Expandable flash-memory mass-storage using shared buddy lines and intermediate flash-bus between device-specific buffers and flash-intelligent DMA controllers

• US 5,822,251 A
• Filed: 09/29/1997
• Issued: 10/13/1998
• Est. Priority Date: 08/25/1997
• Status: Expired due to Term

• Current Assignee: BiTMICRO, LLC (BiTMICRO Networks, Inc.)
• Original Assignee: Bit Microsystems, Inc.
• Inventors: Bruce, Rolando H., Bruce, Ricardo H., Cohen, Earl T.
• Primary Examiner(s): Fears, Terrell W.
• Application Number:
  US08/939,601
• Time in Patent Office: 379 Days
• Field of Search: 365/189.01, 365/230.01, 365/185.33, 365/218
• US Class Current: 365/185.33
• CPC Class Codes: G06F 11/1068 in sector programmable memories, e.g. flash disk G06F11/1072 takes precedence
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 12/0802 Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
• CPC Class Codes: G06F 13/28 using burst mode transfer, e.g. direct memory access DMA, cycle steal G06F13/32 takes precedence
• CPC Class Codes: G06F 2212/1036 Life time enhancement
• CPC Class Codes: G06F 2212/7211 Wear leveling

Abstract

A flash-memory system is expandable. Rather than directly connecting individual flash-memory chips to a controller, flash buffer chips are used. Each flash buffer chip can connect to four banks of flash-memory chips. Chip enables for individual chips in a bank are generated from an address sent to the flash buffer chips. Two flash-specific DMA controllers are provided, each with four DMA state machines for controlling the four banks of flash-memory chips attached to a flash buffer chip. This allows for four-way interleaving. Two flash buses connect the two DMA controllers to flash buffer chips. The flash bus has a narrow byte-wide interface to send command, address, and data bytes from the DMA controller to the flash buffer chips. These command, address, and data bytes are then passed through the flash buffer chip to the flash-memory chips. Two additional command signals on the flash bus are used to select and control the flash buffer chips. Busy signals from all flash-memory chips in a bank are connected together, and the four busy signals from the four banks are time-multiplexed to a single common busy line for the flash bus. The four DMA state machines each monitor one period of the busy line, allowing four flash operations to be monitored at a time, even though only one data transfer can occur across the flash bus.

Claims

1. An expandable flash-memory system comprising:

a host interface for receiving requests for access of flash memory;

a flash-specific direct-memory access (DMA) controller, responsive to the requests from the host interface, for controlling access of the flash memory, the flash-specific DMA controller generating a sequence of command bytes followed by address bytes to initiate a data transfer from the flash memory;

a flash bus, coupled to the flash-specific DMA controller, the flash bus having shared lines, the shared lines for transmitting the sequence of command bytes and address bytes from the flash-specific DMA controller, the shared lines also transmitting data bytes from the flash-specific DMA controller for storage in the flash-memory system;

flash buffer chips, coupled to the flash bus, for generating control signals for controlling flash-memory chips, the flash buffer chips passing the sequence of command bytes and address bytes from the flash-specific DMA controller to the flash memory;

a plurality of flash-memory chips, the flash-memory chips arranged in banks sharing some of the control signals from a flash buffer chip, the flash-memory chips being non-volatile semiconductor-memory chips that retain data when power is no longer applied;

wherein the flash bus accepts additional flash-memory chips attached through the flash buffer chips for expanding a storage capacity of the expandable flash-memory system,

whereby the flash-memory chips are buffered by the flash buffer chips to the flash bus and the flash-specific DMA controller.

2. The expandable flash-memory system of claim 1 wherein the flash bus further comprises command lines, the command lines for indicating transmission of a select code to the flash buffer chips, and

wherein the flash buffer chips each further comprise a select decoder, receiving the select code, for generating a plurality of chip-enable control signals to the flash-memory chips, one of the chip-enable control signals being activated to enable a selected flash-memory chip while other chip-enable control signals disable other flash-memory chips,

whereby the chip-enable control signals are generated by the flash buffer chips from the select code from the flash-specific DMA controller.

