System for finding the orientation of a wafer

• US 5,825,913 A
• Filed: 07/18/1995
• Issued: 10/20/1998
• Est. Priority Date: 07/18/1995
• Status: Expired due to Term

• Current Assignee: Cognex Corporation
• Original Assignee: Cognex Corporation
• Inventors: Wilson, David J., Clark, James Harald, Michael, David J., Rostami, Fariborz
• Primary Examiner(s): Kelley, Christopher S.
• Application Number:
  US08/503,574
• Time in Patent Office: 1,190 Days
• Field of Search: 382/141, 382/145, 382/151, 382/203, 382/204, 382/209, 382/212, 382/216, 382/217, 382/276, 382/281, 382/283, 382/287, 382/288, 382/291, 348/87, 348/126, 348/129, 348/130, 348/135, 358/453, 358/464, 364/474.01, 364/474.28, 364/474.29, 364/474.34-474.36, 364/470, 364/491, 364/520, 437/8, 250/202, 250/307, 250/557
• US Class Current: 382/151
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/73 using feature-based methods
• CPC Class Codes: H01L 2223/54453 for use prior to dicing

Abstract

The invention can be used to find the orientation of a semiconductor wafer without wafer handling, i.e., in a non-contact manner. The invention uses knowledge of the position of a semiconductor wafer, and the position of an orientation feature of the wafer, to find the orientation of the wafer. According to the invention, a curved band image is formed that includes an image of an orientation feature. The curved band image is then transformed into a straight band image. The longitudinal position of the orientation feature is then determined in the coordinate system of the straight band image, which longitudinal position is then converted into an angular displacement in the coordinate system of the curved band image to provide the orientation of the wafer.

Claims

1. Apparatus for determining the orientation of a semiconductor wafer having an orientation feature, a center point, a perimeter, and a principal radius extending from the center point to the perimeter, the apparatus comprising:

means for acquiring an image of at least a portion of said wafer including an image of at least a portion of said orientation feature;

means for acquiring knowledge of the position of said center point, and of the radial distance of a point on said orientation feature from said center point;

means for using said knowledge to define a curved image-partitioning band having a curved inner boundary, a curved outer boundary, and a curved angular displacement scale, such that said image of at least a portion of said orientation feature is disposed between said inner and outer boundaries to provide a curved band image;

polar-to-cartesian coordinate conversion means for transforming said curved band into a straight band image including a longitudinal position scale;

means for determining knowledge of the longitudinal position along said longitudinal position scale of said image of at least a portion of said orientation feature; and

means for converting said knowledge of said longitudinal position into knowledge of the corresponding angular displacement along said curved angular displacement scale, so as to provide knowledge of the orientation of said semiconductor wafer.

2. The apparatus of claim 1, wherein said image of at least a portion of said wafer includes at least a portion of said perimeter, said apparatus further comprising:

means for acquiring knowledge of the position of a plurality of points along at least said portion of said perimeter;

means for determining a curve of best fit to said plurality of points; and

means for determining a focal point of said curve of best fit.

3. The apparatus of claim 2, wherein said curve of best fit is a circle, and said focal point of said curve of best fit is the center point of said circle, said apparatus further comprising:

means for determining a radius of said circle.

4. The apparatus of claim 1, wherein said curved inner boundary includes an arc of a circle of a first radius, said curved outer boundary includes an arc of a circle of a second radius that is of greater length than said first radius, and said curved angular displacement scale is a polar coordinate system.

5. The apparatus of claim 1 wherein said means for acquiring an image includes a CCD camera.

6. The apparatus of claim 1, wherein said means for acquiring an image includes a laser cooperative with at least one photodetector.

7. The apparatus of claim 1 wherein said means for acquiring knowledge of the position of said center point includes a wafer handler.

8. The apparatus of claim 1 wherein said means for acquiring knowledge of the position of said center point uses said image of at least a portion of said wafer.

9. The apparatus of claim 1 wherein at least a portion of said perimeter of said semiconductor wafer is disposed between said inner and outer boundaries.

10. The apparatus of claim 1, wherein said orientation feature includes a wafer notch.

11. The apparatus of claim 1, wherein said orientation feature includes a wafer flat.

12. The apparatus of claim 1, wherein said orientation feature includes a fiducial mark.

13. The apparatus of claim 1 wherein said means for determining knowledge of the longitudinal position along said longitudinal position scale includes an edge detector.

14. The apparatus of claim 13, wherein said edge detector is a caliper vision tool.

15. The apparatus of claim 1 wherein said means for determining knowledge of the longitudinal position along said longitudinal position scale includes a feature finder.

