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Semiconductor material, a semiconductor device using the same, and a manufacturing method thereof

  • US 5,824,574 A
  • Filed: 03/18/1996
  • Issued: 10/20/1998
  • Est. Priority Date: 03/17/1995
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor, comprising:

  • forming a first semiconductor film on a substrate having an insulating surface;

    applying a first energy to said first semiconductor film to crystallize said first semiconductor film;

    patterning said first semiconductor film to form a region as a seed crystal;

    etching said seed crystal to selectively leave a crystal face in an upper face of said seed crystal;

    forming a second semiconductor film to cover said upper face of seed crystal; and

    applying a second energy to said second semiconductor film to conduct a crystal growth starting from said seed crystal in said second semiconductor film, to form a single crystal or a substantially single crystal with said crystal face in an upper face of said second semiconductor film.

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