3. The expandable flash-memory system of claim 2 wherein each flash-memory chip outputs a busy signal to indicate when a flash operation is in progress within the flash-memory chip;

wherein all busy signals from flash-memory chips in a bank connected to a flash buffer chip are connected to a common bank-busy line, the bank-busy line for each bank input to the flash buffer chip;

the flash buffer chip further comprising;

busy combining means, receiving the bank-busy signals from all banks of flash-memory chips attached to the flash buffer chip, for combining the bank-busy signals into a merged busy signal output to the flash bus,

whereby busy signals from individual flash-memory chips are combined by the flash buffer chips.

4. The expandable flash-memory system of claim 3 wherein the merged busy signals from all flash buffer chips on the flash bus are connected to a common flash-bus busy line,

wherein the flash-specific DMA controller monitors the common flash-bus busy line to determine when the flash operation is in progress in the flash-memory chip,

whereby all busy signals are combined into a single busy line to the flash-specific DMA controller.

5. The expandable flash-memory system of claim 4 wherein the busy combining means in the flash buffer chips comprises:

a multiplexer, receiving the bank-busy lines for all banks attached to the flash buffer chip, for successively outputting a different one of the bank-busy lines as the merged busy signal output to the flash bus;

a counter, coupled to control the multiplexer, for counting in a modulo equal to a number of banks attached to the flash buffer chip,

whereby each of the bank-busy lines is output for a different period of time by the multiplexer.

6. The expandable flash-memory system of claim 5 wherein the flash-specific DMA controller comprises:

DMA state machines for controlling access of a flash-memory chip, the DMA state machine monitoring the flash-bus busy line to determine when the flash operation is still in progress in the flash-memory chip; and

a first-in-first-out memory for storing the data bytes to and from the flash bus;

wherein a number of DMA state machines is equal to a number of banks attached to a flash buffer chip.

7. The expandable flash-memory system of claim 6 further comprising:

a bus state machine, in the flash-specific DMA controller, for generating the sequence of command bytes and address bytes to the flash bus in response to a DMA state machine accessing a flash-memory chip,

whereby one bus state machine drives the flash bus for multiple DMA state machines.

8. The expandable flash-memory system of claim 5 further comprising:

a second flash bus;

a second flash-specific DMA controller coupled to the second flash bus and coupled to the host interface;

a second plurality of flash buffer chips coupled to the second flash bus, each flash buffer chip in the second plurality generating control signals and buffering command and address bytes from the second flash bus to additional banks of flash buffer chips,

whereby the second flash bus accesses the additional banks of flash buffer chips.

9. The expandable flash-memory system of claim 8 further comprising:

expansion sockets, coupled to the flash bus and coupled to the second flash bus, for receiving expansion cards, each expansion card having a first flash buffer chip connected to the flash bus, and a second flash buffer chip connected to the second flash bus, the expansion card having banks of flash-memory chips attached to either the first flash buffer chip or to the second flash buffer chip,

whereby storage capacity is symmetrically expandable by the expansion cards connected to both the flash bus and to the second flash bus.

10. A flash-memory storage peripheral comprising:

a host interface to a host system;

a local processor for controlling the flash-memory storage peripheral;

a read-only memory (ROM), coupled to the local processor, for storing routines for execution by the local processor, the routines including wear-leveling routines for re-mapping data from over-used or faulty memory blocks to under-used or unused memory blocks;

a cache, coupled to the local processor, for temporarily storing data from the host in volatile memory that loses data when power is disconnected;

a first flash-specific DMA controller, coupled to the local processor, for generating command, address, and data sequences to a first flash-memory chip in a format required by the first flash-memory chip;

a first flash bus, coupled to the first flash-specific DMA controller, for transferring data, address, and commands over shared address/data/command lines;

a first flash buffer chip, coupled to the first flash bus, for sending the data, address, and commands from the shared lines of the first flash bus to the first flash-memory chip;

