Micromachined capillary electrophoresis device

• US 5,824,204 A
• Filed: 06/27/1996
• Issued: 10/20/1998
• Est. Priority Date: 06/27/1996
• Status: Expired due to Fees

• Current Assignee: IC Sensors, Inc. (TE Connectivity Ltd. (United Kingdom))
• Original Assignee: IC Sensors, Inc. (TE Connectivity Ltd. (United Kingdom))
• Inventors: Jerman, John H.
• Primary Examiner(s): Gorgos, Kathryn L.
• Assistant Examiner(s): NOGUEROLA, ALEXANDER STEPHAN
• Application Number:
  US08/671,428
• Time in Patent Office: 845 Days
• Field of Search: 216/2, 216/33, 216/39, 216/51, 216/56, 422/50, 422/99, 422/100, 422/236, 137/563, 204/451, 204/601, 347/20
• US Class Current: 204/601
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81B 2203/0338 Channels
• CPC Class Codes: B81B 2203/0353 Holes
• CPC Class Codes: B81C 1/00119 Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/031 Anodic bondings
• CPC Class Codes: G01N 27/44791 Microapparatus sample containers with integrated microfluidic structures B01L3/5027

Abstract

A micromachined structure for handling fluids with an applied high voltage, i.e. for electrophoresis, includes a glass or other highly insulative substrate on which are formed very small diameter capillary channels of e.g. silicon nitride. Due to the absence of a silicon substrate, this structure is highly electrically insulative. The silicon nitride channels are formed by a micro-machining and etch process, so that they are initially defined in an etched sacrificial silicon wafer by conformal coating of etched features in the silicon wafer with a silicon nitride layer, which is then patterned to define the desired channels. The silicon wafer is bonded to the glass substrate and the bulk of the silicon wafer is sacrificially etched away, leaving the desired silicon nitride channels with supporting silicon mesas. The remaining silicon nitride "shell" is bonded to the glass substrate and substantially duplicates the etched features in the original silicon wafer. The capillary channels are of a material such as low stress silicon nitride and there is no electrical shorting path to the highly insulative glass substrate.

Claims

1. A fluid handling structure comprising:

a planar substrate of a first dielectric material and having a principal surface;

a plurality of channel structures formed on the principal surface, each channel structure extending from the principal surface and being of a second differing dielectric material, and defining a fluid-carrying channel between the channel structure and the principal surface; and

a layer of polymer overlying and in contact with each of the channel structures.

2. The structure of claim 1, wherein the first dielectric material is selected from the group consisting of PYREX, fused silica, and plastic.

3. The structure of claim 1, wherein the second dielectric material is selected from the group consisting of silicon oxynitride, silicon nitride, aluminum oxide, silicon dioxide, titanium nitride, titanium oxide, silicon carbide, diamond, and polyamide.

4. The structure of claim 1, wherein each of the channel structures has a wall thickness of less than 5 μ

m.

5. The structure of claim 1, wherein at least one of the channel structures includes an internal support post extending vertically in the channel from the principal surface to a roof of the channel structure.

6. The structure of claim 1, further comprising an anodic bond attaching each channel structure to the principal surface.

7. The structure of claim 1, wherein each of the channels is less than 500 μ

m wide and 100 μ

m in height.

8. The structure of claim 1, further comprising at least one through-hole defined in the substrate and communicating with one of the channels.

9. The structure of claim 8, further comprising an electrode on a backside surface of the planar substrate and extending into the through-hole.

10. The structure of claim 1, further comprising a mesa of a third material formed on the principal surface of the substrate and extending over at least part of an outer surface of one of the channel structures.

11. The structure of claim 10, further comprising a resistive heating trace formed on an outer surface of the mesa.

12. The structure of claim 1, further comprising a layer of a dielectric material on the principal surface of the substrate and extending over at least part of an outer surface of at least one of the channel structures.

13. The structure of claim 1, further comprising at least two electrodes on an backside surface of the planar substrate.

14. A fluid handling structure comprising:

a planar substrate of a first dielectric material and having a principal surface; and

a plurality of channel structures formed on the principal surface, each channel structure extending from the principal surface and being of a second differing dielectric material, and defining a fluid-carrying channel between the channel structure and the principal surface;

wherein at least one of the channel structures includes an internal support post extending vertically in the channel from the principal surface to a roof of the channel structure.

15. A fluid handling structure comprising:

a planar substrate of a first dielectric material and having a principal surface;

a plurality of channel structures formed on the principal surface, each channel structure extending from the principal surface and being of a second differing dielectric material, and defining a fluid-carrying channel between the channel structure and the principal surface;

at least one through-hole defined in the substrate and communicating with one of the channels; and

an electrode on a backside surface of the planar substrate and extending into the through-hole.

16. A fluid handling structure comprising:

a planar substrate of a first dielectric material and having a principal surface;

a plurality of channel structures formed on the principal surface, each channel structure extending from the principal surface and being of a second differing dielectric material, and defining a fluid-carrying channel between the channel structure and the principal surface;

wherein the second dielectric material is selected from the group consisting of silicon oxynitride, silicon nitride, aluminum oxide, titanium nitride, titanium oxide, silicon carbide, diamond, and polyamide.