Channel-type stack capacitor for DRAM cell

• US 5,825,061 A
• Filed: 12/06/1995
• Issued: 10/20/1998
• Est. Priority Date: 12/06/1995
• Status: Expired due to Term

• Current Assignee: Transpacific Infrared, LLC (Intellectual Ventures LLC)
• Original Assignee: Utron Technology Incorporated
• Inventors: Chang, Su-Jaw
• Primary Examiner(s): Ngo , Ngan V.
• Application Number:
  US08/568,245
• Time in Patent Office: 1,049 Days
• Field of Search: 257/296, 257/306, 257/307, 257/308, 257/309
• US Class Current: 257/309
• CPC Class Codes: H10B 12/318 the storage electrode having multiple segments

Abstract

The electrode of a storage capacitor of a DRAM cell lies diagonally along the memory cell. The diagonal layout makes the length of the capacitor longer than either the x-dimension or the y-dimension of the memory cell, thus increasing the storage capacitance.

Claims

1. A storage capacitance for dynamic random access memory (DRAM) celL having a word line connected to a gate electrode of a MOSFET, a bit line serving as a first diffusion of said MOSFET, a first electrode of said capacitor connected to a reference potential, comprising:

a second electrode of said capacitor connected to a second diffusion of said MOSFET, separated from said first electrode by a dielectric layer, and having a cross-section in the form of at least one shell enclosing a core of a material which can be different from the material for said second electrode,

said core traversing from one said memory cell to another said memory in a direction other than the horizontal and vertical dimensions of a rectangular shaped said memory cell.

2. A storage capacitor for a DRAM cell as described in claim 1, wherein said core traverses diagonally from one said memory cell to another said memory cell.

3. A storage capacitor for a DRAM cell as described in claim 1, wherein the material for said first electrode and said second electrode is polysilicon.

4. A storage capacitor for a DRAM cell as described in claim 1, wherein said core is filled with dielectric material.

5. A storage capacitor for a DRAM cell as described in claim 1, wherein said core is partially filled with dielectric material.

6. A storage capacitor for a DRAM cell as described in claim 1, wherein said core is hollow.

7. A storage capacitor for a DRAM cell as described in claim 1, wherein said core is partially filled with said first electrode.

8. A storage capacitor for a DRAM cell as described in claim 1, wherein one said shell is stacked with another said shell.

9. A storage capacitor for a DRAM cell as described in claim 8, wherein the material of said core of one of said shell is the same as the material of said core of another said shell.

10. A storage capacitor for a DRAM cell as described in claim 8 wherein the direction of said core of one of said shell is different from the direction of the core of another said shell.

11. A storage capacitor for a DRAM cell as described in claim 8, wherein the area of said core of one said shell is different from the area of the core of another said shell.

12. A storage capacitor for a DRAM cell as described in claim 1, wherein an insulating spacer is placed around said shell.