a plurality of other flash-memory chips, arranged into banks, the flash-memory chips being non-volatile semiconductor memory chips that retain data when power is lost;

other flash buffer chips coupled to the first flash bus, each flash buffer chip coupled to a different plurality of banks of the flash-memory chips;

a second flash-specific DMA controller, coupled to the local processor, for generating command, address, and data sequences to a second flash-memory chip in a format required by the second flash-memory chip;

a second flash bus, coupled to the second flash-specific DMA controller, for transferring the data, address, and commands over shared address/data/command lines;

a second flash buffer chip, coupled to the second flash bus, for sending the data, address, and commands from the shared lines of the second flash bus to the second flash-memory chip;

other flash buffer chips coupled to the second flash bus, each flash buffer chip coupled to a different plurality of banks of the flash-memory chips,

whereby two flash-specific DMA controllers control access of flash-memory chips through flash buffer chips connected by two flash buses.

11. The flash-memory storage peripheral of claim 10 wherein the first flash bus further comprises select lines for indicating when an identifier is being sent over the shared address/data/command lines, the identifier selecting one of the flash buffer chips as the first flash buffer chip;

wherein the second flash bus further comprises select lines for indicating when an identifier is being sent over the shared address/data/command lines, the identifier selecting one of the flash buffer chips as the second flash buffer chip,

whereby the select lines select a flash buffer chip for accessing a flash-memory chip.

12. The flash-memory storage peripheral of claim 10 wherein each flash buffer chip includes combining means for combining busy signals from each bank of flash-memory chips attached to the flash buffer chip, the busy signals indicating when a flash operation has completed, each flash buffer chip outputting a single busy signal;

wherein the first flash bus further comprises a flash-bus busy line, coupled to the single busy signal from all flash buffer chips connected to the first flash bus, and wherein the second flash bus further comprises a second flash-bus busy line, coupled to the single busy signal from all flash buffer chips connected to the second flash bus,

whereby busy signals are combined by the flash buffer chips.

13. The flash-memory storage peripheral of claim 12 wherein the combining means combines busy signals by time-division multiplexing.

14. The flash-memory storage peripheral of claim 12 wherein each of the first flash-specific DMA controller and the second flash-specific DMA controller comprises:

DMA state machines for controlling access of a flash-memory chip, the DMA state machine monitoring the flash-bus busy line to determine when the flash operation has completed in the flash-memory chip;

wherein a number of DMA state machines is equal to a number of banks attached to a flash buffer chip.

15. The flash-memory storage peripheral of claim 14 further comprising:

a bus state machine, in each of the first flash-specific DMA controller and the second flash-specific DMA controller, for generating the command and address bytes to the flash bus in response to a DMA state machine accessing a flash-memory chip,

whereby one bus state machine drives the flash bus for multiple DMA state machines.

16. The flash-memory storage peripheral of claim 15 wherein each DMA state machine included disconnect means, responsive to the flash-bus busy line, for releasing the bus state machine and releasing control of the first or second flash bus when the flash operation has not yet completed,

whereby other DMA state machines can use the first or second flash bus to access other flash-memory chips while the flash operation has not yet completed.

17. The flash-memory storage peripheral of claim 16 wherein each DMA state machine can access only one of the banks attached to each flash buffer chip and cannot access other banks attached to each flash buffer chip.

18. A flash storage system comprising:

a flash-specific direct-memory access (DMA) controller having a DMA state machine for each interleave of a flash memory, the flash memory being organized into an interleave number of interleaves for parallel access;

a flash bus having a narrow interface;

a bus state machine for driving command, address, and data bytes onto the flash bus in response to one of the DMA state machines;

banks of flash-memory chips, the flash-memory chips being non-volatile electrically-erasable-programmable read-only-memory EEPROM integrated circuits, the flash-memory chips being organized as pages of at least 512 bytes, and further organized into blocks of at least 16 pages, the flash-memory chips allowing no less than a page to be read or written and no less than a block to be erased; and

flash buffer chips connected to the flash bus, each flash buffer chip connected to a number of banks of the flash-memory chips equal to the interleave number, the flash buffer chips including a decoder for generating a plurality of chip enables for the flash-memory chips connected to the flash buffer chip, the decoder activating one of the chip enables in response to a select code from the DMA state machine;

wherein the flash buffer chips pass the command, address, and data bytes from the flash bus through to the flash-memory chips,

whereby the flash-specific DMA controller controls a large number of the flash-memory chips through the flash bus and the flash buffer chips.

