Bolometric detection device for millimeter and sub-millimeter waves and a method for manufacturing this device

• US 5,825,029 A
• Filed: 06/11/1996
• Issued: 10/20/1998
• Est. Priority Date: 06/15/1995
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Sajer, Jean-Michel, Agnese, Patrick
• Primary Examiner(s): Glick, Edward J.
• Application Number:
  US08/660,598
• Time in Patent Office: 861 Days
• Field of Search: 250/336.1, 250/338.1, 250/338.4, 250/349, 250/394
• US Class Current: 250/338.1
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

A bolometric detection device for millimeter or sub-millimeter waves and a method for manufacturing this device. According to the invention, at least one bolometer (8) is formed on a support (6) which is transparent to the waves to be detected, each bolometer including a reflecting resonant cavity (10), a grid (12) thermally insulated from the support and positioned above the cavity, regular conductor patterns (14) which are formed on the grid and whose electrical impedance is matched to that of the void, and a thermometer (16) integral with the grid.

Claims

1. A bolometric detection device for millimeter or sub-millimeter waves, the device including at least one bolometer formed on a support transparent to the waves to be detected, the device being characterized in that each bolometer includes:

a reflecting resonant cavity,

a grid thermally insulated from the support and positioned above the cavity,

an assembly of periodic patterns of electrical conductors which are formed on the grid and whose electrical impedance is matched to that of vacuum, and

a main thermometer integral with the grid.

2. A device according to claim 1, characterized in that the patterns are electrically connected to each other.

3. A device according to claim 1, characterized in that the patterns are electrically insulated from each other.

4. A device according to claim 3, characterized in that a size of the patterns is of the order of half the mean wavelength of the waves to be detected.

5. A device according to claim 1, characterized in that a period of the grid is of the order of half the mean wavelength of the waves to be detected.

6. A device according to claim 1, characterized in that each bolometer includes, in addition, an auxiliary thermometer associated with the main thermometer for the purpose of making differential temperature measurements.

7. A device according to claim 1, characterized in that it includes, in addition, an electronic circuit for reading signals supplied by each bolometer.

8. A device according to claim 1, characterized in that each bolometer is associated with a concentrator cone.

9. A device according to claim 1, characterized in that it includes a matrix of M×

N bolometers, M and N being whole numbers at least equal to 1.

10. A method of manufacturing the detection device according to claim 1, characterized in that it includes the following steps:

forming the main thermometer and the bolometer conductor patterns on a silicon/silica/silicon substrate,

forming the grid of the bolometer on this substrate,

removing the silica from the substrate under this grid, and

forming the reflecting resonant cavity under the grid.

11. A method according to claim 10, characterized in that, to form the cavity,

the silicon is removed from the substrate, under the grid, from the back face of the substrate, allowing a layer of silicon to remain, the thickness of which corresponds to resonance of said cavity, and

a reflecting layer is formed on this silicon layer on a side of the back face of the substrate.

12. A method according to claim 10, characterized in that, to form the cavity,

the silicon is removed from the substrate, under the grid, from the front face of this substrate, and to a depth corresponding to resonance of said cavity, and

a reflecting layer is formed facing the grid, in the bottom of the cavity thus obtained by the removal of silicon.