16. The apparatus of claim 15, wherein said feature finder includes means for template matching.

17. The apparatus of claim 16, wherein said feature finder includes means for General Hough Transform template matching.

18. The apparatus of claim 15, wherein said feature finder includes means for normalized correlation search.

19. The apparatus of claim 15, wherein said feature finder includes means for blob analysis.

20. The apparatus of claim 2, wherein said means for acquiring knowledge of the position of a plurality of points along at least said portion of said perimeter includes an edge detector.

21. The apparatus of claim 20, where said edge detector includes a caliper vision tool.

22. The apparatus of claim 1 wherein said means for acquiring an image of at least a portion of said wafer includes means for acquiring an image of said wafer along an axis that is perpendicular to a surface of said wafer.

23. The apparatus of claim 1 wherein said means for acquiring an image of at least a portion of said wafer includes means for transforming an image acquired along an axis that is not perpendicular to a surface of said semiconductor wafer into an image that is substantially equivalent to an image acquired along an axis that is perpendicular to said surface.

24. Apparatus for determining the orientation of a semiconductor wafer having an orientation feature, a center point, a perimeter, and a principal radius extending from the center point to the perimeter, the apparatus comprising:

means for acquiring an image of at least a portion of said wafer including an image of at least a portion of said perimeter, and at least a portion of said orientation feature;

means for acquiring knowledge of the position of said center point, and of the radial distance of a point on said perimeter from said center point;

means for using said knowledge to define an outer circular boundary in substantially concentric relationship with said perimeter, said outer circular boundary having a radius greater than a radial distance of a point on said perimeter;

means for using said knowledge to define an inner circular boundary in substantially concentric relationship with said outer circular boundary, said inner circular boundary having a radius less than said radial distance of said point on said perimeter;

means for using said knowledge to define a circular angular displacement scale;

polar-to-cartesian coordinate conversion means for transforming a circular band image that is bounded by said inner and outer boundaries;

into a straight band image, said circular band image including an image of at least a portion of said perimeter, an image of at least a portion of said orientation feature, and a longitudinal position scale;

means for determining knowledge of the longitudinal position along said longitudinal position scale of said image of at least a portion of said orientation feature; and

means for converting said knowledge of said longitudinal position into knowledge of the corresponding angular displacement along said curved angular displacement scale, so as to provide knowledge of the orientation of said semiconductor wafer.

25. A method for determining the orientation of a semiconductor wafer having an orientation feature, a center point, a perimeter, and a principal radius extending from the center point to the perimeter, the method comprising the steps of:

acquiring an image of at least a portion of said wafer including an image of at least a portion of said orientation feature;

acquiring knowledge of the position of said center point, and of the radical distance of a point on said orientation feature from said center point;

using said knowledge to define a curved image-partitioning band having a curved inner boundary, a curved outer boundary, and a curved angular displacement scale, such that said image of at least a portion of said orientation feature is disposed between said inner and outer boundaries to provide a curved band image;

transforming said curved band image into a straight band image, including a longitudinal position scale, using a polar-to-cartesian coordinate transform;

determining knowledge of the longitudinal position along said longitudinal position scale of said image of at least a portion of said orientation feature; and

converting said knowledge of said longitudinal position into knowledge of the corresponding angular displacement along said curved angular displacement scale, so as to provide knowledge of the orientation of said semiconductor wafer.

26. The method of claim 25, wherein said image of at least a portion of said wafer includes at least a portion of said perimeter, said method further comprising the steps of:

acquiring knowledge of the position of a plurality of points along at least said portion of said perimeter;

determining a curve of best fit to said plurality of points; and

determining a focal point of said curve of best fit.

27. The method of claim 25, wherein said curve of best fit is a circle, and said focal point of said curve of best fit is the center point of said circle, said method further comprising the steps of:

determining a radius of said circle.

28. The method of claim 25, wherein said curved inner boundary includes an arc of a circle of a first radius, said curved outer boundary includes an arc of a circle of a second radius that is of greater length than said first radius, and said curved angular displacement scale is a polar coordinate system.

29. The method of claim 25 wherein said step of acquiring an image of at least a portion of said wafer includes the step of acquiring an image of said wafer along an axis that is perpendicular to a surface of said wafer.

30. The method of claim 25, wherein said step of acquiring knowledge of the position of said center point, and of the radial distance of a point on said orientation feature from said center point, includes the steps of:

locating a plurality of edge points of the perimeter of the image of the wafer;

finding a circle equation of best fit to said plurality of edge points;

determining the distance of each point from said circle of best fit;

determining whether each of said plurality of edge points is within a threshold distance from said circle of best fit, and returning an equation of said circle of best fit only if each of said plurality of edge points is within said threshold distance;

considering all original edge points, discarding each edge point that is disposed more than said threshold distance from said circle of best fit; and

determining a next circle of best fit using only a plurality of edge points that were not discarded.

31. The method of claim 30, wherein the step of finding a circle equation of best fit to said plurality of edge points includes the steps of:

measuring the diameter of the wafer; and

using said diameter to determine said circle equation of best fit.