19. The flash storage system of claim 18 wherein a DMA state machine releases the flash bus and the bus state machine while the flash-memory chip is busy performing a flash operation, the DMA state machine later re-acquiring the flash bus and the bus state machine when the flash-memory chip de-activates a busy signal,

whereby the DMA state machines control flash operations in parallel.

20. The flash storage system of claim 19 wherein all busy signals from flash-memory chips in a bank connected to a flash buffer chip are connected to a common bank-busy line, the bank-busy line for each bank input to the flash buffer chip;

the flash buffer chip further comprising;

busy combining means, receiving the bank-busy signals from all banks of flash-memory chips attached to the flash buffer chip, for combining the bank-busy signals into a merged busy signal output to the flash bus,

whereby busy signals from individual flash-memory chips are combined by the flash buffer chips.

21. A flash-memory system comprising:

a host interface for receiving requests for access of flash memory;

a flash-specific direct-memory access (DMA) controller, responsive to the requests from the host interface, for controlling access of the flash memory, the flash-specific DMA controller generating a sequence of command bytes and address bytes to initiate a data transfer from the flash memory;

a flash bus, coupled to the flash-specific DMA controller, the flash bus having shared lines, the shared lines for transmitting the sequence of command bytes and address bytes from the flash-specific DMA controller, the shared lines also transmitting data bytes from the flash-specific DMA controller for storage in the flash-memory system;

a plurality of flash-memory chips, the flash-memory chips arranged in banks sharing one or more control signals, each flash-memory chip outputting a busy signal to indicate when a flash operation is in progress within the flash-memory chip, wherein all of the busy signals from the flash-memory chips in a bank are connected to a common bank-busy line;

wherein the flash-specific DMA controller includes a busy-detector to monitor the common bank-busy line to determine when the flash operation is in progress in the flash-memory chip,

whereby the flash-specific DMA controller provides the sequence of command bytes and address bytes onto the shared lines of the flash bus that also transmit the data bytes, the flash-specific DMA also monitoring progress of the flash operation using the common bank-busy line.

22. The flash-memory system of claim 21 further comprising:

flash buffer chips, coupled to the flash bus, for generating control signals for controlling the flash-memory chips, the flash buffer chips passing the sequence of command bytes and address bytes from the flash-specific DMA controller to the flash memory chips;

wherein the flash bus accepts additional flash-memory chips attached through the flash buffer chips for expanding a storage capacity of the expandable flash-memory system,

whereby the flash-memory system is an expandable flash-memory system.

23. The flash-memory system of claim 21 wherein the flash buffer chips further comprise:

busy combining means, receiving the common bank-busy signals from a plurality of banks of flash-memory chips, for combining the bank-busy signals into a merged busy bus, the merged busy bus coupled to the flash-specific DMA controller,

and wherein the flash-specific DMA controller further comprises;

DMA state machines for controlling access of a selected flash-memory chip in the plurality of flash-memory chips, the DMA state machine monitoring the merged busy bus to determine when the flash operation is still in progress in the selected flash-memory chip; and

a first-in-first-out memory for storing the data bytes to and from the flash bus;

wherein a number of DMA state machines is equal to a number of banks of flash-memory chips.

24. The expandable flash-memory system of claim 23 further comprising:

a bus state machine, in the flash-specific DMA controller, for generating the sequence of command bytes and address bytes to the flash bus in response to a DMA state machine accessing the selected flash-memory chip,

whereby the bus state machine drives the flash bus for multiple DMA state machines.