at least said photoelectric conversion layer with a photoelectric conversion element defined therebetween;

an output terminal formed on the rear surface of said substrate; and

a conductive layer formed on the second conductive film and electrically connecting said second conductive film and said output terminal through a hole opened through at least said photoelectric conversion semiconductor layer and said substrate,

wherein the hole of said photoelectric conversion semiconductor layer is located outside said photoelectric conversion element.

9. A photoelectric conversion device according to claim 8 wherein said first electrode is directly formed on said front surface of the substrate.

10. A photoelectric conversion device according to claim 8 wherein said substrate is flexible.

11. A photoelectric conversion device according to claim 8 wherein said photoelectric conversion semiconductor layer comprises silicon.

12. A photoelectric conversion device according to claim 8 wherein said conductive layer extends through said hole.

13. A photoelectric conversion device according to claim 8 wherein said hole is opened through said first and second conductive layers.