Miniaturized filter assembly

• US 5,821,836 A
• Filed: 05/23/1997
• Issued: 10/13/1998
• Est. Priority Date: 05/23/1997
• Status: Expired due to Fees

• Current Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Original Assignee: Board of Regents of the University of Michigan (University of Michigan)
• Inventors: Papapolymerou, Ioannis, Cheng, Jui-Ching, Katehi, Linda P. B.
• Primary Examiner(s): Ham, Seungsook
• Application Number:
  US08/862,722
• Time in Patent Office: 508 Days
• Field of Search: 333/202, 333/207, 333/230, 333/246, 333/247, 257/728
• US Class Current: 333/202
• CPC Class Codes: H01P 1/2088 Integrated in a substrate
• CPC Class Codes: H01P 1/2138 using hollow waveguide filters H01P1/2131 takes precedence
• CPC Class Codes: H01P 7/065 integrated in a substrate

Abstract

A high frequency micromachined filter assembly comprises at least one microresonator having at least one metal-lined resonance chamber and at least two openings. Input means couples an electromagnetic input signal to the resonance chamber through a first one of the openings. The output signal is coupled to output means from the resonance chamber through a second one of the openings. Dielectric material is arranged between the input means and the resonance chamber to maintain the resonator and the input means separated from one another. Dielectric material is arranged between the output means and the resonance chamber to maintain the resonator and the output means separated from one another.

Claims

1. A high frequency microelectronic filter assembly comprising:

a. at least one microresonator comprising at least two openings and at least one metal-lined resonance chamber micromachined in a layer of dielectric material;

b. input means for transmitting an electromagnetic input signal to said resonance chamber through a first one of said openings;

c. output means for receiving an electromagnetic output signal from said resonance chamber through a second one of said openings;

d. a first region of dielectric material arranged between said input means and said resonance chamber, for support of said input means and to maintain said resonance chamber and said input means separated from one another; and

e. a second region of dielectric material arranged between said output means and said resonance chamber, for support of said output means and to maintain said resonance chamber and said output means separated from one another.

2. The filter assembly according to claim 1 having, at least two resonance chambers adjacent one another and openings between selected resonance chambers for coupling said signal between said resonance chambers in a desired path in said microresonator.

3. The filter assembly according to claim 1 having at least two microresonators electrically isolated from one another, each said microresonator coupled to said input means and coupled to separate respective said output means for filtering respective frequencies.

7. The assembly according to claim 1 having said input and output means arranged spaced apart on an outer surface of said filter assembly.

8. The assembly according to claim 7 wherein said at least two openings are spaced apart from one another in a wall of said metal-lined resonance chamber;

said first opening facing said input means for coupling said electromagnetic signal to said resonance chamber from said input means, and said second opening facing said output means for coupling said electromagnetic signal from said resonance chamber to said output means.

9. The assembly according to claim 1 wherein said input and output means are arranged, respectively, on opposite outer surfaces of said filter assembly.

10. The assembly according to claim 9 wherein said metal-lined resonance chamber has first and second opposed walls, said first opening arranged in said first wall facing said input means for coupling said electromagnetic signal to said resonance chamber from said input means, and said second opening in said second wall facing said output means for coupling said electromagnetic signal from said resonance chamber to said output means.

11. The assembly according to claim 1 where said layer of subpart (a) is formed by one or more wafers of said dielectric material, with said cavity micromachined in said one or more wafers.

12. The assembly according to claim 1 comprising said dielectric layer of subpart (a) and a metal layer, said dielectric layer of subpart (a) having first and second major surfaces;

said metal layer arranged at said first major surface with said at least two openings formed in said metal layer, a portion of said metal layer being integral with said metal lining of said chamber, and said metal layer being co-extensive with said first major surface.

13. The assembly according to claim 1 where at least one of said first and second regions is not in said layer of subpart (a).

14. The assembly according to claim 12 wherein said input means is a microstrip line and said metal layer functions as a ground plane layer with respect to said microstrip line.

15. The assembly according to claim 1 wherein said dielectric material is a low loss material having Tan Delta less than 10^-2.

16. The assembly according to claim 1 wherein said dielectric material is selected from the group consisting of Si (Silicon), GaAs (Gallium Arsenide), and InP (Indium Phosphide).

