Methods and apparatus for sputtering with rotating magnet sputter sources
First Claim
1. A magnetron sputtering source for forming a sputtered film on a substrate in a magnetron sputtering apparatus, comprising:
- a target having a surface from which material is sputtered; and
a magnet assembly consisting of an array of single magnet bars that is rotatable about an axis of rotation with respect to said target, said magnet assembly producing on said target an erosion profile that approximates a solution to an equation of the form ##EQU9## where e(r'"'"') is the erosion profile, t(r) is a desired radial thickness distribution of the sputtered film, K(r,r'"'"') is a function depending on the sputter geometry and process conditions, r is the radial position on the substrate, r'"'"' is the radial position on the target, and a and b are the radial limits of erosion on the target.
1 Assignment
0 Petitions
Accused Products
Abstract
A magnetron sputtering source for forming a sputtered film on a substrate in a magnetron sputtering apparatus includes a target having a surface from which material is sputtered and a magnet assembly that is rotatable about an axis of rotation with respect to the target. The magnet assembly produces on the target an erosion profile that is calculated to yield a desired depositional thickness distribution and inventory. A method for configuring the rotatable magnet assembly includes the steps of determining an optimal erosion profile that yields the desired depositional thickness distribution and inventory, determining a plasma track on the surface of the target that produces an acceptable approximation to the optimal erosion profile, and determining a magnet structure that produces the plasma track.
-
Citations
17 Claims
-
1. A magnetron sputtering source for forming a sputtered film on a substrate in a magnetron sputtering apparatus, comprising:
-
a target having a surface from which material is sputtered; and a magnet assembly consisting of an array of single magnet bars that is rotatable about an axis of rotation with respect to said target, said magnet assembly producing on said target an erosion profile that approximates a solution to an equation of the form ##EQU9## where e(r'"'"') is the erosion profile, t(r) is a desired radial thickness distribution of the sputtered film, K(r,r'"'"') is a function depending on the sputter geometry and process conditions, r is the radial position on the substrate, r'"'"' is the radial position on the target, and a and b are the radial limits of erosion on the target. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A method for configuring a rotatable magnet assembly for use in a magnetron sputtering apparatus including a target having a surface from which material is sputtered to form a sputtered film on a substrate, comprising the steps of:
-
determining an erosion profile on said target that approximates a solution to an equation of the form ##EQU10## where e(r'"'"') is the erosion profile, t(r) is a desired radial thickness distribution of the sputtered film, K(r,r'"'"') is a function depending on the sputter geometry and process conditions, r is the radial position on the substrate, r'"'"' is the radial position on the target, and a and b are the radial limits of erosion on the target; and determining a magnet structure for said rotatable magnet assembly that produces an acceptable approximation to the erosion profile e(r'"'"'). - View Dependent Claims (10, 11, 12, 13, 14)
-
-
15. A magnetron sputtering apparatus comprising:
-
a first magnetron sputtering source for forming a sputtered film on a first surface of a substrate, said first magnetron sputtering source including a first target having a surface from which material is sputtered and a first magnet assembly consisting of an array of single magnet bars that is rotatable about an axis of rotation with respect to said first target, said magnet assembly producing on said target an erosion profile that approximates a solution to an equation of the form ##EQU11## where e(r'"'"') is the erosion profile, t(r) is a desired radial thickness distribution of the sputtered film, K(r,r'"'"') is a function depending on the sputter geometry and process conditions, r is the radial position on the substrate, r'"'"' is the radial position on the target, and a and b are the radial limits of erosion on the target; a second magnetron sputtering source for forming a sputtered film on a second surface of said substrate, said second magnetron sputtering source including a second target having a surface from which material is sputtered and a second magnet assembly consisting of an array of single magnet bars that is rotatable about an axis of rotation with respect to said second target, said magnet assembly producing on said target an erosion profile that approximates a solution to an equation of the form ##EQU12## where e(r'"'"') is the erosion profile, t(r) is a desired radial thickness distribution of the sputtered film, K(r,r'"'"') is a function depending on the sputter geometry and process conditions, r is the radial position on the substrate, r'"'"' is the radial position on the target, and a and b are the radial limits of erosion on the target, said first and second magnet assemblies producing on the surfaces of said first and second targets plasma tracks, each having a shape characterized by a pair of symmetrical lobes, a deeply indented first inward cusp located near the axis of rotation and a moderately indented second inward cusp, said first and second cusps being located on opposite sides of said plasma track, each of said lobes having a relatively long section of substantially constant radius with respect to the axis of rotation; and a vacuum system for producing a vacuum in regions between each target surface and the substrate. - View Dependent Claims (16, 17)
-
Specification