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Extended wavelength strained layer lasers having strain compensated layers

  • US 5,825,796 A
  • Filed: 09/25/1996
  • Issued: 10/20/1998
  • Est. Priority Date: 09/25/1996
  • Status: Expired due to Term
First Claim
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1. A light emitting device having at least a substrate and an active region, said light emitting device comprising:

  • said substrate having a substrate lattice constant between 5.63 Å and

    5.67 Å

    ;

    a first strained layer having a lattice constant smaller than said substrate lattice constant and being disposed between said substrate and said active region;

    said active region comprising one pseudomorphic light emitting active layer disposed above said substrate, said active layer comprising In, Ga and As, said active layer comprises at least two strained layers, and a third layer disposed between said two strained layers, said active layer having a thickness equal to or less than 80 Å

    ; and

    wherein said light emitting device has an emission wavelength of at least 1.3 μ

    m.

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