17. The assembly according to claim 1 wherein said input means is a transmission line selected from the group consisting of coplanar waveguide (CPW), finite-ground coplanar (FGC), stripline, and microstrip line.

18. The assembly according to claim 1 characterized by a Q factor greater than 300.

19. The assembly according to claim 1 having an operating frequency in the gigahertz to terahertz range.

25. The assembly according to claim 1 where both of said first and second regions are not in said layer of subpart (a).

4. A high frequency microelectronic filter assembly comprising:

a. at least one microresonator comprising at least two openings and at least one metal-lined resonance chamber micromachined in a layer of dielectric material;

b. input means for transmitting an electromagnetic input signal to said resonance chamber through a first one of said openings;

c. output means for receiving an electromagnetic output signal from said resonance chamber through a second one of said openings;

d. a first region of dielectric material arranged between said input means and said resonance chamber, for support of said input means and to maintain said resonance chamber and said input means separated from one another; and

e. a second region of dielectric material arranged between said output means and said resonance chamber for support of said output means and to maintain said resonance chamber and said output means separated from one another; and

where said at leaset one microresonator comprises two microresonators, said input means is arranged between said microresonators, and said respective output means are arranged on opposite outer surfaces of said assembly.

5. The assembly according to claim 4 further comprising a first ground plane layer arranged between said input means and a first one of said microresonators, and a second ground plane layer arranged between said input means and the second one of said microresonators.

6. The assembly according to claim 5 wherein said first ground plane layer is a metal layer, a portion of which is integral with said metal lining of said first microresonator;

and wherein said second ground plane layer is a metal layer, a portion of which is integral with said metal lining of said second microresonator.

26. The assembly according to claim 4 where at least one of said first and second regions is not in said layer of subpart (a).

27. The assembly according to claim 4 where both of said first and second regions are not in said layer of subpart (a).

20. A high frequency filter assembly comprising:

a. at least one microresonator having at least one metal-lined resonance chamber and at least two openings, said chamber comprising a metal-lined, micromachined cavity formed in a layer of dielectric material;

b. input means for transmitting an electromagnetic input signal to said resonance chamber through a first one of said openings;

c. output means for receiving an electromagnetic output signal from said resonance chamber through a second one of said openings;

d. a first region of dielectric material arranged between said input means and said resonance chamber to maintain said resonance chamber and said input means separated from one another;

e. a second region of dielectric material arranged between said output means and said resonance chamber to maintain said resonance chamber and said output means separated from one another;

where at least one of said first and second regions is not a part of said layer of subpart (a); and

said filter assembly further characterized by an operating frequency in the gigahertz to terahertz range, and a Q factor greater than 300.

21. The assembly according to claim 20 wherein said input means is a transmission line selected from the group consisting of coplanar waveguide (CPW), finite-ground coplanar (FGC), stripline, and microstrip line.

22. The filter assembly according to claim 20 having at least two resonance chambers adjacent one another and openings between selected resonance chambers for coupling said signal between said resonance chambers in a desired path in said microresonator.

23. A high frequency filter assembly comprising:

a. at least one microresonator having at least one metal-lined resonance chamber and at least two openings, said chamber comprising a metal-lined, micromachined cavity formed in a layer of dielectric material;

b. input means for transmitting an electromagnetic input signal to said resonance chamber through a first one of said openings;

c. output means for receiving an electromagnetic output signal from said resonance chamber through a second one of said openings;

d. a first region of dielectric material arranged between said input means and said resonance chamber to maintain said resonance chamber and said input means separated from one another;

e. a second region of dielectric material arranged between said output means and said resonance chamber to maintain said resonance chamber and said output means separated from one another;

where at least one of said first and second regions is not a part of said layer of subpart (a); and

said at least one microresonator comprises a plurality of microresonators electrically isolated from one another, each said microresonator coupled to said input means and coupled to separate respective said output means for filtering respective frequencies;

said filter assembly further characterized by an operating frequency in the gigahertz to terahertz range, and a O factor greater than 300.

24. The filter assembly according to claim 23 which comprises two microresonators, said input means is arranged between said microresonators, and said respective output means are arranged on opposite outer surfaces of said assembly.