Semiconductor integrated circuit device

• US 5,825,193 A
• Filed: 12/18/1995
• Issued: 10/20/1998
• Est. Priority Date: 12/19/1994
• Status: Expired due to Term

• Current Assignee: Godo Kaisha IP Bridge 1 (IP Bridge, Inc.)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Hashimoto, Shin, Miyanaga, Isao, Nakata, Yoshiro
• Primary Examiner(s): Nguyen, Vinh P.
• Application Number:
  US08/575,735
• Time in Patent Office: 1,037 Days
• Field of Search: 324/158.1, 324/73.1, 324/765, 324/760, 324/763, 437/8, 371/15.1, 371/22.3, 371/22.6, 327/546, 327/525, 327/538, 327/543, 438/14, 438/17
• US Class Current: 324/750.05
• CPC Class Codes: G01R 31/2849 Environmental or reliability testing, e.g. burn-in or validation tests of individual semiconductors G01R31/2642; of printed circuits boards G01R31/2817; of IC's G01R31/2855
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence

Abstract

A semiconductor integrated circuit apparatus having a plurality of semiconductor integrated circuit devices, each of the plurality of semiconductor devices including a semiconductor integrated circuit formed on a semiconductor substrate, a reference voltage input terminal formed on the semiconductor substrate which is operative for receiving a reference voltage input from outside of the semiconductor substrate, and a burn-in voltage control circuit formed on the semiconductor substrate operative for receiving the reference voltage which is output from the reference voltage input terminal. The burn-in voltage control circuit generates a burn-in supply voltage which is input to the semiconductor integrated circuit, and also maintains the burn-in supply voltage at the reference voltage level such that each of the integrated circuits receives a burn-in supply voltage having the same voltage level.

Claims

1. A semiconductor integrated circuit device comprising:

a semiconductor integrated circuit formed on a semiconductor substrate;

a reference-voltage input terminal formed on said semiconductor substrate, said reference-voltage input terminal operative for receiving a reference voltage input from outside of said semiconductor substrate;

a burn-in voltage control circuit formed on said semiconductor substrate, said burn-in voltage control circuit operative for receiving said reference voltage which is output from said reference-voltage input terminal, said burn-in voltage control circuit generating a burn-in supply voltage which is input to said semiconductor integrated circuit, said burn-in voltage control circuit maintaining said burn-in supply voltage at said reference voltage level.

2. A semiconductor integrated circuit device according to claim 1,

wherein said burn-in voltage control circuit comprises a current restriction circuit for reducing, when an electric current in excess of a given value flows through said semiconductor integrated circuit, a voltage supplied by said burn-in voltage control circuit to said semiconductor integrated circuit so as to control the amount of electric current that flows through said semiconductor integrated circuit.

3. A semiconductor integrated circuit apparatus having a plurality of semiconductor integrated circuit devices, each of said plurality of semiconductor integrated circuit devices comprising:

a semiconductor integrated circuit formed on a semiconductor substrate,

a reference-voltage input terminal formed on said semiconductor substrate, said reference-voltage input terminal operative for receiving a reference voltage input from outside of said semiconductor substrate;

a burn-in voltage control circuit formed on said semiconductor substrate, said burn-in voltage control circuit operative for receiving said reference voltage which is output from said reference-voltage input terminal, said burn-in voltage control circuit generating a burn-in supply voltage which is input to said semiconductor integrated circuit, said burn-in voltage control circuit maintaining said burn-in supply voltage at said reference voltage level, wherein each of said integrated circuits receive said burn-in supply voltage having the same voltage level.

4. A semiconductor integrated circuit apparatus according to claim 3, wherein each of said burn-in voltage control circuits comprises a current restriction circuit for reducing, when an electric current in excess of a given value flows through said semiconductor integrated circuit, a voltage supplied by said burn-in voltage control circuit to said semiconductor integrated circuit so as to control the amount of electric current that flows through said semiconductor integrated circuit.